Embodiments disclosed herein generally relate to modifying a material's surface chemistry and surface profile using a pulsed laser. In embodiments, a system comprises: a material, the material including a surface portion having a surface chemistry; an enclosure, the enclosure containing a gaseous mixture having a non-atmospheric composition; and a pulsed laser configured to emit at least one laser pulse, the at least one laser pulse being directed to pass through the gaseous mixture onto the surface portion thereby modifying the surface chemistry of the surface portion.

The invention relates to an apparatus for manufacturing a semiconductor device comprising a reaction chamber comprising a substrate holder for holding a substrate; and, a heater for heating the substrate. The heater may comprise a vertical cavity surface emitting laser constructed and arranged to emit a radiation beam to a substrate held by the substrate holder to heat the substrate.

The invention relates to an apparatus for manufacturing a semiconductor device comprising a reaction chamber comprising a substrate holder for holding a substrate; and, a heater for heating the substrate. The heater may comprise a vertical cavity surface emitting laser constructed and arranged to emit a radiation beam to a substrate held by the substrate holder to heat the substrate.

A core-shell structured alloy powder for additive manufacturing, an additively manufactured precipitation dispersion strengthened alloy component, and a method for additively manufacturing the component are provided. The alloy powder comprises a plurality of particles, where one or more of the plurality of particles comprise an alloy powder core and an oxygen or nitrogen rich shell disposed on at least a portion of the alloy powder core. The alloy powder core comprises an alloy constituent matrix with one or more reactive elements, where the reactive elements are configured to react with oxygen, nitrogen, or both. The alloy constituent matrix comprises stainless steel, an iron based alloy, a nickel based alloy, a nickel-iron based alloy, a cobalt based alloy, a copper based alloy, an aluminum based alloy, a titanium based alloy, or combinations thereof. The alloy constituent matrix comprises reactive elements present in a range from about 0.01 weight percent to 10 weight percent of a total weight of the alloy powder.

The disclosure relates to a process for treating a structure, the structure comprising, from its back side to its front side, a carrier substrate, an insulating layer and a useful layer, the useful layer having a free surface, the structure being placed in an atmosphere containing chemical species, the chemical species being capable of reacting chemically with the useful layer. This treatment process is noteworthy in that the useful layer is heated by a pulsed laser beam, the beam sweeping the free surface, the wavelength of the beam differing by, at most, plus or minus 15 nm from a central wavelength, the central wavelength being chosen so that the sensitivity of the reflectivity of the structure relative to the insulating layer is zero.

Disclosed is a method for producing a carbide derived carbon layer with a dimple pattern. The method includes forming a dimple pattern on the surface of a carbide ceramic material and forming a carbide derived carbon layer thereon. Also disclosed is a carbide derived carbon layer with a dimple pattern produced by the method. The carbide derived carbon layer with dimple pattern has high wear resistance, good adhesion to a machine part, and excellent frictional characteristics. The carbide derived carbon layer can be applied to various fields, such as coating of carbide coated and carbide materials. Particularly, the carbide derived carbon layer is suitable for coating of machine parts (e.g., sliding parts, mechanical seals, piston rings, and compressor vanes) where excellent mechanical properties are needed.

The present invention generally describes apparatuses and methods used to perform an annealing process on desired regions of a substrate. In one embodiment, pulses of electromagnetic energy are delivered to a substrate using a flash lamp or laser apparatus. The pulses may be from about 1 nsec to about 10 msec long, and each pulse has less energy than that required to melt the substrate material. The interval between pulses is generally long enough to allow the energy imparted by each pulse to dissipate completely. Thus, each pulse completes a micro-anneal cycle. The pulses may be delivered to the entire substrate at once, or to portions of the substrate at a time. Further embodiments provide an apparatus for powering a radiation assembly, and apparatuses for detecting the effect of pulses on a substrate.

Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

The present invention generally relates to methods and apparatuses adapted to perform additive manufacturing (AM) processes and the resulting products made therefrom, and specifically, to AM processes that employ an energy beam to selectively fuse a base material to produce an object. More particularly, the invention relates to methods and systems that use reactive fluids to actively manipulate the surface chemistry of the base material prior to, during and/or after the AM process.

A method for treating a raw-material powder includes forming a layer of the raw-material powder and removing oxide film formed on a surface of the raw-material powder from which the layer has been formed.