An alignment film composition includes a copolymer of a dianhydride-based compound and a diamine-based compound, and a cross-linker. The copolymer has a structure represented by Chemical Formula Ia or Chemical Formula Ib, and the cross-linker is represented by Chemical Formula IIa or Chemical Formula IIb:

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An object of the present invention is to provide a laminated film which can prevent transmission of the water vapor at the high level, and has good flex resistance, and the present invention provides a laminated film comprising at least a gas barrier layer and an inorganic polymer layer being laminated on a resin substrate, wherein concerning a distance from a surface of the inorganic polymer layer in a film thickness direction of the layer and the ratio of an oxygen atom to a total amount of a silicon atom, an oxygen atom, a carbon atom and a nitrogen atom (oxygen atomic ratio), the ratio of a value of the oxygen atomic ratio O/(total amount of Si, O, C and N) in a region from a surface on a side opposite to the gas barrier layer up to 30% of a film thickness of the inorganic polymer in a depth direction to a value of the oxygen atomic ratio O/(total amount of Si, O, C and N) in a region from 30% of a film thickness of the inorganic polymer layer in a depth direction up to a surface on a side of the gas barrier layer is 1.05 or more.

A method of fabricating an interposer includes: providing a carrier substrate; forming a unit redistribution layer on the carrier substrate, the unit redistribution layer including a conductive via plug and a conductive redistribution line; and removing the carrier substrate from the unit redistribution layer. The formation of the unit redistribution layer includes: forming a first photosensitive pattern layer including a first via hole pattern; forming a second photosensitive pattern layer including a second via hole pattern and a redistribution pattern on the first photosensitive pattern layer; at least partially filling insides of the first via hole pattern, the second via hole pattern, and the redistribution pattern with a conductive material; and performing planarization to make a top surface of the unit redistribution layer flat. According to the method, no undercut occurs under a conductive structure and there are no bubbles between adjacent conductive structures, thus device reliability is enhanced and pattern accuracy is realized.

An object of the present invention is to provide a laminated film which can prevent permeation of the water vapor at the higher level, and the present invention provides a laminated film comprising at least a gas barrier layer and an inorganic polymer layer being laminated on a resin substrate, wherein a Y value calculated from a transmission electron microscope image of a cross section of the inorganic polymer layer by the following procedures (a) to (d) is 0.220 or less. (a) A standard deviation (σ) of the contrast of an electron beam-unirradiated part of the inorganic polymer layer is calculated. (b) An electron beam-irradiated part of the inorganic polymer layer is divided into twenty so that divided ones have a film thickness equal in a film thickness direction, and a standard deviation (σn: standard deviation of n.sup.th division, n=1˜20) of the contrast of each divided part is calculated. (c) Xn (n=1˜20) of each divided part is calculated from the expression (1).

Xn=σn/σ(n=1˜20)  (1) (d) A standard deviation of X3 to X18 is defined as Y.

A coating apparatus includes: a rotation holding unit configured to hold and rotate a substrate; a coating liquid supply unit configured to supply a coating liquid onto a surface of the substrate; and a control unit configured to control the rotation holding unit and the coating liquid supply unit. The control unit performs: controlling the coating liquid supply unit to supply the coating liquid onto an encircling line surrounding a rotational center of the substrate while controlling the rotation holding unit to rotate the substrate; followed by controlling the coating liquid supply unit to supply the coating liquid onto a central area; and followed by controlling the rotation holding unit to rotate the substrate at an angular velocity greater than that when the coating liquid is supplied onto the encircling line.

Disclosed and claimed herein is a composition for forming a spin-on hard-mask, having a fullerene derivative and a crosslinking agent. Further disclosed is a process for forming a hard-mask.

Embodiments describe a method of depositing an MOF, including depositing a metal solution onto a substrate, spinning the substrate sufficient to spread the metal solution, depositing an organic ligand solution onto the substrate and spinning the substrate sufficient to spread the organic ligand solution and form a MOF layer.

In certain embodiments an electrode array for epidural stimulation of the spinal cord is provided where the array comprises a plurality of electrodes disposed on a flexible polymer substrate; said electrodes being electrically connected to one or more lead wires and/or connection points on an electrical connector; where the electrodes of said array are bonded to said polymer so that the electrodes can carry an electrical stimulation signal having a voltage, frequency, and current sufficient to provide epidural stimulation of a spinal cord and/or brain in vivo or in a physiological saline solution, without separation of all or a part of an electrode from the polymer substrate.

The present invention discloses single-walled carbon nanotubes horizontal arrays with ultra-high density and the preparation method. The method comprises the following steps: loading a catalyst on a single crystal growth substrate; after annealing, introducing hydrogen into a chemical vapor deposition system to conduct a reduction reaction of the catalyst; and maintaining the introduction of the hydrogen to conduct the orientated growth of a single-walled carbon nanotube. The density of the ultra-high density single-walled carbon nanotube horizontal array obtained by this method exceeds 130 tubes/micrometer, and an electrical performance test is performed on the prepared ultra-high density single-walled carbon nanotube horizontal array shows a high on-current density of 380 μA/μm, and the transconductance of 102.5 μS/μm.

A composition for forming a silica layer, a method for manufacturing a silica layer, a silica layer manufactured by the method, and an electronic device including the silica layer. The composition for forming a silica layer includes a silicon-containing polymer and a solvent compound represented by Chemical Formula 1:

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