A vibration structure that includes a film constructed to deform in a plane direction as voltage is applied thereto, a frame-shaped member, a vibration portion surrounded by the frame-shaped member in a plan view of the vibration structure, a support portion connecting the vibration portion and the frame-shaped member and supporting the vibration portion within the frame-shaped member, a first connection member that connects the film and the frame-shaped member, and a second connection member that connects the film to the vibration portion such that the vibration portion vibrates in the plane direction when the film is deformed in the plane direction. The support portion is disposed at a position closer to a center of gravity of the vibration portion than an end portion of the vibration portion when viewed in the plan view.

Provided is a vibration panel including an inner member, a first outer member, a second outer member, a piezoelectric actuator, an actuator bonding layer, and a filler. The inner member includes first and second main surfaces. The first outer member includes third and fourth main surfaces, the third main surface including a first region and a second region. The second outer member includes fifth and sixth main surfaces, the fifth main surface including a third region and a fourth region. The piezoelectric actuator causes vibration. The actuator bonding layer is disposed between the piezoelectric actuator and the second region and bonds the piezoelectric actuator to the second region. The filler fills a space between the second region and the fourth region and covers the piezoelectric actuator.

A vibration device includes a semiconductor substrate having a first surface and a second surface in an obverse-reverse relationship, a vibration element disposed on the first surface, a lid bonded to the first surface, an integrated circuit disposed on the first surface, a terminal disposed on the second surface, a through electrode which penetrates the semiconductor substrate, and is configured to electrically couple the terminal and the integrated circuit to each other, and a first capacitor which is provided with a first recess provided to the semiconductor substrate and opening in the first surface, an insulating film disposed on an inside surface of the first recess, and an electrically-conductive material filling the first recess, and has a first capacitance between the electrically-conductive material and the semiconductor substrate, wherein the electrically-conductive material does not have contact with the terminal at the second surface side.

A nicotine delivery device (200) for generating a mist containing nicotine for inhalation by a user. The device comprises a mist generator device (201) and a driver device (202). The driver device (202) is configured to drive the mist generator device (201) at an optimum frequency to maximise the efficiency of mist generation by the mist generator device (201).

A nicotine delivery device (200) for generating a mist containing nicotine for inhalation by a user. The device comprises a mist generator device (201) and a driver device (202). The driver device (202) is configured to drive the mist generator device (201) at an optimum frequency to maximise the efficiency of mist generation by the mist generator device (201).

An ultrasonic transducer includes: a laminate in which a plurality of acoustic members is laminated; and an adhesive layer that includes a silane coupling agent and an adhesive, the adhesive layer joining any two of the plurality of acoustic members to each other, wherein the silane coupling agent has a structure represented by general formula (1):

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wherein R.sub.1s each independently represent a methoxy group or an ethoxy group, R.sub.2 represents a methoxy group, an ethoxy group, or a hydrogen atom, X represents a linear or branched organic chain having 4 or more continuous carbon atoms, and A represents a reactive functional group.

An acoustic transducer includes a substrate element having a first side, and a second side opposite the first side. The acoustic transducer also includes first and second piezoelectric elements coupled to the first side, and third and fourth piezoelectric elements coupled to the second side. The first piezoelectric element has a first polarity, and the second piezoelectric element has a second polarity different than the first polarity. The third piezoelectric element has a third polarity, and the fourth piezoelectric element has a fourth polarity different than the third polarity.

An ultrasonic transducer of this invention includes a rigid substrate with opening parts extending between bottom and top surfaces, a flexible resin film fixed to the top surface of the substrate to cover the opening parts, and piezoelectric elements fixed to a top surface of the resin film so as to overlap in a plan view with the opening parts, respectively. An arrangement pitch of the piezoelectric elements is preferably set to be equal to or less than 4.3 mm, and the piezoelectric element may have a rectangular shape in the plan view having longitudinal and lateral dimensions in the plan view with a maximum value of 4.0 mm or less, a circular shape in the plan view having a diameter of 4.0 mm or less, or an elliptical shape in the plan view having a major axis of 4.0 mm or less.

An ultrasonic transducer of this invention includes a rigid substrate with opening parts extending between bottom and top surfaces, a flexible resin film fixed to the top surface of the substrate to cover the opening parts, and piezoelectric elements fixed to a top surface of the resin film so as to overlap in a plan view with the opening parts, respectively. An arrangement pitch of the piezoelectric elements is preferably set to be equal to or less than 4.3 mm, and the piezoelectric element may have a rectangular shape in the plan view having longitudinal and lateral dimensions in the plan view with a maximum value of 4.0 mm or less, a circular shape in the plan view having a diameter of 4.0 mm or less, or an elliptical shape in the plan view having a major axis of 4.0 mm or less.

Acoustic forces in an acoustic field can be increased via introduction of “seeding particles” with higher or similar contrast factor and/or size relative to the particles targeted for retention in the acoustic field. This feature may be implemented in an acoustic concentration device or an acoustic separation device. Increases in acoustic forces lead to better particle retention and can permit increased flow rates through an acoustic particle processing device.