A self-cleaning film system includes a substrate and a film. The film includes a monolayer formed from a fluorinated material, and a first plurality of regions disposed within the monolayer and spaced apart from one another such that each of the regions abuts, is surrounded by, and is not covered by the fluorinated material. Each of the regions includes a photocatalytic material. The system also includes a wave guide disposed adjacent the substrate. The wave guide includes a first light source configured for emitting a first portion of electromagnetic radiation towards the film having an ultraviolet wavelength of from 10 nm to 400 nm, and a second light source configured for emitting a second portion of electromagnetic radiation towards the film having an infrared wavelength of from 700 nm to 1 mm. A method of forming a self-cleaning film system configured for reducing a visibility of a contaminant is disclosed.

A mask cleaning apparatus includes: a mask holding unit configured to hold a mask; a light source unit configured to irradiate light onto the mask to remove a deposition material accumulated on a surface of the mask; and a material collecting unit configured to collect the deposition material removed from the mask, wherein the material collecting unit includes: a plurality of collecting cases corresponding to kinds of the deposition material; a rotating plate having a suction hole; and a plate driving unit configured to rotate the rotating plate to connect the suction hole to at least one of the collecting cases. Based on the irradiated light, different organic deposition materials may be collected for reuse.

Methods for conditioning interior surfaces of a process chamber are provided herein. In one embodiment a method of conditioning interior surfaces of a process chamber is provided. The method comprises maintaining a process chamber at a first pressure and at a first temperature of less than about 800 degrees Celsius, providing a process gas to the process chamber at the first pressure and the first temperature, wherein the process gas comprises chlorine (Cl.sub.2) and high IR absorption gas, and exposing the process gas to radiant energy to remove residue disposed on interior surfaces of the process chamber.

A method for treatment of a plastic transport box for conveyance and atmospheric storage of substrates including walls bounding a volume intended for storage of substrates, and a station for treatment of transport boxes for conveyance and atmospheric storage of substrates, the method including: at least one plasma treatment in which at least one interior wall of the transport box is subjected to a plasma of a treatment gas at a gas pressure lower than 10000 pascals.

A method of processing a plurality of substrates includes immersing the plurality of substrates into a bath solution contained in a bath chamber; generating gas bubbles in the bath solution; projecting light from a light source toward the bath chamber; generating light sensor data by capturing light emanating off the bath chamber after interacting with the gas bubbles with a light sensor; and converting the light sensor data into a metric for the bath solution.

Proposed are a method and a system for removing L-FC in a plasma etching process, in which L-FC, which is condensed on a wafer, an electrode, a substrate, a head, or the like, is removed by using infrared or ultraviolet rays in a plasma etching process using an L-FC precursor.