Embodiments of the present disclosure are directed to additive manufacturing apparatuses, cleaning stations incorporated therein, and methods of cleaning using the cleaning stations.

A mop washing bucket has a container with an interior volume defined by a bottom and a wall extending upwardly from the bottom, a fluid inlet affixed adjacent to the bottom of the container, and a fluid outlet formed on the container in a location above the fluid inlet. The fluid inlet is adapted to be connected to a water hose. The fluid inlet extends through the wall of the container so as to have one end in the interior volume of the container and another end exterior of the wall of the container. The fluid outlet is adapted to allow water from the interior volume of the container to flow outwardly of the container.

A fluid heating device includes an outer cylindrical member, and inner cylindrical members arranged inside the outer cylindrical member, a container in which fluid is supplied to a fluid space between an inner surface of the outer cylindrical member and outer surfaces of the inner cylindrical members, lamp heaters arranged in the inner cylindrical members, a first nozzle member arranged on a leading end side of the lamp heaters and having an air supply port, and a first guide mechanism that guides first gas supplied from the air supply port of the first nozzle member. The inner cylindrical members include a central inner cylindrical member arranged at a center of the outer cylindrical member in a plane orthogonal to a central axis of the outer cylindrical member, and a plurality of peripheral inner cylindrical members arranged around the central inner cylindrical member. The lamp heaters include a central lamp heater arranged in the central inner cylindrical member and peripheral lamp heaters respectively arranged in the plurality of peripheral inner cylindrical members. The first guide mechanism guides the first gas to a leading end side of the central lamp heater.

Exemplary semiconductor chamber component cleaning systems may include a receptacle. The receptacle may include a bottom lid that may be an annulus. The annulus may be characterized by an inner annular wall and an outer annular wall. A plurality of recessed annular ledges may be defined between the inner annular wall and the outer annular wall. Each recessed annular ledge of the plurality of recessed annular ledges may be formed at a different radial position along the bottom lid. The cleaning systems may include a top lid removably coupled with the bottom lid about an exterior region of the top lid. The cleaning systems may include a tank defining a volume to receive the receptacle.

An apparatus for conditioning a component of a processing chamber is provided. A tank for holding a megasonic conditioning solution is provided. A mount holds the component immersed in a megasonic conditioning solution, when the tank is filled with the megasonic conditioning solution. A megasonic conditioning solution inlet system delivers the megasonic conditioning solution to the tank. A megasonic transducer head comprises at least one megasonic transducer to provide megasonic energy to the megasonic conditioning solution, wherein the megasonic energy is delivered to the component via the megasonic conditioning solution. A megasonic conditioning solution drain system drains the megasonic conditioning solution from the tank at a location above where the component is held in the megasonic conditioning solution. An actuator moves the megasonic transducer head across the tank.

A substrate processing apparatus includes a processing tub, a liquid recovery unit, a liquid recovery unit drain line, a storage, a first and a second liquid supply lines, a discharge line, a first and a second liquid flow rate controllers. The liquid recovery unit receives a processing liquid overflown from the processing tub. The liquid recovery unit drain line drains the processing liquid from the liquid recovery unit. The first and the second liquid supply lines supply a first and a second liquids, respectively. The cleaning liquid contains the first liquid and the second liquid, and removes a precipitate from the processing liquid. The discharge line discharges the cleaning liquid, the first liquid or the second liquid toward the liquid recovery unit. The first and the second liquid flow rate controllers are provided at the first and the second liquid supply lines, and adjust flow rates thereof, respectively.

A substrate processing apparatus includes a processing tub, a storage, a liquid recovery unit, a storage drain line and a liquid recovery unit drain line. The processing tub is allowed to accommodate therein multiple substrates, and configured to store therein a processing liquid. The storage is connected to the processing tub, and configured to store therein the processing liquid drained from the processing tub. The liquid recovery unit is configured to receive the processing liquid overflown from the processing tub. The storage drain line is configured to drain a liquid stored in the storage. The liquid recovery unit drain line is configured to drain a liquid received from the liquid recovery unit to an external drain line provided at an outside.

A substrate processing device according to the present embodiment includes a processing tank configured to be capable of accumulating a liquid. A conveyer can array a plurality of semiconductor substrates in such a manner that front surfaces of the semiconductor substrates face a substantially horizontal direction, and transport the semiconductor substrates into the processing tank. A plurality of liquid suppliers can supply the liquid toward an inside of the processing tank from a lower portion of the processing tank. A plurality of current plates are arranged on at least either one end side or the other end side of an array of the semiconductor substrates. The current plates are provided in a first gap region above the semiconductor substrates in gaps between the conveyer and a sidewall of the processing tank on both sides of the conveyer as viewed from an array direction of the semiconductor substrates.

The present invention relates to a wafer cleaning device which can prevent a cleaning solution from leaking and enables prompt treatment. The present invention provides a wafer cleaning device comprising: a cleaning bath which receives a cleaning solution and from which the cleaning solution overflows according to the dipping of wafers; a plurality of lift parts arranged at the outside of the cleaning bath and dipping the cassette into the cleaning solution in the cleaning bath; an external water tank having the cleaning bath and the lift parts received therein and including a drain hole through which the cleaning solution is drained; and a tray which can be detachably attached to the inner bottom surface of the external water tank and collects the cleaning solution to guide same to the drain hole.

A method for conditioning a component of a wafer processing chamber is provided. The component is placed in an ultrasonic conditioning solution in an ultrasonic solution tank. Ultrasonic energy is applied through the ultrasonic conditioning solution to the component to clean the component. The component is submerged in a megasonic conditioning solution in a tank. Megasonic energy is applied through the megasonic conditioning solution to the component to clean the component.