A hybrid diffusion-brazing process and hybrid diffusion-brazed article are disclosed. The hybrid diffusion-brazing process includes providing a component having a temperature-tolerant region and a temperature-sensitive region, brazing a braze material to the temperature-tolerant region during a localized brazing cycle, then heating the component in a furnace during a diffusion cycle. The brazing and the heating diffusion-braze the braze material to the component, and the localized brazing cycle is performed independent of the diffusion cycle in the hybrid diffusion-brazing process. The hybrid diffusion-brazed article includes a component, and a braze material diffusion-brazed to the component with a filler material. The filler material has a melting temperature that is above a tolerance temperature of the component.

A laser soldering device for laser soldering an electric circuit of a heating portion of an electronic cigarette, the soldering device including a head having an emitting area where a laser beam is emitted and a feeding device to feed a heating portion of an electronic cigarette along a feed path, where the heating portion faces the head at the emitting area. A movement device is operatively connected to the head to move the head between first and second points of the electric circuit such that the laser beam is perpendicular to the respective surface to be soldered at the first and second points to form first and second connections, respectively. The head generates two distinct pulses of the laser beam at the first and second points.

A system for reflowing a semiconductor workpiece including a stage, a first vacuum module and a second vacuum module, and an energy source is provided. The stage includes a base and a protrusion connected to the base, the stage is movable along a height direction of the stage relative to the semiconductor workpiece, the protrusion operably holds and heats the semiconductor workpiece, and the protrusion includes a first portion and a second portion surrounded by and spatially separated from the first portion. The first vacuum module and the second vacuum module respectively coupled to the first portion and the second portion of the protrusion, and the first vacuum module and the second vacuum module are operable to respectively apply a pressure to the first portion and the second portion. The energy source is disposed over the stage to heat the semiconductor workpiece held by the protrusion of the stage.

The present invention relates to a reel-to-reel layer reflow method, which emits a uniformized laser beam, which can easily adjust the emission area, and which is for the purpose of improving productivity. An embodiment of the present invention provides a reel-to-reel layer reflow method comprising the steps of: a) transferring a substrate, which has been wound in a roll type, to one side while unwinding the same; b) forming a solder portion on the substrate; c) seating an emission target element on the solder portion and seating a non-emission target element on the substrate; d) surface-emitting a laser beam to the solder portion, on which the emission target element is seated, such that the emission target element is attached to the substrate; e) inspecting the substrate structure manufactured through said step d); and f) winding the substrate structure in a roll type.

Apparatus (20, 22) and a method for mechanically joining a steel sheet portion (28 or 32) of advanced high strength steel to a metallic sheet portion (30 or 34) is performed to a light-safe extent by a detector assembly (106) during the mechanical joining that may be clinching, clinch riveting, full-punch riveting or self-piercing riveting.

A method for producing a wired circuit board, including an insulating layer having a first through portion passing through in a thickness direction thereof and a first terminal portion having a second through portion overlapped with the first through portion when projected in the thickness direction, includes the steps of providing a first bonding material at one surface in the thickness direction of the first terminal portion and allowing the first bonding material to flow from the one surface in the thickness direction of the first terminal portion toward the other surface in the thickness direction thereof into the second through portion by allowing the first bonding material to flow.

One of a first metallic pipe containing a first metal as a main component and a second metallic pipe containing a second metal as a main component includes an expanded-diameter connecting part which is formed at an end part of the one metallic pipe. An inner diameter of the end part is greater than an inner diameter of an adjacent part that is adjacent to the end part. An intermetallic compound layer of the first and second metal is present at an interface of the first and second metal located between a brazing filler metal and the one or the other of the metallic pipes. A thickness of the intermetallic compound layer is configured such that the thickness of an end portion on the side of a base end is smaller than the thickness of an end portion on the side of an open end.

A material joining end effector generally includes a first arm, an optics assembly, a clamp, and a second arm. The first arm elongated along a longitudinal axis. The optics assembly is configured to focus an energy beam. The clamp is movably coupled to the first arm, the clamp being configured to move along a direction substantially parallel to the longitudinal axis. The second arm is rotationally coupled to the first arm, the second arm being configured to rotate relative to the first arm. The clamp is configured to removably couple the optics assembly to the first arm to allow the optics assembly to be decoupled from the first arm.

The present invention relates to a reel-to-reel layer reflow method, which emits a uniformized laser beam, which can easily adjust the emission area, and which is for the purpose of improving productivity. An embodiment of the present invention provides a reel-to-reel layer reflow method comprising the steps of: a) transferring a substrate, which has been wound in a roll type, to one side while unwinding the same; b) forming a solder portion on the substrate; c) seating an emission target element on the solder portion and seating a non-emission target element on the substrate; d) surface-emitting a laser beam to the solder portion, on which the emission target element is seated, such that the emission target element is attached to the substrate; e) inspecting the substrate structure manufactured through said step d); and f) winding the substrate structure in a roll type.

A system for laser bonding of flip chip, and more particularly, to a system for laser bonding of flip chip for bonding a flip chip-type semiconductor chip to a substrate by using a laser beam is provided. According to the system for laser bonding of flip chip of the present disclosure, by performing laser bonding on a substrate while pressurizing semiconductor chips, even semiconductor chips which are bent or likely to bend may be bonded to the substrate without causing poor contact of solder bumps.