An apparatus 300 for simulating a pulsed pressure induced cavitation technique (PPCT) from a pressurized working fluid (F) provides laboratory research and development for enhanced geothermal systems (EGS), oil, and gas wells. A pump 304 is configured to deliver a pressurized working fluid (F) to a control valve 306, which produces a pulsed pressure wave in a test chamber 308. The pulsed pressure wave parameters are defined by the pump 304 pressure and control valve 306 cycle rate. When a working fluid (F) and a rock specimen 312 are included in the apparatus, the pulsed pressure wave causes cavitation to occur at the surface of the specimen 312, thus initiating an extensive network of fracturing surfaces and micro fissures, which are examined by researchers.

An apparatus 300 for simulating a pulsed pressure induced cavitation technique (PPCT) from a pressurized working fluid (F) provides laboratory research and development for enhanced geothermal systems (EGS), oil, and gas wells. A pump 304 is configured to deliver a pressurized working fluid (F) to a control valve 306, which produces a pulsed pressure wave in a test chamber 308. The pulsed pressure wave parameters are defined by the pump 304 pressure and control valve 306 cycle rate. When a working fluid (F) and a rock specimen 312 are included in the apparatus, the pulsed pressure wave causes cavitation to occur at the surface of the specimen 312, thus initiating an extensive network of fracturing surfaces and micro fissures, which are examined by researchers.

Methods and apparatuses are disclosed for laser processing. A method includes providing a laser beam transparent to a workpiece. A cover, having a surface quality better than the workpiece's surface, is provided and spaced apart from the workpiece's surface. A fluid is provided between and in contact with the cover and the workpiece's surface. A laser beam is directed through the cover and fluid to the workpiece. An apparatus includes a cover spaced apart from a workpiece's surface and including a surface quality better than the workpiece's surface, a fluid dispenser for introducing fluid between and in contact with the cover and the workpiece's surface, and a laser system that directs a laser beam through the cover and fluid to the workpiece.

The present invention discloses an immersion laser fabrication method and system, the method comprises providing a substrate with a first shape; disposing the substrate in a carrier, and a liquid is injected into the carrier; providing a laser source to generate a laser beam; cutting the substrate along a second shape by the laser beam based on an application program in order to separate the substrate into a main substrate and a sub-substrate, the sub-substrate is detached from the substrate and sinks to the bottom of the carrier, or the substrate is drilled by the laser beam based on the application program in order to form a hole and a derivative in the substrate, the derivative is detached from the substrate and sinks to the bottom of the carrier; and obtaining the main substrate, the substrate with the hole, or the main substrate with the hole.

A laser processing apparatus includes a laser beam applying unit having a focusing unit applying a laser beam to a workpiece held on a chuck table, a feeding mechanism relatively moving the chuck table and the laser beam applying unit, and a chamber having a top wall connected to the focusing unit and a side wall connected to the top wall to define an enclosed space, the top wall having a transparent plate located directly below the focusing unit and allowing the pass of the laser beam applied from the focusing unit. The laser processing apparatus further includes a liquid supplying unit supplying a liquid into the enclosed space to make a condition that the enclosed space is filled with the liquid under a predetermined pressure.

In one embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) based on the material system AlInGaN with at least one active zone (22) for generating laser radiation. A heat sink (3) is thermally connected to the semiconductor layer sequence (2) and has a thermal resistance towards the semiconductor layer sequence (2). The semiconductor layer sequence (2) is divided into a plurality of emitter strips (4) and each emitter strip (4) has a width (b) of at most 0.3 mm in the direction perpendicular to a beam direction (R). The emitter strips (4) are arranged with a filling factor (FF) of less than or equal to 0.4. The filling factor (FF) is set such that laser radiation having a maximum optical output power (P) can be generated during operation.

In one embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) based on the material system AlInGaN with at least one active zone (22) for generating laser radiation. A heat sink (3) is thermally connected to the semiconductor layer sequence (2) and has a thermal resistance towards the semiconductor layer sequence (2). The semiconductor layer sequence (2) is divided into a plurality of emitter strips (4) and each emitter strip (4) has a width (b) of at most 0.3 mm in the direction perpendicular to a beam direction (R). The emitter strips (4) are arranged with a filling factor (FF) of less than or equal to 0.4. The filling factor (FF) is set such that laser radiation having a maximum optical output power (P) can be generated during operation.

A system for finishing a surface of a workpiece. The system includes a laser unit configured to emit a laser radiation. The system further includes an attenuator disposed within the laser unit and configured to adjust optical parameters of the laser radiation. The system further includes a cavitation chamber storing a liquid medium. The workpiece is mounted within the cavitation chamber and is in contact with the liquid medium. The system further includes at least one lens configured to focus at least a portion of the laser radiation and transmit at least one laser beam towards the workpiece.

A system for treating a target by laser shock in a regime of confinement in a liquid, the system includes a pulsed laser generating a beam having a pulse duration of between 1 ns and 30 ns and a wavelength, a concentrating optical device having a focal length and configured to concentrate the beam on the surface of the target, the incident laser beam on the concentrating device having a diameter, a tank filled with the liquid having a refractive index n, a desired value of the diameter of the beam on a surface of the target being predetermined and named Dst, a thickness of liquid passed through by the beam before reaching the surface of the target being chosen such that a laser intensity on the surface of the liquid (Isl) is less than or equal to a laser intensity on the surface of the target (Ist) divided by 2.

A system for treating a target by laser shock in a regime of confinement in a liquid, the system includes a pulsed laser generating a beam having a pulse duration of between 1 ns and 30 ns and a wavelength, a concentrating optical device having a focal length and configured to concentrate the beam on the surface of the target, the incident laser beam on the concentrating device having a diameter, a tank filled with the liquid having a refractive index n, a desired value of the diameter of the beam on a surface of the target being predetermined and named Dst, a thickness of liquid passed through by the beam before reaching the surface of the target being chosen such that a laser intensity on the surface of the liquid (Isl) is less than or equal to a laser intensity on the surface of the target (Ist) divided by 2.