A treatment device for semiconductor manufacturing exhaust gas of the present invention includes an inlet scrubber, a gas treatment furnace, and an outlet scrubber. The gas treatment furnace includes an outer cylinder having a main body that includes a gas treatment space formed therein and a gas introduction port drilled in a bottom thereof, an inner cylinder that extends across the gas treatment space such that one end thereof is mounted to the bottom inside the main body so as to enclose the gas introduction port and another end thereof is opened and located at a position close to a ceiling surface of the main body, and an electric heater that is hung from a ceiling of the main body and that has a heating element having a long bar shape placed in an internal space of the inner cylinder.

A wafer transporting method includes following operations. A plurality of wafers are received in a semiconductor container attached to a mobile vehicle. An air processing system is coupled to a wall of the semiconductor container. The air processing system includes an inlet valve, an outlet valve, a pump between the inlet valve and the outlet valve, and a desiccant coupled to the pump. The semiconductor container is moved. The pump of the air processing system is turned on to extract air from inside the semiconductor container into the air processing system through the inlet valve. Humidity of the air is reduced when the air passes through the desiccant of the air processing system. The air is returned back to the semiconductor container through the outlet valve.

A PFAS detoxification system 1 includes a concentrator 11 configured to concentrate a waste liquid containing PFAS, discharged from a semiconductor manufacturing apparatus 100; a sulfuric acid processing tub 12 configured to decompose and evaporate a concentrated liquid concentrated by the concentrator 11 with a liquid containing concentrated sulfuric acid; and a cooling apparatus 13 configured to liquefy and collect a gas evaporated by the sulfuric acid processing tub 12.

Disclosed is a process stop loss reduction system, in which in case that pressure in a trapping apparatus and pressure in a process chamber are increased because of space clogging or the like caused by reaction by-products while the trapping apparatus for trapping of a reaction by-product contained in exhaust gas discharged from the process chamber operates over a long period of time during a semiconductor process, only the trapping apparatus, to which a supply of exhaust gas is cut off, may be quickly replaced while inert gas is received in an idle state and continuously supplied to a vacuum pump through a bypass pipe of the trapping apparatus without stopping an operation of (shutting down) a semiconductor manufacturing process chamber facility, and then the trapping apparatus may be supplied with the exhaust gas again.

A gas treatment system includes a first scrubber configured to treat a gas exhausted from a process chamber, a catalytic reactor connected to the first scrubber and configured to treat a gas passing through the first scrubber, and a second scrubber connected to the catalytic reactor and configured to treat a gas passing through the catalytic reactor, where the catalytic reactor includes a fluidized bed reactor (FBR).

A reheating collection device for a gas phase process is provided with a container elongated in an axial direction along an axis to define a chamber, an inflow path and an exhaust path respectively in communication with the chamber and apart in the axial direction from each other, and a heater heating the chamber between the inflow path and the exhaust path.

The present invention discloses methods for extracting and recycling ammonia in MOCVD processes by FTrPSA. Through pretreatment, medium-shallow temperature PSA concentration, condensation and freezing, liquid ammonia vaporization, PSA ammonia extraction, and ammonia gas purification procedures, ammonia-containing exhaust gases from MOCVD processes are purified to meet the electronic-level ammonia gas standard required by the MOCVD processes, so as to implement recycling and reuse of the exhaust gases, where the ammonia gas yield is greater than or equal to 70-85%. The present invention solves the technical problem that atmospheric-pressure or low-pressure ammonia-containing exhaust gases in MOCVD processes cannot be returned to the MOCVD processes for use after being recycled, and fills the gap in green and circular economy development of the LED industry.

Embodiments of point-of-use (POU) abatement device and methods of abating a plurality of gas streams from a corresponding plurality of processing chambers are provided herein. In some embodiments, a compact POU abatement device includes a plurality of inlets respectively coupled to a plurality of process chambers in which each of the process chambers gas streams is isolated from the other gas streams. In some embodiments, the compact POU abatement device can include a plurality of oxidation devices and a corresponding plurality of wet scrubber columns each directly coupled to ones of the plurality of inlets to receive a gas stream from a corresponding process chamber.

An exhaust system including a process chamber in which a semiconductor processing is performed, a buffer connected to the process chamber, the buffer configured to receive waste gas generated during the semiconductor processing and dualize and disperse powder generated from the waste gas may be provided, a reactor configured to burn the waste gas, a wet tank connected to the reactor, arranged below the reactor, and configured to store cleaning water, and a wet tower configured to decompose the powder in the waste gas by using the cleaning water may be provided.

The present invention provides an exhaust gas abatement system for use in semiconductor processing. The system comprising a vacuum pump having an exhaust outlet, a water eductor coupled to the exhaust outlet of the vacuum pump, and a separator coupled to the water eductor. The system further comprises an exhaust gas abatement apparatus coupled to a gaseous exhaust outlet of the separator. Wherein the system is configured such that, in use, an exhaust flow from the exhaust outlet of the vacuum pump is conveyed to the separator via the water eductor, and wherein the separator is configured, in use, to separate a gaseous component of the exhaust flow from the non-gaseous component of the exhaust flow.