An apparatus and a method for producing strip wound tube products are disclosed. The apparatus includes a winding machine for winding a strip to a strip wound tube and a finishing machine for cutting off pieces of desired length from the strip wound tube and for connecting strip layers in the end sections of the strip wound tube product by way of an joining operation, the finishing machine having a mobile operating head and/or a force decoupling unit.

A label is attached to a base material in a container. The container includes patterns formed in a plurality of stages on the base material by laser irradiation. The patterns may include an aggregation of dots formed by the laser irradiation. The container may further include a first information region and a second information region. Information including a numeral, a symbol, or an image is made visible by the patterns in the first information region. The second information region is formed on the label. Information including a numeral, a symbol, or an image is made visible in the second information region.

A surface processing machine for processing a surface of a workpiece has a processing unit which includes a laser oscillator that emits a laser beam, a condenser that forms the laser beam which has been emitted by the laser oscillator, into a plurality of beams, a collimation lens that is arranged between the laser oscillator and the condenser and collimates the laser beam into parallel light, a beam intensity adjuster that is arranged between the condenser and the collimation lens and adjusts an intensity of the beams, and a rotating mechanism that rotates the condenser.

Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a body including an irradiation end, from which laser light is irradiated, a shaft coupled to the body, and a driver that supplies power to the shaft, the heating unit is swung about an axis of the shaft, and the controller moves the irradiation end of the heating unit to a target location on a substrate by adjusting a rotation angle of the heating unit and a rotation angle of the support unit.

To realize a laser irradiation apparatus by using which accuracy in processing a substrate can be improved. A laser irradiation apparatus according to an embodiment includes a laser irradiation unit configured to apply laser light to a substrate, a base part, and a conveyance stage configured to convey the substrate. The conveyance stage includes a stage configured to be movable over the base part, a base flange fixed over the stage, a substrate stage fixed to an upper end part of the base flange and configured so that the substrate is placed thereover, and a pusher pin for supporting the substrate, the pusher pin being configured to penetrate the substrate stage and to be movable up and down.

A laser soldering device for laser soldering an electric circuit of a heating portion of an electronic cigarette, the soldering device including a head having an emitting area where a laser beam is emitted and a feeding device to feed a heating portion of an electronic cigarette along a feed path, where the heating portion faces the head at the emitting area. A movement device is operatively connected to the head to move the head between first and second points of the electric circuit such that the laser beam is perpendicular to the respective surface to be soldered at the first and second points to form first and second connections, respectively. The head generates two distinct pulses of the laser beam at the first and second points.

A surface processing equipment using an energy beam including a measuring device, a gas source, an energy beam supply device, a multi-axis platform, and a processing device is provided. The measuring device measures a workpiece to obtain surface form information. The energy beam supply device receives a processing gas to form an energy beam. The energy beam supply device includes a rotating sleeve. Openings are on a bottom surface of the rotating sleeve. The rotating sleeve rotates along a rotation axis and supplies the energy beam from one of the openings to the workpiece. The processing device controls the gas source, the energy beam supply device, and the multi-axis platform according to the surface form information. Distances from each opening to the rotation axis are all different. The energy beam is formed into a beam shape or rings having different radii via a rotation of the energy beam supply device.

Systems and methods for etching complex patterns on an interior surface of a hollow object are disclosed. A method generally includes positioning a laser system within the hollow object with a focal point of the laser focused on the interior surface, and operating the laser system to form the complex pattern on the interior surface. Motion of the laser system and the hollow object is controlled by a motion control system configured to provide rotation and/or translation about a longitudinal axis of one or both of the hollow object and the laser system based on the complex pattern, and change a positional relationship between a reflector and a focusing lens of the laser system to accommodate a change in distance between the reflector and the interior surface of the hollow object.

Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a chamber providing a space in which a substrate is treated, a support unit supporting the substrate inside the chamber, a laser unit irradiating laser to an edge region of the substrate, a vision unit capturing the edge region of the substrate to measure an offset value of the substrate, and an adjustment unit adjusting an irradiation location of the laser based on the offset value of the substrate.

Disclosed herein is a wafer producing method for producing an SiC wafer from a single crystal SiC ingot. The wafer producing method includes a separation surface forming step of forming a separation surface composed of modified layers, cracks, and connection layers inside the ingot and a wafer separating step of separating a part of the ingot along the separation surface as an interface to thereby produce the wafer. The separation surface forming step includes a modified layer forming step of forming the modified layers and the cracks extending from the modified layers along a c-plane, and a connection layer forming step of forming the connection layers each connecting the cracks formed adjacent to each other in the thickness direction of the ingot.