An ultrasound device (10) is disclosed comprising a transducer arrangement (110) and an acoustically transmissive window (150) over said arrangement, said window comprising an elastomer layer (153) having conductive particles dispersed in the elastomer, the elastomer layer having a pressure-sensitive conductivity, the ultrasound device further comprising an electrode arrangement (160) coupled to said elastomer layer and adapted to measure said pressure-sensitive conductivity. An ultrasound system and arrangement including such an ultrasound device are also disclosed.

An electronic device includes a substrate layer having a front surface and a back surface opposite the front surface, a plurality of ultrasonic transducers formed on the front surface of the substrate layer, wherein the plurality of ultrasonic transducers generate backward waves during operation, the backward waves propagating through the substrate layer, and a plurality of substrate structures formed within the back surface of the substrate layer, the plurality of substrate structures configured to modify the backward waves during the operation.

The present disclosure provides an acoustic transducer unit and a manufacturing method thereof, and an acoustic transducer, the acoustic transducer unit includes: a base substrate; a first electrode on the base substrate; a support pattern on a side of the first electrode away from the base substrate, which is enclosed into an accommodation groove, at least one release groove and at least one connection groove, an orthographic projection of the release groove on the base substrate is spaced apart from that of the accommodation groove on the base substrate, the connection groove is between the accommodation groove and the release groove to communicate them; a diaphragm pattern on the side of the first electrode away from the base substrate and capable of vibrating in the accommodation groove; a filling pattern in the release groove; a second electrode on a side of the diaphragm pattern away from the base substrate.

An ultrasonic detection device, including a substrate, sensing elements, a first test element, a first dummy element, at least one first common signal line, sensing signal lines, and at least one test signal line, is provided. The sensing elements, the first test element, and the first dummy element are located on the substrate. The first test element is located between the sensing elements and the first dummy element. Each of the sensing elements, the first test element, and the first dummy element includes an array of capacitive microelectromechanical ultrasonic transducers. The first common signal line is electrically connected to the sensing elements and the first test element. The sensing signal lines are electrically connected to the sensing elements. The test signal line is electrically connected to the first test element.

Aspects of the technology described herein relate to ultrasound transducer devices including capacitive micromachined ultrasonic transducers (CMUTs) and methods for forming CMUTs in ultrasound transducer devices. Some embodiments include forming a cavity of a CMUT by forming a first layer of insulating material on a first substrate, forming a second layer of insulating material on the first layer of insulating material, and then etching a cavity in the second insulating material. A second substrate may be bonded to the first substrate to seal the cavity. The first layer of insulating material may include, for example, aluminum oxide. The first substrate may include integrated circuitry. Some embodiments include forming through-silicon vias (TSVs) in the first substrate prior to forming the first and second insulating layers (TSV-Middle process) or subsequent to bonding the first and second substrates (TSV-Last process).

A method includes a step of forming a sacrificial layer on a first film, a step of forming a second film on the sacrificial layer, a step of forming an etching opening that extends through at least one of the first film and the second film so as to communicate with the sacrificial layer, and a step of forming a hollow portion by etching the sacrificial layer using a gas containing a fluorine-containing gas and hydrogen via the etching opening, wherein a composition ratio of silicon to nitrogen in a first region having a face in contact with the sacrificial layer is larger than a composition ratio of silicon to nitrogen in a second region not including the first region.

A method of manufacturing a semiconductor device includes: forming a first substrate includes a membrane stack over a first dielectric layer, the membrane stack having a first electrode, a second electrode over the first electrode and a piezoelectric layer between the first electrode and the second electrode, a third electrode over the first dielectric layer, and a second dielectric layer over the membrane stack and the third electrode; forming a second substrate, including: a redistribution layer (RDL) over a third substrate, the RDL having a fourth electrode; and a first cavity on a surface of the RDL adjacent to the fourth electrode; forming a second cavity in one of the first substrate and the second substrate; and bonding the first substrate to the second substrate.

The invention provides an ultrasound system comprising an ultrasound probe, adapted to transmit and receive ultrasound signals, and an interventional device for insertion into a vessel of a subject. The interventional device includes an ultrasound transducer adapted to acquire a first set of ultrasound data at a first ultrasound frequency, wherein the first set of ultrasound data relates to flow data. The ultrasound system is further adapted exchange a second set of ultrasound data between the ultrasound probe and the interventional device at a second ultrasound frequency different from the first ultrasound frequency, wherein the second ultrasound data relates to interventional device positioning data.

Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device includes an interconnect structure disposed over a semiconductor substrate. A dielectric structure is disposed over the interconnect structure. A plurality of cavities are disposed in the dielectric structure. A microelectromechanical system (MEMS) substrate is disposed over the dielectric structure, where the MEMS substrate comprises a plurality of movable membranes, and where the movable membranes overlie the cavities, respectively. A plurality of fluid communication channels are disposed in the dielectric structure, where each of the fluid communication channels extend laterally between two neighboring cavities of the cavities, such that each of the cavities are in fluid communication with one another.

Exemplary slurry delivery assemblies may include a slurry fluid source. The assemblies may include a flurry delivery lumen having a lumen inlet and a lumen outlet. The lumen inlet may be fluidly coupled with an output of the slurry fluid source. The assemblies may include a deagglomeration tube fluidly coupled with the lumen outlet. The deagglomeration tube may include a tube inlet and a tube outlet. The assemblies may include one or more ultrasonic transducers coupled with the deagglomeration tube.