Provided is a laser brazing system that can collectively control a robot and devices such as a laser oscillator and a wire feeding device and that can also collectively display the state of the robot and the state of the devices. A laser brazing system 1 that comprises a gas supply device 16, a wire feeding device 17, a laser oscillator 15, a robot 12 that supports a wire feeding nozzle 14 and a laser processing head 13 on the tip of an arm 121, and a robot control device 10 that controls the robot 12. In addition to the robot 12, the robot control device 10 of the laser brazing system 1 controls the wire feeding device 17, the gas supply device 16, and the laser oscillator 15 and has an operation panel 11 that includes a display unit 112 that can display the state of at least one of the wire feeding device 17, the gas supply device 16, and the laser oscillator 15.

The invention relates to a device (2) for working a surface (4) of a workpiece (6) by means of a laser beam (8), comprising a laser system (12) for providing the laser beam (8) and a plasma nozzle (14), which is designed to produce an atmospheric plasma jet (16), wherein the plasma nozzle (14) has a nozzle opening (24, 24′), from which a plasma jet (8) produced in the plasma nozzle (24, 24′) exits during operation, wherein the laser system (12) and the plasma nozzle (14) are arranged in relation to each other and designed in such a way that, during operation, the laser beam (8) exits from the nozzle opening (24, 24′) of the plasma nozzle (14) together with the plasma jet (16). The invention further relates to an assembly (100) having such a device and to a method for operating said device (2).

A laser reflow method includes a preparation step of preparing a workpiece including a board and semiconductor chips that each have bumps formed on one surface thereof and are placed on the board with the bumps interposed therebetween and a laser beam irradiation step of irradiating the semiconductor chips with a laser beam from a side of another surface opposite to the one surface, thereby reflowing bumps formed within an irradiated area of the workpiece. In the laser beam irradiation step, the irradiation with the laser beam is carried out while an irradiation range of the laser beam is changed in stages from a region including an outer peripheral portion of the irradiated area toward a region including a central portion of the irradiated area.

Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.

The present invention pertains to a brazing method and a brazing apparatus. This brazing method comprises: a brazing material supply step for supplying a brazing material to a to-be-welded part; and a laser irradiation step for irradiating the brazing material having been supplied to the to-be-welded part with a laser beam while moving the laser beam along a brazing direction to form a welding bead. In the laser irradiation step, a gas is injected toward an area to be injected with gas, which is an area encompassing the welding bead located rearward of a laser-irradiated portion of the brazing material in the brazing direction, from above said area or from a front side of said area in the brazing direction.

A brazing apparatus and method for brazing an anode target plate of an X-ray generator are disclosed. The brazing apparatus comprises: a vacuum part for providing, during brazing, a vacuum environment at least for a target plate main body formed of an alloy, a brazing material, and a substrate; an induction brazing part for applying an induction current to the target plate main body, the brazing material and the substrate in the vacuum part so as to achieve heating to a temperature higher than the melting point of the brazing material, causing the substrate to be welded to the target plate main body through melting of the brazing material and a resulting reaction; and a directional energy welding part for applying a generated directional energy beam to a position of lower temperature determined on the target plate main body to perform heating.

A system for reflowing a semiconductor workpiece including a stage, a first vacuum module and a second vacuum module, and an energy source is provided. The stage includes a base and a protrusion connected to the base, the stage is movable along a height direction of the stage relative to the semiconductor workpiece, the protrusion operably holds and heats the semiconductor workpiece, and the protrusion includes a first portion and a second portion surrounded by and spatially separated from the first portion. The first vacuum module and the second vacuum module respectively coupled to the first portion and the second portion of the protrusion, and the first vacuum module and the second vacuum module are operable to respectively apply a pressure to the first portion and the second portion. The energy source is disposed over the stage to heat the semiconductor workpiece held by the protrusion of the stage.

This brazing device is provided with: a brazing laser beam emission unit; and a removal laser beam emission unit that emits, toward foreign matters, a removal laser beam for removing the foreign matters adhered to the surface of a workpiece when joining the workpiece, wherein the emission direction of the removal laser beam in inclined, with respect to the emission direction of the brazing laser beam, at a predetermined angle in a direction in which the emission position of the removal laser beam approaches the emission position of the removal laser beam.

A laser processing system configured to provide a processing beam is provided. The laser processing system includes a laser, a beam splitting module, a first adjustment module, and a second adjustment module. The laser is configured to provide a laser beam. The beam splitting module is configured to split the laser beam into a first laser beam and a second laser beam. The first adjustment module is disposed on a transmission path of the first laser beam and configured to adjust the first laser beam to a central portion of the processing beam. The second adjustment module is disposed on a transmission path of the second laser beam and configured to adjust the second laser beam to an outer ring portion of the processing beam.

A method for bonding semiconductor substrates includes placing a die on a substrate and performing a heating process on the die and the substrate to bond the respective first connectors with the respective second connectors. Respective first connectors of a plurality of first connectors on the die contact respective second connectors of a plurality of second connectors on the substrate. The heating process includes placing a mask between a laser generator and the substrate and performing a laser shot. The mask includes a masking layer and a transparent layer. Portions of the masking layer are opaque. The laser passes through a first gap in the masking layer and through the transparent layer to heat a first portion of a top side of the die opposite the substrate.