A method of manufacturing an ultrasound imaging device involves forming an interposer structure, including forming a first metal material within openings through a substate and on top and bottom surfaces of the substrate, patterning the first metal material, forming a dielectric layer over the patterned first metal material, forming openings within the dielectric layer to expose portions of the patterned first metal material, filling the openings with a second metal material, forming a third metal material on the top and bottom surfaces of the substrate, and patterning the third metal material. The method further involves forming a packaging structure for an ultrasound-on-chip device, including attaching a multi-layer flex substrate to a carrier wafer, bonding a first side of an ultrasound-on-chip device to the multi-layer flex substrate, bonding a second side of the ultrasound-on-chip device to a first side of the interposer structure, and removing the carrier wafer.

Acoustic forces in an acoustic field can be increased via introduction of “seeding particles” with higher or similar contrast factor and/or size relative to the particles targeted for retention in the acoustic field. This feature may be implemented in an acoustic concentration device or an acoustic separation device. Increases in acoustic forces lead to better particle retention and can permit increased flow rates through an acoustic particle processing device.

A semiconductor device and method of manufacturing the device that includes a capacitive micromachined ultrasonic transducer (CMUT). The CMUT includes an integrated circuit substrate, and a sensing electrode positioned on the integrated substrate. The sensing electrode includes a sidewall that forms a wall of an isolation trench adjacent to the sensing electrode, and is patterned before covering dielectric layers are deposited. After patterning of the sensing electrode, one or more dielectric layers are patterned, with one dielectric layer patterned on the sensing electrode and sidewall, and which has a thickness corresponding to the surface roughness of the sensing electrode. The CMUT further includes a membrane positioned above the sensing electrode forming a cavity therein.

Aspects of the technology described herein relate to ultrasound device circuitry as may form part of a single substrate ultrasound device having integrated ultrasonic transducers. The ultrasound device circuitry may facilitate the generation of ultrasound waveforms in a manner that is power- and data-efficient.

A universal ultrasound device having an ultrasound probe includes a semiconductor die; a plurality of ultrasonic transducers integrated on the semiconductor die, the plurality of ultrasonic transducers configured to operate a first mode associated with a first frequency range and a second mode associated with a second frequency range, wherein the first frequency range is at least partially non-overlapping with the second frequency range; and control circuitry configured to: control the plurality of ultrasonic transducers to generate and/or detect ultrasound signals having frequencies in the first frequency range, in response to receiving an indication to operate the ultrasound probe in the first mode; and control the plurality of ultrasonic transducers to generate and/or detect ultrasound signals having frequencies in the second frequency range, in response to receiving an indication to operate the ultrasound probe in the second mode.

A ultrasonic transducer device includes a transducer bottom electrode layer disposed over a substrate, and a plurality of vias that electrically connect the bottom electrode layer with the substrate, wherein substantially an entirety of the plurality of vias are disposed directly below a footprint of a transducer cavity. Alternatively, the transducer bottom electrode layer includes a first metal layer in contact with the plurality of vias and a second metal layer formed on the first metal layer, the first metal layer including a same material as the plurality of vias.

The present disclosure provides an ultrasonic transducer unit and a manufacturing method thereof. The ultrasonic transducer unit includes a substrate, a first electrode arranged on the substrate, an insulating layer arranged on the first electrode, a vibrating film arranged on the insulating layer, a closed cavity being between the vibrating film and the insulating layer, and a second electrode arranged on the vibrating film. The vibrating film is made of a photoresist. The ultrasonic transducer unit disclosed by the present disclosure adopts the photoresist as a material of the insulating layer and/or the vibrating film, so that the ultrasonic transducer unit with better performance can be obtained.

Some disclosed implementations include an ultrasonic sensor stack and an acoustic resonator. The acoustic resonator may be configured to enhance ultrasonic waves transmitted by the ultrasonic sensor stack in an ultrasonic frequency range that is suitable for ultrasonic fingerprint sensors. In some examples, the acoustic resonator may include one or more low-impedance layers residing between a first higher-impedance layer and a second higher-impedance layer. Each of the one or more low-impedance layers may have a lower acoustic impedance than an acoustic impedance of the first higher-impedance layer or an acoustic impedance of the second higher-impedance layer. At least one low-impedance layer may have a thickness corresponding to a multiple of a half wavelength at a peak frequency of the acoustic resonator. The peak frequency may be within a frequency range from 1 MHz. to 20 MHz.

The present disclosure relates to a CUT transducer (200) comprising: —a conductive or semiconductor substrate (201) coated with a stack of one or a plurality of dielectric layers (203, 213); —a cavity (205, 215) formed in said stack; —a conductive or semiconductor membrane (221) suspended above the cavity; —at the bottom of the cavity, a conductive region (209) in contact with the upper surface of the substrate, said conductive region being interrupted on a portion of the upper surface of the substrate; and—in the cavity, a stop structure (207) made of a dielectric material localized on or above the area of interruption of the conductive region (209).

According to one embodiment, an ultrasonic probe includes: an oscillator; a base on which the oscillator is provided; a base conductive wire portion connected to the oscillator; a bump electrode portion supplying a signal to the oscillator via the base conductive wire portion; a pad portion engaging with the bump electrode portion; and an acoustic lens provided such that a force toward the bump electrode portion is applied to the pad portion.