A system for and method of improving fluid flow is provided. The system includes a discharge manifold defining a primary flow path partially obstructed by one or more flow diverter. The flow diverter includes an obtrusion pair, each obtrusion of the obtrusion pair extending from a rear wall of the discharge manifold into an interior area of the discharge manifold, thereby creating a void along the primary flow path. The system further includes a first nozzle extending through the primary flow path and into the void such that a nozzle inlet of the first nozzle is positioned at least partially within the void. The system further includes a plurality of subsequent nozzles, each of the first and subsequent nozzles defining a respective secondary flow path for directing fluid away from the discharge manifold. The method includes utilizing obtrusion pairs to reduce or eliminate hydraulic skip.

Substrates are immersed in a treatment fluid stored in a treatment chamber, and subjected to a surface treatment. A first lid and a second lid cover an upper opening of the treatment chamber. The first lid and the second lid each include sloped surfaces. At least a part of the first lid and the second lid is immersed in the treatment fluid. During the treatment on the substrates, a plurality of bubble supply pipes eject bubbles into the treatment fluid. The sloped surfaces formed on the first lid and the second lid guide the bubbles reaching an interface between the treatment fluid, the first lid, and the second lid diagonally upward. Thus, the bubbles are smoothly released outside the treatment chamber. This can eliminate retention of the bubbles, avoid contacts between the bubbles and the substrates, and suppress a decrease in the treatment uniformity.

A method for conditioning a component of a wafer processing chamber is provided. The component is placed in an ultrasonic conditioning solution in an ultrasonic solution tank. Ultrasonic energy is applied through the ultrasonic conditioning solution to the component to clean the component. The component is submerged in a megasonic conditioning solution in a tank. Megasonic energy is applied through the megasonic conditioning solution to the component to clean the component.

A liquid storage tank may include a body with an inner cavity, wherein a first liquid storage area and a second liquid storage area are provided in the body, and a partition is provided between the first liquid storage area and the second liquid storage area. A heater for heating solution is provided in the first liquid storage area. A liquid outlet is provided in the second liquid storage area.

Processing unevenness within a substrate surface is further suppressed even in a case where an upward flow rate increases. A substrate processing device includes a controller that controls, on the basis of a flow rate of a processing liquid which is controlled by a second flow rate control mechanism, a first flow rate control mechanism so that a flow rate of gas supplied to a first gas supply pipe is larger than a flow rate of gas supplied to a second gas supply pipe.

Unevenness of speed at which a processing liquid flows in a process tank is eliminated and processing unevenness within a substrate surface is further suppressed. A substrate processing device includes an outer gas bubble generation pipe and an inner gas bubble generation pipe, and a plurality of discharge holes which each of the inner gas bubble generation pipe and the outer gas bubble generation pipe has includes a first discharge hole having a first hole diameter and a second discharge hole having a second hole diameter that is larger than the first hole diameter.

In order to provide a device and a method for treating workpieces (102), which allow optimum treatment of the workpieces, a treatment station (114) comprises a treatment chamber (136) that can be flooded for the purpose of treating the workpiece.