B23K26/32

SEMICONDUCTOR MODULE AND METHOD FOR FABRICATING THE SAME
20220384321 · 2022-12-01 ·

Provided is a semiconductor module including: a layered substrate on which a semiconductor chip is provided; and a connection terminal including a connection portion connected to the layered substrate, wherein the connection portion includes at least one ultrasonic connection section, and at least one laser-welded section, at least a portion of which is provided at a location other than a location at which the ultrasonic connection section is provided. The at least one ultrasonic connection section may be provided to be closer to the leading end of the connection portion than the at least one laser-welded section is.

Laser welding method

In a laser welding method, generation of relatively large blow holes in a welding part is prevented while decrease in productivity is reduced. The laser welding method for lap welding, using a laser beam LB, of a plurality of metal plates and including an aluminum alloy cast plate includes: a melting path of scanning and irradiating circularly a superimposed part of the aluminum alloy plate and the aluminum alloy cast plate with a first laser beam LB1 to form a molten pool of the molten aluminum alloy plate and the molten aluminum alloy cast plate; and a stirring path of scanning and irradiating circularly the molten pool with a second laser beam LB2 having a scanning speed V.sub.2 faster than a scanning speed V.sub.1 of the first laser beam LB1 to stir the molten pool.

Laser welding method

In a laser welding method, generation of relatively large blow holes in a welding part is prevented while decrease in productivity is reduced. The laser welding method for lap welding, using a laser beam LB, of a plurality of metal plates and including an aluminum alloy cast plate includes: a melting path of scanning and irradiating circularly a superimposed part of the aluminum alloy plate and the aluminum alloy cast plate with a first laser beam LB1 to form a molten pool of the molten aluminum alloy plate and the molten aluminum alloy cast plate; and a stirring path of scanning and irradiating circularly the molten pool with a second laser beam LB2 having a scanning speed V.sub.2 faster than a scanning speed V.sub.1 of the first laser beam LB1 to stir the molten pool.

DOUBLE-WALL SPIRAL WELDED PIPE AND MANUFACTURING METHOD THEREOF
20220373109 · 2022-11-24 ·

A double-wall spiral welded pipe includes a first steel belt layer and a second steel belt layer which have equal widths, are arranged in parallel and align with each other; at least two supporting steel bars perpendicular to the first steel belt layer and the second steel belt layer are arranged between the first steel belt layer and the second steel belt layer; the supporting steel bars are arranged on end parts of two sides of the first steel belt layer and the second steel belt layer and extend together with the first steel belt layer and the second steel belt layer; and the first steel belt layer, the second steel belt layer and the supporting steel bars on the end parts of the two sides are mutually welded to form a double-layer composite steel belt with a rectangular section in an extending direction.

Method for joining a modular hot gas component using welding and high-temperature soldering, and joined component

A method for joining a modular hot gas component by welding and high-temperature soldering. In order to optimally join high-temperature components, a first component is plugged into pins of a second component, a soldering material is placed between the two components, and the pins of the second component are welded to the first component.

PRODUCTION METHOD FOR WELDING A COPPER CONDUCTOR TO A WORKPIECE, WORKPIECE, AND VEHICLE
20220355415 · 2022-11-10 ·

A production method for welding a copper conductor to an electrical contact element of a workpiece for electrical contacting. The contact element has a first copper alloy, and the method has the following method steps: mechanical contacting between the copper conductor and the contact element at a join of the contact element, the welding of the copper conductor to the contact element being carried out with the aid of a focused laser beam, the laser beam having a wavelength of less than or equal to 0.6 μm, and a welded seam is produced which has a welding depth that is greater than or equal to 100 μm.

PRODUCTION METHOD FOR WELDING A COPPER CONDUCTOR TO A WORKPIECE, WORKPIECE, AND VEHICLE
20220355415 · 2022-11-10 ·

A production method for welding a copper conductor to an electrical contact element of a workpiece for electrical contacting. The contact element has a first copper alloy, and the method has the following method steps: mechanical contacting between the copper conductor and the contact element at a join of the contact element, the welding of the copper conductor to the contact element being carried out with the aid of a focused laser beam, the laser beam having a wavelength of less than or equal to 0.6 μm, and a welded seam is produced which has a welding depth that is greater than or equal to 100 μm.

THREE-DIMENSIONAL PRINTING

The present disclosure provides three-dimensional (3D) objects, 3D printing processes, as well as methods, apparatuses and systems for the production of a 3D object. Methods, apparatuses and systems of the present disclosure may reduce or eliminate the need for auxiliary supports. The present disclosure provides three dimensional (3D) objects printed utilizing the printing processes, methods, apparatuses and systems described herein.

THREE-DIMENSIONAL PRINTING

The present disclosure provides three-dimensional (3D) objects, 3D printing processes, as well as methods, apparatuses and systems for the production of a 3D object. Methods, apparatuses and systems of the present disclosure may reduce or eliminate the need for auxiliary supports. The present disclosure provides three dimensional (3D) objects printed utilizing the printing processes, methods, apparatuses and systems described herein.

Room temperature glass-to-glass, glass-to-plastic and glass-to-ceramic/semiconductor bonding

A process for room temperature substrate bonding employs a first substrate substantially transparent to a laser wavelength is selected. A second substrate for mating at an interface with the first substrate is then selected. A transmissivity change at the interface is created and the first and second substrates are mated at the interface. The first substrate is then irradiated with a laser of the transparency wavelength substantially focused at the interface and a localized high temperature at the interface from energy supplied by the laser is created. The first and second substrates immediately adjacent the interface are softened with diffusion across the interface to fuse the substrates.