Patent classifications
B23K26/082
Machining condition adjustment apparatus and machine learning device
Disclosed is a machine learning device of a cutting condition adjustment apparatus including: a state observation section that observes, as state variables indicating a current state of an environment, cutting condition data indicating a laser cutting condition for a laser cutting and oblique rearward temperature rise data indicating a temperature rise value at an oblique rearward part of a cutting front of a workpiece, a determination data acquisition unit that acquires temperature rise value determination data for determining propriety of the temperature rise value during cutting based on the laser cutting condition for the laser cutting as determination data indicating a propriety determination result of the cutting of the workpiece, and a learning unit that learns the temperature rise value and adjustment of the laser cutting condition for the laser cutting in association with each other using the state variables and the determination data.
Machining condition adjustment apparatus and machine learning device
Disclosed is a machine learning device of a cutting condition adjustment apparatus including: a state observation section that observes, as state variables indicating a current state of an environment, cutting condition data indicating a laser cutting condition for a laser cutting and oblique rearward temperature rise data indicating a temperature rise value at an oblique rearward part of a cutting front of a workpiece, a determination data acquisition unit that acquires temperature rise value determination data for determining propriety of the temperature rise value during cutting based on the laser cutting condition for the laser cutting as determination data indicating a propriety determination result of the cutting of the workpiece, and a learning unit that learns the temperature rise value and adjustment of the laser cutting condition for the laser cutting in association with each other using the state variables and the determination data.
PATTERN FORMING APPARATUS FOR BASE MATERIAL, PATTERN FORMING METHOD, BASE MATERIAL, AND CONTAINER
A pattern forming apparatus for a base material includes a holding unit and a pattern forming unit. The holding unit is configured to hold a base material on which one of a protrusion shape portion and a recess shape portion is formed. The pattern forming unit is configured to form a pattern on the base material. The pattern is formed on at least one of the protrusion shape portion, the recess shape portion, a periphery of the recess shape portion, a periphery of the protrusion shape portion, a portion along the protrusion shape portion, and a portion along the recess shape portion.
Laser annealing apparatus and method of manufacturing substrate having poly-si layer using the same
Provided are a laser annealing apparatus and a method of manufacturing a substrate having a poly-Si layer using the laser annealing apparatus. The laser annealing apparatus includes a laser beam source that emits a linearly polarized laser beam, a polygon mirror that rotates around a rotation axis and reflects the laser beam emitted from the laser beam source, a first Kerr cell disposed on a laser beam path between the laser beam source and the polygon mirror, and a first optical element that directs the laser beam reflected by the polygon mirror toward an amorphous Si layer where the laser beam is irradiated upon the amorphous Si layer.
Laser annealing apparatus and method of manufacturing substrate having poly-si layer using the same
Provided are a laser annealing apparatus and a method of manufacturing a substrate having a poly-Si layer using the laser annealing apparatus. The laser annealing apparatus includes a laser beam source that emits a linearly polarized laser beam, a polygon mirror that rotates around a rotation axis and reflects the laser beam emitted from the laser beam source, a first Kerr cell disposed on a laser beam path between the laser beam source and the polygon mirror, and a first optical element that directs the laser beam reflected by the polygon mirror toward an amorphous Si layer where the laser beam is irradiated upon the amorphous Si layer.
Laser machining apparatus and laser machining method
A beam vibrating mechanism vibrates a laser beam in a parallel direction with a cutting advancing direction of a sheet metal. An amplitude amount of the laser beam is Qx, a radius of a first circular region having an area occupying 86% beam energy at a center side of total beam energy in a sectional area of the laser beam on a top surface of the sheet metal is rtop, and a radius of a second circular region having an area occupying 86% beam energy at a center side of total beam energy in a sectional area of the laser beam in a bottom surface of the sheet metal is rbottom. A calculation value Va is expressed by the expression: Va=(Qx+rtop+√{square root over (2)}×rbottom). When a standard deviation of the calculation value Va at a time of cutting sheet metals of a plurality of plate thicknesses is Vasd, a nozzle having a diameter of an opening between a minimum value obtained by 2Va−Vasd, and a maximum value obtained by 2.5 Va+Vasd is used as a nozzle attached to a machining head.
3-DIMENSIONAL SHAPING APPARATUS
A 3-dimensional shaping apparatus manufactures a 3-dimensional shaped object. The 3-dimensional shaping apparatus includes a beam irradiation unit, a spatial light modulator, a splitting optical system, and a scanning unit. The beam irradiation unit emits a light beam. The spatial light modulator spatially modulates the light beam emitted by the beam irradiation unit at least on the first axis. The splitting optical system includes at least one lens array having a plurality of lenses arranged along the first axis and splits the light beam modulated by the spatial light modulator into a plurality of light beams by the lens array. The scanning unit scans the shaping material with the plurality of light beams from the splitting optical system.
CONTROL DEVICE OF ANNEALING DEVICE, ANNEALING DEVICE, AND ANNEALING METHOD
The disclosure provides a control device of an annealing device, which is capable of further suppressing a temperature of a surface opposite to a laser irradiation surface from rising. A beam spot of a pulsed laser beam output from a laser light source on a surface of an annealed target is shaped into a long shape in one direction by a beam shaping optical element. A movement mechanism moves the beam spot with respect to the annealed target. The control device controls the laser light source and the movement mechanism and performs annealing by performing a sweep operation of moving the beam spot in a longitudinal direction of the beam spot with respect to the annealed target while causing the pulsed laser beam to be incident on the annealed target.
METHOD FOR MACHINING A MATERIAL
A method for machining a material using a pulsed laser includes introducing a sequence of laser pulses into the material for machining the material, and synchronizing a start of each sequence with a fundamental frequency of the laser. The sequence of laser pulses comprises at least two different sequence elements that are offset from one another in space and time. Each sequence element comprises an individual laser pulse, a specific succession of individual laser pulses, or a burst of laser pulses. Specific sequence element properties are impressed on each sequence element. The sequence element properties comprise a position of the laser focus of a respective sequence element. The position of the laser focus of each sequence element of the sequence is adapted for each sequence element.
ALUMINUM NITRIDE SUBSTRATE MANUFACTURING METHOD, ALUMINUM NITRIDE SUBSTRATE, AND METHOD OF REMOVING STRAIN LAYER INTRODUCED INTO ALUMINUM NITRIDE SUBSTRATE BY LASER PROCESSING
The problem to be solved by the present invention is to provide a novel technique that can remove a strained layer introduced into an aluminum nitride substrate. In order to solve this problem, the present aluminum nitride substrate manufacturing method involves a strained layer removal step for removing a strained layer in an aluminum nitride substrate by heat treatment of the aluminum nitride substrate in a nitrogen atmosphere. In this way, the present invention can remove a strained layer that has been introduced into an aluminum nitride substrate.