Provided are a flip chip laser bonding apparatus and a flip chip laser bonding method, and more particularly, to an apparatus and method for flip chip laser bonding, in which a semiconductor chip in a flip chip form is bonded to a substrate by using a laser beam. According to the flip chip laser bonding apparatus and the flip chip laser bonding method, even a semiconductor chip that is bent or is likely to bend may also be bonded to a substrate without contact failure of solder bumps by bonding the semiconductor chip to the substrate by laser bonding while pressurizing the semiconductor chip.

A method of making a heat exchanger that includes providing a plurality of tubes. Each of the plurality of tubes has exterior cladding on an exterior surface, interior cladding on an interior surface, and a weld seam extending along the length of the plurality of tubes. The method further includes arranging the plurality of tubes such that each of the plurality of tubes is inserted into a corresponding header slot with the weld seams of each of the plurality of tubes oriented downward with respect to gravity, and brazing each of the plurality of tubes and the header after each tube has been inserted into a corresponding header slot. The brazing causes the interior cladding to melt and pool inside the plurality of tubes and along an interior side of the weld seams to form a clad cover portion encases debris generated while forming the weld seams.

There is provided a flux applying apparatus configured to jet and apply a flux to a target, whereby the flux applying apparatus is capable of rapidly collecting a surplus flux in a sub-tank and returning the same to the main tank for further jetting and applying. In particular, the flux applying apparatus is coupled to a control unit capable of estimating a flux amount trapped in the sub-tank on the basis of a time period for which the flux is to be jetted from the nozzle.

An electronic device is described wherein the electronic device comprises a substrate with a first conductive metal layer and a second conductive metal layer. A first microphonic noise reduction structure is in electrical contact with the first conductive metal layer wherein the first microphonic noise reduction layer comprises at least one of the group consisting of a compliant non-metallic layer and a shock absorbing conductor comprising offset mounting tabs with a space there between coupled with at least one stress relieving portion. An electronic component comprising a first external termination of a first polarity and a second external termination of a second polarity is integral to the electronic device and the first microphonic noise reduction structure and the first external termination are adhesively bonded by a transient liquid phase sintering adhesive.

A brazing sheet is provided for use in brazing performed in an inert gas atmosphere both using flux and without using flux. The brazing sheet includes an aluminum-based core, an intermediate material layered on the core and being composed of an aluminum alloy that contains Mg: 0.40-3.0 mass %, and a filler metal layered on the intermediate material and being composed of an aluminum alloy that contains Si: 6.0-13.0 mass % and Mg: less than 0.050 mass %. The brazing sheet satisfies the formula below where M [mass %] is the Mg content in the intermediate material, ti [m] is the thickness of the intermediate material, and tf [m] is the thickness of the filler metal:

tf10.15ln(Mti)+3.7.

A semiconductor fabrication apparatus has a transfer plate having a plurality of transfer pins to transfer a flux onto a plurality of lands on a semiconductor substrate, a holder movable with the transfer plate, to hold the transfer plate, a positioning mechanism to perform positioning of the holder so that the plurality of lands and the respective transfer pins contact each other; and a pitch adjuster to adjust a pitch of at least part of the plurality of transfer pins.

The present invention relates to an intermediate product for joining and coating by brazing comprising a base metal and a blend of boron and silicon, said base metal having a solidus temperature above 1040 C., and the intermediate product has at least partly a surface layer of the blend on the base metal, wherein the boron in the blend is selected from a boron source, and the silicon in the blend is selected from a silicon source, and wherein the blend comprises boron and silicon in a ratio of boron to silicon within a range from about 3:100 wt/wt to about 100:3 wt/wt. The present invention relates also to a stacked intermediate product, to an assembled intermediate product, to a method of brazing, to a brazed product, to a use of an intermediate product, to a pre-brazed product, to a blend and to paint.

A BGA package substrate includes a substrate, a resist formed over the substrate and includes an opening, a land formed over the substrate in the opening, and a solder ball fused to the land, wherein the resist includes a notch at an edge of the opening through which the land is exposed, the notch having a bottom at a position lower than a surface of the land.

A flux transfer tool includes a flux tray, a baseplate, a flux transfer head and a flexible member. The baseplate is disposed on the flux tray. The baseplate has a plurality of holes formed thereon. The flux transfer head is arranged corresponding to the flux tray and configured to move with respect to the flux tray. The flexible member is disposed on the flux transfer head. The flexible member faces the baseplate when the flux transfer head is located above the flux tray. When the holes are filled with a flux, the flux transfer head moves towards the flux tray, such that the flexible member adsorbs the flux from the holes.

A heat transfer tube includes: a tube body made of an extruded material of an aluminum alloy having a composition including: 0.3 mass % or more and less than 0.8 mass % of Mn; more than 0.1 mass % and less than 0.32 mass % of Si; 0.3 mass % or less of Fe; 0.06 mass % or more and 0.3 mass % or less of Ti; and Al balance including inevitable impurities, a ratio of a Mn content to a Si content, Mn %/Si %, exceeding 2.5; and a Zn-containing layer provided to an outer surface of the tube body.