An electrically conductive tip member includes: an inner periphery portion including a Cu matrix phase and a second phase that is dispersed in the Cu matrix phase and contains a CuZr-based compound, the inner periphery portion having an alloy composition of Cu-xZr (where x is the atomic percentage of Zr and satisfies 0.5x16.7); and an outer periphery portion that is present on an outer circumferential side of the inner periphery portion, made of a metal containing Cu, and has higher electrical conductivity than the inner periphery portion.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170 C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170 C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

A metal matrix composite tool includes a body having hard composite portion that includes reinforcing particles dispersed in a binder material. At least some of the reinforcing particles comprise a monolithic particle structure including a core having irregular outer surface features integral with the core.

Provided is a cermet having improved toughness, the cermet including particles each of which has a complete solid-solution carbide of two or more metals selected, including titanium, from among Group IVa, Va, and VIa metals in the periodic table and has a core/rim structure composed of a core region and a rim region, and a binder composed of a metal, wherein the composition of the Group VIa metal in the core region is lower than the composition in the rim region, and the lattice constant in the rim region is larger than that in the core region.

There is provided a sintered bearing having high rotational accuracy and low rotational fluctuation. This bearing includes a bearing surface (4a), and is made of a sintered compact (4) produced by molding and sintering a raw material powder (10) containing a partially diffusion-alloyed powder (11) in which a copper powder (13) is partially diffused on a surface of an iron powder (12), a tin powder (14) as a low-melting-point metal powder, and a graphite powder as a solid lubricant powder. The sintered bearing has a radial crushing strength greater than or equal to 300 MPa.

There is provided a sintered bearing having high rotational accuracy and low rotational fluctuation. This bearing includes a bearing surface (4a), and is made of a sintered compact (4) produced by molding and sintering a raw material powder (10) containing a partially diffusion-alloyed powder (11) in which a copper powder (13) is partially diffused on a surface of an iron powder (12), a tin powder (14) as a low-melting-point metal powder, and a graphite powder as a solid lubricant powder. The sintered bearing has a radial crushing strength greater than or equal to 300 MPa.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170 C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170 C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

An R-T-B based permanent magnet includes R-T-B based compounds as main-phase crystal grains. R is a rare earth element. T is iron group element(s) essentially including Fe or Fe and Co. B is boron. A two-grain boundary is contained between the two adjacent main-phase crystal grains. An average grain size of the main-phase crystal grains is 0.9 m or more and 2.8 m or less. A thickness of the two-grain boundary is 5 nm or more and 200 nm or less.