A computer-numerically-controlled (CNC) machine is configured to (i) measure a power of a beam of electromagnetic energy at a location between a source of the electromagnetic energy and a destination in the CNC machine, the beam of electromagnetic energy traveling from the source to the destination being susceptible to one or more interferences, and the one or more interferences being capable of altering the power of the beam of electromagnetic energy by at least diverting, away from an intended path for the beam of electromagnetic energy, at least a portion of the beam of electromagnetic energy, (ii) detect, based at least on the measured power of the beam of electromagnetic energy being less than a threshold value, an interference of the beam of electromagnetic energy, and (iii) in response to detecting the interference of the beam of electromagnetic energy, perform one or more actions.

There is provided an optical axis adjustment jig including a flat parallel-surface plate having an upper surface and a lower surface with reflective films disposed respectively thereon, and an image capturing unit disposed beneath the flat parallel-surface plate for capturing an image of a laser beam applied thereto. The flat parallel-surface plate is made of a material that is transmissive of a wavelength of the laser beam. The laser beam is applied through the flat parallel-surface plate to the image capturing unit. A tilt of the optical axis of the laser beam is detected on the basis of the shape of the beam spot of the laser beam whose image has been captured by the image capturing unit.

A laser processing apparatus for producing a GaN wafer from a GaN ingot includes a laser beam irradiating unit configured to apply a laser beam having a wavelength capable of passing through the GaN ingot held by a chuck table. The laser beam irradiating unit includes a laser oscillator configured to oscillate the laser beam. The laser oscillator includes a seeder configured to oscillate a high-frequency pulsed laser, a thinning-out unit configured to thin out high-frequency pulses oscillated by the seeder at a predetermined repetition frequency, and generate one burst pulse with a plurality of high-frequency pulses as sub-pulses, and an amplifier configured to amplify the generated burst pulse.

A laser processing apparatus for producing a GaN wafer from a GaN ingot includes a laser beam irradiating unit configured to apply a laser beam having a wavelength capable of passing through the GaN ingot held by a chuck table. The laser beam irradiating unit includes a laser oscillator configured to oscillate the laser beam. The laser oscillator includes a seeder configured to oscillate a high-frequency pulsed laser, a thinning-out unit configured to thin out high-frequency pulses oscillated by the seeder at a predetermined repetition frequency, and generate one burst pulse with a plurality of high-frequency pulses as sub-pulses, and an amplifier configured to amplify the generated burst pulse.

Reliable coupling of a high-power laser beam into a liquid-jet in a liquid-jet guided laser system can be achieved with high lifetime performance of the nozzle and the protection window, through setting the parameters of the liquid-jet guided laser system according to an optimum relationship that links the focus point of the laser, the focus cone angle, the laser beam energy distribution profile and the nozzle geometry.

Reliable coupling of a high-power laser beam into a liquid-jet in a liquid-jet guided laser system can be achieved with high lifetime performance of the nozzle and the protection window, through setting the parameters of the liquid-jet guided laser system according to an optimum relationship that links the focus point of the laser, the focus cone angle, the laser beam energy distribution profile and the nozzle geometry.

A laser machining device which condenses a laser light inside a wafer and forms modified regions in a plurality of layers in the wafer, includes an infrared imaging optical system configured to face one surface of the wafer. In a case where a modified region positioned on a side of another surface opposite to the one surface of the wafer is defined as a first modified region and another modified region is defined as a second modified region, among the modified regions in the plurality of layers, the infrared imaging optical system has a focusing range that includes the first modified region and the another surface, and simultaneously images the first modified region and the another surface, and the second modified region is positioned outside the focusing range.

A method for welding a plurality of wire segment pairs is disclosed. Each wire segment pair has two adjacent wire segments, and each adjacent wire segment has a contact region where the wire segment is to be welded to the respective other wire segment. The wire segment pairs are successively guided between two elements of a pressing unit, and at a weld moment in which at least one of the wire segment pairs is located between the two elements. The pressing unit exerts a pressing force onto the wire segment pair such that the contact regions of the wire segments are pressed against each other. At each weld moment, laser radiation is irradiated onto the wire segment pair to which the pressing unit is exerting the pressing force, and the laser radiation is irradiated onto a region in which the contact regions are pressed against each other.

A unit vector calculating unit of a laser machining device obtains a unit vector based on respective current rotational positions of an A-axis and a B-axis. A movement command calculating unit, a speed command calculating unit, or a torque command calculating unit generates a command signal for maintaining a gap amount at a constant value, based on the unit vector, and the gap amount between a machining nozzle and a workpiece. With a servo control unit, on the basis of the command signal, an X-axis motor, a Y-axis motor, and a Z-axis motor are controlled, whereby the machining nozzle is moved relatively in three-dimensional directions with respect to the workpiece.

A unit vector calculating unit of a laser machining device obtains a unit vector based on respective current rotational positions of an A-axis and a B-axis. A movement command calculating unit, a speed command calculating unit, or a torque command calculating unit generates a command signal for maintaining a gap amount at a constant value, based on the unit vector, and the gap amount between a machining nozzle and a workpiece. With a servo control unit, on the basis of the command signal, an X-axis motor, a Y-axis motor, and a Z-axis motor are controlled, whereby the machining nozzle is moved relatively in three-dimensional directions with respect to the workpiece.