Described are methods, devices, and systems useful for adsorbing organometallic vapor onto solid adsorbent material to remove the organometallic vapor from a gas mixture that contains the organometallic vapor and other vapor, particulate materials, or both.

Implementations of the present disclosure relate to methods and systems for abating F-gases present in the effluent of semiconductor manufacturing processes. In one implementation, a method for abating effluent exiting a processing chamber is provided. The method begins by flowing an effluent from a processing chamber into a plasma source, wherein the effluent comprises one or more F-gases. The method further includes delivering at least one abating reagent to the plasma source, the abating reagent comprising at least one of water vapor and oxygen-containing gas, at operation. The method further includes activating the effluent and the abating reagent in the presence of a plasma to convert the one or more F-gases in the effluent and the abating reagent to an abated material.

A gas chamber supply system includes a gas source configured to fluidly connect to a gas chamber and to supply a gas mixture to the gas chamber, the gas source including: a pre-prepared gas supply including a gas mixture, the gas mixture including a plurality of gas components and lacking a halogen; a recycled gas supply including the gas mixture; and a fluid flow switch connected to the pre-prepared gas supply and to the recycled gas supply. The gas chamber supply also includes a control system configured to: determine if the relative concentration between the gas components within the recycled gas supply is within an acceptable range; and provide a signal to the fluid flow switch to thereby select one of the pre-prepared gas supply and the recycled gas supply to as the gas source based on the determination.

The invention provides a device and system for decomposing and oxidizing of gaseous pollutants. A novel reaction portion reduces particle formation in fluids during treatment, thereby improving the defect of particle accumulation in a reaction portion. Also, the system includes the device, wherein a modular design enables the system to have the advantage of easy repair and maintenance.

Disclosed is a substrate processing apparatus and the method of processing an exhaust gas. The substrate processing apparatus and the method of processing an exhaust gas according to the present invention, an exhaust gas decomposition module may decompose a source gas exhausted from a process chamber to decompose a ligand of the source gas. Also, the ligand and the source gas of which the ligand has been decomposed may be put in a stabilized state by reacting with separately supplied O.sub.2, N.sub.2O, or O.sub.3, and then, may be changed to a mixed gas including a reactant gas mixed therewith. Subsequently, the mixed gas may flow into the exhaust pump and may be emitted. Alternatively, the ligand and the source gas may be mixed with the reactant gas and may be emitted. Therefore, the ligand and the source gas of which the ligand has been decomposed may not react with the reactant gas or heat which occurs in the exhaust pump, and thus, the ligand-decomposed source gas and the ligand flowing into the exhaust pump are not deposited on an inner surface of the exhaust pump. Also, the ligand-decomposed source gas and ligands piled in the exhaust pump are not exploded.

Adsorbent materials are disclosed, along with filter elements containing the adsorbent materials methods of using adsorbents to remove siloxane contaminants from a gas stream. The method includes providing an adsorbent material that has been washed with an acid and passing a gas through the adsorbent material so as to reduce siloxane levels in the gas. A filter element for reducing siloxane levels in a gas includes a first adsorbent material, the first adsorbent material comprising an acid-washed adsorbent; and a second adsorbent material, the second adsorbent material comprising an acid-impregnated adsorbent.

The present disclosure generally relates to systems and methods for the combustive abatement of waste gas formed during the manufacture of semiconductor wafers. In particular, the systems described herein are capable of combusting air-polluting perfluorocarbons, including those having high greenhouse gas indexes such as hexafluoroethane (C.sub.2F.sub.6) and tetrafluoromethane (CF.sub.4), as well as particulate-forming silicon dioxide precursors, such as silane (SiH.sub.4) and tetraethoxysilane (Si(OC.sub.2H.sub.5).sub.4, abbreviated TEOS), with greater efficiency and lower energy usage than prior abatement systems. More particularly, and in one preferred embodiment, the present disclosure is directed to a waste gas abatement system that utilizes a combination of non-combustible and combustible gases (or gas mixtures) for thermal combustion, which are directed through multiple permeable interior surfaces of a reaction chamber, efficiently combusting waste gas and preventing undesirable accumulation of solid particulate matter on the chamber surfaces.

High-purity gas purifiers for purification of corrosive gases, such as halogen gases or halide gases, and noncorrosive gases, such as hydrogen and inert gases, methods of making and methods of using the gas purifiers, are described. The gas purifier includes a housing made of nickel or stainless steel. Within the housing, the gas purifier includes a purifier resin, including a modifi-er coated onto a substrate. The gas purifier further includes porous nickel membranes located at the inlets and outlets of the device. The inlets and outlets are capable of fluid communication with external fixtures.

A process chamber, such as for semiconductor processing equipment, is connected with a recovery unit. The recovery unit includes a first storage tank for buffer gas and a second storage tank for rare gas. Both storage tanks are connected with a column in the recovery unit. The recovery unit and process chamber can operate as a closed system. The rare gas can be transported at a variable flow rate while separation in the recovery unit operates at a constant flow condition.

A system for chemical vapor densification includes a reaction chamber having an inlet and outlet; a trap; a conduit fluidly coupled between the outlet of the reaction chamber and the trap; a cryogenic cooler fluidly coupled to the trap though a frustoconical conduit; a first exit path from the cryogenic cooler that vents hydrogen gas to an exhaust; and a second exit path from the cryogenic cooler that recirculates silane and hydrocarbon-rich gas back to the inlet of the reaction chamberand a related method places a substrate in the reaction chamber; establishes a sub-atmospheric pressure inert gas atmosphere within the reaction chamber; densifies the substrate by inputting virgin gas into the reaction chamber; withdraws effluent gas from the reaction chamber; extracts silane and hydrocarbon-rich gas from the effluent gas; and recirculates the silane and hydrocarbon-rich gas back to the reaction chamber.