B22F1/054

Soft magnetic powder, powder magnetic core, magnetic element, and electronic device

A soft magnetic powder of the invention has a composition represented by Fe.sub.100-a-b-c-d-e-fCu.sub.aSi.sub.bB.sub.cM.sub.dM′.sub.eX.sub.f (at %) [wherein M is Nb, W, Ta, Zr, Hf, Ti, or Mo, M′ is V, Cr, Mn, Al, a platinum group element, Sc, Y, Au, Zn, Sn, or Re, X is C, P, Ge, Ga, Sb, In, Be, or As, and a, b, c, d, e, and f are numbers that satisfy the following formulae: 0.1≤a≤3, 0<b≤30, 0<c≤25, 5≤b+c≤30, 0.1≤d≤30, 0≤e≤10, and 0≤f≤10], wherein a crystalline structure having a particle diameter of 1 nm or more and 30 nm or less is contained in an amount of 40 vol % or more, and the difference in the coercive force of the powder after classification satisfies predetermined conditions.

Gold-coated flat silver particles, gold-coated flat silver particle dispersion, method of manufacturing gold-coated flat silver particles, coating film, and antireflection optical member
11541455 · 2023-01-03 · ·

Provided are gold-coated flat silver particles, a dispersion including the gold-coated flat silver particles and a dispersion medium, a method of the dispersion, a coating film including the gold-coated flat silver particles, and an antireflection optical member. The gold-coated flat silver particles include flat silver particles and a gold coating layer, in which an average thickness of the gold coating layer on principal planes of the particles is 0.1 nm to 2 nm, and a ratio of the average thickness of the gold coating layer on the principal planes of the particles to an average thickness of the gold coating layer on edge surfaces of the particles is 0.02 or higher.

TUNGSTEN CARBIDE-BASED CEMENTED HARD MATERIAL
20220411904 · 2022-12-29 ·

A tungsten-carbide-based hard material includes the following components: tungsten carbide with an average particle size of 0.1-1.3 μm; 1.0-5.0 wt. % (Co+Ni), with a ratio of Co/(Co+Ni) in wt. % of 0.4≤Co/(Co+Ni)≤0.95; 0.1-1.0 wt. % Cr, with a ratio of Cr to (Co+Ni) in wt. % of 0.05 Cr/(Co+Ni) 0.20; 0.01-0.3 wt. % Mo; and 0.02-0.45 wt. % Me, where Me represents one or more elements from the group Ta, Nb, Hf and Ti, preferably Ta and/or Nb; and wherein 0.01≤Me/(Co+Ni)≤0.13.

TUNGSTEN CARBIDE-BASED CEMENTED HARD MATERIAL
20220411904 · 2022-12-29 ·

A tungsten-carbide-based hard material includes the following components: tungsten carbide with an average particle size of 0.1-1.3 μm; 1.0-5.0 wt. % (Co+Ni), with a ratio of Co/(Co+Ni) in wt. % of 0.4≤Co/(Co+Ni)≤0.95; 0.1-1.0 wt. % Cr, with a ratio of Cr to (Co+Ni) in wt. % of 0.05 Cr/(Co+Ni) 0.20; 0.01-0.3 wt. % Mo; and 0.02-0.45 wt. % Me, where Me represents one or more elements from the group Ta, Nb, Hf and Ti, preferably Ta and/or Nb; and wherein 0.01≤Me/(Co+Ni)≤0.13.

INTERCONNECT STRUCTURE FOR SEMICONDUCTOR WITH ULTRA-FINE PITCH AND FORMING METHOD THEREOF
20220415846 · 2022-12-29 ·

This application relates to semiconductor manufacturing, and more particularly to an interconnect structure for semiconductors with an ultra-fine pitch and a forming method thereof. The forming method includes: preparing copper nanoparticles using a vapor deposition device, where coupling parameters of the vapor deposition device are adjusted to control an initial particle size of the copper nanoparticles; depositing the copper nanoparticles on a substrate; invertedly placing a chip with copper pillars as I/O ports on the substrate; and subjecting the chip and the substrate to hot-pressing sintering to enable the bonding.

INTERCONNECT STRUCTURE FOR SEMICONDUCTOR WITH ULTRA-FINE PITCH AND FORMING METHOD THEREOF
20220415846 · 2022-12-29 ·

This application relates to semiconductor manufacturing, and more particularly to an interconnect structure for semiconductors with an ultra-fine pitch and a forming method thereof. The forming method includes: preparing copper nanoparticles using a vapor deposition device, where coupling parameters of the vapor deposition device are adjusted to control an initial particle size of the copper nanoparticles; depositing the copper nanoparticles on a substrate; invertedly placing a chip with copper pillars as I/O ports on the substrate; and subjecting the chip and the substrate to hot-pressing sintering to enable the bonding.

Method for laser-assisted manufacturing

A laser-assisted microfluidics manufacturing process has been developed for the fabrication of additively manufactured structures. Roll-to-roll manufacturing is enhanced by the use of a laser-assisted electrospray printhead positioned above the flexible substrate. The laser electrospray printhead sprays microdroplets containing nanoparticles onto the substrate to form both thin-film and structural layers. As the substrate moves, the nanoparticles are sintered using a laser beam directed by the laser electrospray printhead onto the substrate.

Method for laser-assisted manufacturing

A laser-assisted microfluidics manufacturing process has been developed for the fabrication of additively manufactured structures. Roll-to-roll manufacturing is enhanced by the use of a laser-assisted electrospray printhead positioned above the flexible substrate. The laser electrospray printhead sprays microdroplets containing nanoparticles onto the substrate to form both thin-film and structural layers. As the substrate moves, the nanoparticles are sintered using a laser beam directed by the laser electrospray printhead onto the substrate.

Synthesis of highly ordered nanoparticle arrays in anisotropic nanoreactors

Disclosed herein are methods for forming one or more nanoparticles. The methods include depositing a solution comprising a block copolymer and a metal salt into one or more square pyramidal nanoholes formed in a substrate, and annealing the substrate to provide a single nanoparticle in each of the one or more square pyramidal nanoholes.

Synthesis of highly ordered nanoparticle arrays in anisotropic nanoreactors

Disclosed herein are methods for forming one or more nanoparticles. The methods include depositing a solution comprising a block copolymer and a metal salt into one or more square pyramidal nanoholes formed in a substrate, and annealing the substrate to provide a single nanoparticle in each of the one or more square pyramidal nanoholes.