A problem is to provide a silver paste which can produce, without variation in resistivity value, a conductive silver coating film exhibiting resistivity substantially equivalent to the resistance value of bulk silver in low-temperature sintering. The problem is solved by providing a silver paste including a silver nanoparticle aqueous dispersion prepared by using a compound having a polyethyleneimine skeleton as a protective agent, a compound having a functional group reactable with nitrogen atoms in the polyethyleneimine, and at least one compound selected from the group consisting of a compound having an amine functional group and a compound having an amide functional group.

A method of depositing material to manufacture an electrostatic chuck is provided. The method first deposits at least one layer of a first dielectric material on a handle using spin coating and/or direct spraying method. A functional electric layer is next deposited on the at least one layer of the first dielectric material. Finally, the electrostatic chuck if formed by depositing at least one layer of a second dielectric material on the functional electric layer and the first dielectric material using spin coating and/or direct spraying method.

Provided is a method and apparatus for treating a substrate with a liquid. The substrate treating method comprises a pre-treating step for supplying the treatment liquid containing hydrogen fluoride (HF) to the substrate and treating the substrate before the surface modification step and a surface modification step for supplying an alkene-based chemical onto a substrate to change the surface of the substrate to a hydrophobic state. As a result, the surface of the substrate is uniform, and generation of particles can be reduced when the substrate is removed.

A substrate holder for a lithographic apparatus has a planarization layer provided on a surface thereof. The planarization layer provides a smooth surface for the formation of a thin film stack forming an electronic component. The planarization layer is of substantially uniform thickness and/or its outer surface has a peak to valley distance of less than 10 μm. The planarization layer may be formed by applying two solutions of different concentration. A surface treatment may be applied to the burls to repel a solution of the planarization layer material.

Embodiments of the invention relate to a composite film and a fabrication method thereof, a photoelectric element and a photoelectric apparatus. The fabrication method of the composite film includes: preparing a polyfluorene-based compound solution, wherein the polyfluorene-based compound solution includes polyfluorene or polyfluorene derivatives; preparing a quantum dot solution; mixing the polyfluorene-based compound solution and the quantum dot solution together to prepare a mixed solution; removing a solvent in the mixed solution to prepare the composite film.

A device, method, and system for creating a design on a design surface are provided. The device includes a first compartment that includes a receiving and positioning component and a channel configured to receive and position a wax stick at the receiving and positioning component. The device includes a second compartment having a melting component that includes a heating element, a temperature measurement element, and a nozzle. The nozzle includes a nozzle opening configured to receive the wax stick, the nozzle directly aligned with the channel of the receiving and positioning component. The nozzle also includes a nozzle tip configured to transfer melted portions of the wax stick from the nozzle to a design surface on a spinning component in a third compartment of the device.

A method of manufacturing a semiconductor device includes detecting, using a sensor, liquid spin on glass (SOG) outside of a dispenser nozzle in an abnormal length relative to the dispenser nozzle. The method further includes adjusting, using a controller, a suck back (SB) valve to withdraw liquid SOG from the abnormal length. The method further includes comparing a sensed amount of liquid SOG deposited onto the semiconductor wafer from the dispenser nozzle with at least one set operating parameter. The method further includes pausing sensing of a duration of dispensing liquid SOG onto the semiconductor wafer based on the sensed amount of liquid SOG deposited being outside the at least one operating parameter.

The present disclosure is generally related to semiconductor devices, and more particularly to a dielectric material formed in semiconductor devices. The present disclosure provides methods for forming a dielectric material layer by a cyclic spin-on coating process. In an embodiment, a method of forming a dielectric material on a substrate includes spin-coating a first portion of a dielectric material on a substrate, curing the first portion of the dielectric material on the substrate, spin-coating a second portion of the dielectric material on the substrate, and thermal annealing the dielectric material to form an annealed dielectric material on the substrate.

A method may include stretching a deformable bounding element into a stretched state. The method may further include coating the deformable bounding element with at least one layer of an anti-reflective material while the deformable bounding element is in the stretched state and assembling an optical lens assembly including the deformable bounding element, such that the optical lens assembly adjusts at least one optical property by controlling a shape of the deformable bounding element. The deformable bounding element may have less tension when in a neutral state than the deformable bounding element has when in the stretched state. The method may additionally include coating the deformable bounding element with at least one layer of an anti-reflective material while the deformable bounding element is not in a stretched state. Various other apparatuses, systems, and methods are also disclosed.

Provided are flexible electronics stacks and methods of use. An example flexible electronics stack includes a flexible polymeric substrate film and a rigid inorganic electronic component. The flexible polymeric substrate film includes a thermoset polymer prepared by curing a monomer solution; wherein the monomer solution comprises about 25 wt % to about 65 wt % of one or more thiol monomers and from about 25 wt % to about 65 wt % of one or more co-monomers.