This application relates to semiconductor manufacturing, and more particularly to an interconnect structure for semiconductors with an ultra-fine pitch and a forming method thereof. The forming method includes: preparing copper nanoparticles using a vapor deposition device, where coupling parameters of the vapor deposition device are adjusted to control an initial particle size of the copper nanoparticles; depositing the copper nanoparticles on a substrate; invertedly placing a chip with copper pillars as I/O ports on the substrate; and subjecting the chip and the substrate to hot-pressing sintering to enable the bonding.

A single crystal particle powder having a crystal structure of TbCu.sub.7-type of the present invention is represented by the general formula:

[Chemical Formula 1]

(R.sub.1-zM.sub.z)T.sub.x  (1)

or the general formula:

[Chemical Formula 2]

(R.sub.1-zM.sub.z)T.sub.xN.sub.y  (2)

and has a crystal structure of TbCu.sub.7-type,
wherein R is at least one element selected from the group consisting of Sm and Nd, T is at least one element selected from the group consisting of Fe and Co, x is 7.0≤x≤10.0, y is 1.0≤y≤2.0, and z is 0.0≤z≤0.3.

The present disclosure relates to an Ag paste composition and a bonding film produced using same, the Ag paste composition being coated on a first object, and the first object being pressure sintered toward a second object side, thereby forming a sintered bonding layer between the first object and the second object, wherein the Ag paste composition comprises 90˜99 wt % of Ag powder, and 1˜10 wt % of an organic binder. The present disclosure controls the specific surface area and grain shape of the Ag powder, even without applying a spherical nanoparticle powder, and thus has the advantages of lowering a bond temperature and increasing bond density, thereby enabling the improvement of bond strength and reliability.

A plasma atomization metal powder manufacturing process includes providing a heated metal source and contacting the heated metal source with the plasma of at least one plasma source under conditions effective for causing atomization of the heated metal source. The atomization may be carried out using a gas to metal ratio of less than about 20, thereby obtaining a raw metal powder having a 0-106 μm particle size distribution yield of at least 80%. The process may further include aligning the heated metal source with the plasma of at least one plasma source. An atomizing system may include an alignment system positioned upstream of the plasma source and adapted to adjust an orientation of the metal source relative to the at least one plasma source.

A plasma atomization metal powder manufacturing process includes providing a heated metal source and contacting the heated metal source with the plasma of at least one plasma source under conditions effective for causing atomization of the heated metal source. The atomization may be carried out using a gas to metal ratio of less than about 20, thereby obtaining a raw metal powder having a 0-106 μm particle size distribution yield of at least 80%. The process may further include aligning the heated metal source with the plasma of at least one plasma source. An atomizing system may include an alignment system positioned upstream of the plasma source and adapted to adjust an orientation of the metal source relative to the at least one plasma source.

Disclosed herein are embodiments of systems and method for processing feedstock materials using microwave plasma processing. Specifically, the feedstock materials disclosed herein pertain to metal powders. Microwave plasma processing can be used to spheroidize the metal powders and form metal nitride or metal carbide powders. The stoichiometry of the metal nitride or metal carbide powders can be controlled by changing the composition of the plasma gas and the residence time of the feedstock materials during plasma processing.

Disclosed herein are embodiments of systems and method for processing feedstock materials using microwave plasma processing. Specifically, the feedstock materials disclosed herein pertain to metal powders. Microwave plasma processing can be used to spheroidize the metal powders and form metal nitride or metal carbide powders. The stoichiometry of the metal nitride or metal carbide powders can be controlled by changing the composition of the plasma gas and the residence time of the feedstock materials during plasma processing.

A titanium alloy additive manufacturing product contains 5.50 to 6.75 wt % of Al, 3.50 to 4.50 wt % of V, 0.20 wt % or less of 0, 0.40 wt % or less of Fe, 0.015 wt % or less of H, 0.08 wt % or less of C, 0.05 wt % or less of N, and inevitable impurities, in which a pore content is 0.05 number/mm.sup.2 or less, and a tensile strength is 855 MPa or more.

Systems, methods, and devices are disclosed for producing quantum particles (e.g., quantum dots) having a uniform size by vaporization of molten precursor droplets. More particularly, the present technology produces quantum dots by melting or liquefying solid and substantially pure precursor materials followed by production of uniformly sized droplets of molten precursor by use of a droplet maker into a microwave generated plasma torch.

Disclosed herein are embodiments of mechanically alloyed powder feedstock and methods for spheroidizing them using microwave plasma processing. The spheroidized powder can be used in metal injection molding processes, hot isostatic processing, and additive manufacturing. In some embodiments, mechanical milling, such as ball milling, can be used to prepare high entropy alloys for microwave plasma processing.