Patent classifications
B05C11/08
Automatic pipe doping apparatus
A pipe doping apparatus comprises a bucket assembly including a base and a bucket supported on the base and having an inside volume, a lubricating unit having at least one lubricant applicator inside the bucket; and a source of torque configured to rotate the bucket and/or the lubricating unit relative to a tubular. The apparatus may include a cleaning unit and/or a drying unit and the source of torque may be a fluid jet in either. At least one lubricant applicator may be retractable and may be actuated between a retracted position and an extended position by centripetal force. The apparatus may further include a positioning assembly supporting the base and the rotary bucket assembly and a controller connected to and controlling each of:—the positioning assembly, the cleaning unit, the drying unit, and the lubricating unit.
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
A substrate processing apparatus includes: a first module used in a substrate processing process; a second module used in a substrate processing process after the first module; a nozzle provided in the second module and configured to supply a target treatment liquid; a temperature detector that detects a temperature of a treatment liquid inside the nozzle or a temperature of the nozzle; a substrate detection sensor that detects a position of a substrate; and a controller that controls discharge of the target treatment liquid from the nozzle performed before the substrate is conveyed to the second module according to the temperature of the treatment liquid detected by the temperature detector and the position of the substrate.
Developing method, developing apparatus, and recording medium
A developing method can perform a developing process on a resist film that is exposed to light. The developing method includes forming a developing solution film by supplying a developing solution onto a surface of a substrate having thereon a resist film that is exposed to light; thinning the developing solution film by pushing out the developing solution containing components dissolved from the resist film; and supplying a new developing solution onto the thinned developing solution film.
Developing method, developing apparatus, and recording medium
A developing method can perform a developing process on a resist film that is exposed to light. The developing method includes forming a developing solution film by supplying a developing solution onto a surface of a substrate having thereon a resist film that is exposed to light; thinning the developing solution film by pushing out the developing solution containing components dissolved from the resist film; and supplying a new developing solution onto the thinned developing solution film.
LIQUID SUPPLY UNIT, APPARATUS FOR TREATING SUBSTRATE, AND METHOD OF TREATING SUBSTRATE
Disclosed is a method of treating a substrate, the method including: adjusting a temperature of a treatment liquid by heating the treatment liquid with a heater unit installed in the circulation line while circulating the treatment liquid in a housing of a tank through a circulation line coupled to the housing; treating a substrate by supplying a temperature-controlled treatment liquid to the substrate in a normal mode; and discharging a treatment liquid in the circulation line to the outside of the circulation line through a drain line connected to the circulation line in an emergency mode.
METHOD AND APPARATUS FOR TREATING SUBSTRATE
Provided is a method and apparatus for treating a substrate with a liquid. The substrate treating method comprises a pre-treating step for supplying the treatment liquid containing hydrogen fluoride (HF) to the substrate and treating the substrate before the surface modification step and a surface modification step for supplying an alkene-based chemical onto a substrate to change the surface of the substrate to a hydrophobic state. As a result, the surface of the substrate is uniform, and generation of particles can be reduced when the substrate is removed.
METHOD AND APPARATUS FOR TREATING SUBSTRATE
Provided is a method and apparatus for treating a substrate with a liquid. The substrate treating method comprises a pre-treating step for supplying the treatment liquid containing hydrogen fluoride (HF) to the substrate and treating the substrate before the surface modification step and a surface modification step for supplying an alkene-based chemical onto a substrate to change the surface of the substrate to a hydrophobic state. As a result, the surface of the substrate is uniform, and generation of particles can be reduced when the substrate is removed.
SYSTEM FOR DISPENSING SPIN-ON GLASS (SOG) AND METHOD OF USING
A method of manufacturing a semiconductor device includes detecting, using a sensor, liquid spin on glass (SOG) outside of a dispenser nozzle in an abnormal length relative to the dispenser nozzle. The method further includes adjusting, using a controller, a suck back (SB) valve to withdraw liquid SOG from the abnormal length. The method further includes comparing a sensed amount of liquid SOG deposited onto the semiconductor wafer from the dispenser nozzle with at least one set operating parameter. The method further includes pausing sensing of a duration of dispensing liquid SOG onto the semiconductor wafer based on the sensed amount of liquid SOG deposited being outside the at least one operating parameter.
SYSTEM FOR DISPENSING SPIN-ON GLASS (SOG) AND METHOD OF USING
A method of manufacturing a semiconductor device includes detecting, using a sensor, liquid spin on glass (SOG) outside of a dispenser nozzle in an abnormal length relative to the dispenser nozzle. The method further includes adjusting, using a controller, a suck back (SB) valve to withdraw liquid SOG from the abnormal length. The method further includes comparing a sensed amount of liquid SOG deposited onto the semiconductor wafer from the dispenser nozzle with at least one set operating parameter. The method further includes pausing sensing of a duration of dispensing liquid SOG onto the semiconductor wafer based on the sensed amount of liquid SOG deposited being outside the at least one operating parameter.
Method for manufacturing target object coated with coating substance
A method for manufacturing a target object coated with a coating substance, whose edge face portions and flat face portion can be covered with the coating substance with a predetermined thickness, is provided. The target object T includes a flat face portion Tf and an edge face portion Te continuous from the portion Tf which includes a coating flat surface Tsp formed thereon which has a flat face. The portion Te includes a coating edge surface Tsc which includes at least one of a curved surface or a flat surface that is not parallel to the surface Tsp. The method includes a coating substance supply step of supplying the substance R along at least the surface Tsp, and an edge face portion coating substance adjustment step of adjusting the substance R supplied to the surface Tsc or moved from the surface Tsp to cover the surface Tsc at a predetermined thickness.