Provided is a cemented carbide including a first hard phase and a binder phase, the first hard phase consisting of WC, the binder phase being composed of either three elements which are Co, Ni and Cr or four elements which are Co, Ni, Cr and Mo, when a Co content is M1, a total content of Cr and Mo is M2, a total content of Ni, Cr, and Mo is M3, and a total content of Co, Ni, Cr, and Mo is M4, ratio M1/M4 being from 15 to 50%, ratio M2/M3 being from 15 to 40%, a ratio of an area of Cr/Mo-rich particles being lower than 1%, wherein the Cr/Mo-rich particles are particles constituting a region where a concentration of at least one of Cr and Mo is higher than the ratio of M1 to M4 in cross sectional elemental mapping of the cemented carbide.

Provided is a cemented carbide including a first hard phase and a binder phase, the first hard phase consisting of WC, the binder phase being composed of either three elements which are Co, Ni and Cr or four elements which are Co, Ni, Cr and Mo, when a Co content is M1, a total content of Cr and Mo is M2, a total content of Ni, Cr, and Mo is M3, and a total content of Co, Ni, Cr, and Mo is M4, ratio M1/M4 being from 15 to 50%, ratio M2/M3 being from 15 to 40%, a ratio of an area of Cr/Mo-rich particles being lower than 1%, wherein the Cr/Mo-rich particles are particles constituting a region where a concentration of at least one of Cr and Mo is higher than the ratio of M1 to M4 in cross sectional elemental mapping of the cemented carbide.

Methods and apparatuses for in situ synthesis of SiC, CMCs, and MMCs are disclosed, comprising: providing an apparatus having: an electromagnetic energy source; an autofocusing scanner; a powder system for SiC and one or more powders; a powder delivery system; a shielding gas comprising argon and/or nitrogen; and a computer coupled to and configured to control the energy source, scanner, powder system, and powder delivery system to deposit layers of the sample; programming the computer with specifications of the sample; using the computer to control electromagnetic radiation, mixing ratio, and powder deposition parameters based on the specifications of the sample; and using the autofocusing scanner to focus and scan the electromagnetic radiation onto the sample while the powders are concurrently deposited by the powder delivery system onto the sample to create a melting pool to deposit one or more layers onto the sample. Other embodiments are described and claimed.

Methods and apparatuses for in situ synthesis of SiC, CMCs, and MMCs are disclosed, comprising: providing an apparatus having: an electromagnetic energy source; an autofocusing scanner; a powder system for SiC and one or more powders; a powder delivery system; a shielding gas comprising argon and/or nitrogen; and a computer coupled to and configured to control the energy source, scanner, powder system, and powder delivery system to deposit layers of the sample; programming the computer with specifications of the sample; using the computer to control electromagnetic radiation, mixing ratio, and powder deposition parameters based on the specifications of the sample; and using the autofocusing scanner to focus and scan the electromagnetic radiation onto the sample while the powders are concurrently deposited by the powder delivery system onto the sample to create a melting pool to deposit one or more layers onto the sample. Other embodiments are described and claimed.

The invention relates to a PCD composite compact element comprising a PCD structure integrally bonded at an interface to a cemented carbide substrate; the PCD structure comprising coherently bonded diamond grains having a mean size no greater than 15 microns; the cemented carbide substrate comprising carbide particles dispersed in a metallic binder, the carbide particles comprising a carbide compound of a metal; wherein the ratio of the amount of metallic binder to the amount of the metal at points in the substrate deviates from a mean value by at most 20 percent of the mean value. The invention further relates to a method for making a PDC compact element comprising a PCD structure integrally bonded to a substrate formed of cemented carbide; the method including introducing a source of excess carbon to the substrate at a bonding surface of the substrate to form a carburised substrate; contacting an aggregated mass of diamond grains with the carburised substrate; and sintering the diamond grains in the presence of a solvent/catalyst material for diamond; wherein the mean size of the diamond grains in the aggregated mass is no greater than 30 microns.

The invention relates to a PCD composite compact element comprising a PCD structure integrally bonded at an interface to a cemented carbide substrate; the PCD structure comprising coherently bonded diamond grains having a mean size no greater than 15 microns; the cemented carbide substrate comprising carbide particles dispersed in a metallic binder, the carbide particles comprising a carbide compound of a metal; wherein the ratio of the amount of metallic binder to the amount of the metal at points in the substrate deviates from a mean value by at most 20 percent of the mean value. The invention further relates to a method for making a PDC compact element comprising a PCD structure integrally bonded to a substrate formed of cemented carbide; the method including introducing a source of excess carbon to the substrate at a bonding surface of the substrate to form a carburised substrate; contacting an aggregated mass of diamond grains with the carburised substrate; and sintering the diamond grains in the presence of a solvent/catalyst material for diamond; wherein the mean size of the diamond grains in the aggregated mass is no greater than 30 microns.

A cemented carbide comprising a first hard phase composed of tungsten carbide particles and a binder phase including Co, the cemented carbide having a ratio Nt/Na of 0.9 or more, where, in any surface or any cross section of the cemented carbide, a region in which there is a distance X of 5 nm or less between surfaces respectively of tungsten carbide particles adjacent to each other, the surfaces facing each other along a length L of 100 nm or more, is referred to as a WC/WC interface, and Na represents a total number of WC/WC interfaces and Nt represents a number of WC/WC interfaces having distance X of 1 nm or more and 5 nm or less and having therein an atomic percentage of Co higher than an average value of atomic percentages of Co in the tungsten carbide particles.

An embodiment of a PCD insert comprises an embodiment of a PCD element joined to a cemented carbide substrate at an interface. The PCD element has internal diamond surfaces defining interstices between them. The PCD element comprises a masked or passivated region and an unmasked or unpassivated region, the unmasked or unpassivated region defining a boundary with the substrate, the boundary being the interface. At least some of the internal diamond surfaces of the masked or passivated region contact a mask or passivation medium, and some or all of the interstices of the masked or passivated region and of the unmasked or unpassivated region are at least partially filled with an infiltrant material.

An embodiment of a PCD insert comprises an embodiment of a PCD element joined to a cemented carbide substrate at an interface. The PCD element has internal diamond surfaces defining interstices between them. The PCD element comprises a masked or passivated region and an unmasked or unpassivated region, the unmasked or unpassivated region defining a boundary with the substrate, the boundary being the interface. At least some of the internal diamond surfaces of the masked or passivated region contact a mask or passivation medium, and some or all of the interstices of the masked or passivated region and of the unmasked or unpassivated region are at least partially filled with an infiltrant material.

A super hard polycrystalline construction is disclosed as comprising a body of super hard material having a first fraction of super hard grains in a matrix of a second fraction of super hard grains. The average grain size of the first fraction is between around 1.5 to around 10 times the average grain size of the second fraction and the first fraction comprises around 5 vol % to around 30 vol % of the grains of super hard material in the body.