This disclosure describes various methods and apparatus for characterizing an additive manufacturing process. A method for characterizing the additive manufacturing process can include generating scans of an energy source across a build plane; measuring an amount of energy radiated from the build plane during each of the scans using an optical sensing system that monitors two discrete wavelengths associated with a blackbody radiation curve of the layer of powder; determining temperature variations for an area of the build plane traversed by the scans based upon a ratio of sensor readings taken at the two discrete wavelengths; determining that the temperature variations are outside a threshold range of values; and thereafter, adjusting subsequent scans of the energy source across or proximate the area of the build plane.

This disclosure describes various methods and apparatus for characterizing an additive manufacturing process. A method for characterizing the additive manufacturing process can include generating scans of an energy source across a build plane; measuring an amount of energy radiated from the build plane during each of the scans using an optical sensing system that monitors two discrete wavelengths associated with a blackbody radiation curve of the layer of powder; determining temperature variations for an area of the build plane traversed by the scans based upon a ratio of sensor readings taken at the two discrete wavelengths; determining that the temperature variations are outside a threshold range of values; and thereafter, adjusting subsequent scans of the energy source across or proximate the area of the build plane.

A control device for controlling an annealing apparatus that performs laser annealing by causing a laser beam to be incident on a surface of a semiconductor wafer and moving a beam spot of the laser beam on the surface of the semiconductor wafer, the control device making a sweep speed of the beam spot of the laser beam faster than twice a value obtained by dividing a thermal diffusivity of the semiconductor wafer by a thickness of the semiconductor wafer.

A laser crystallization device includes: a first solid-state laser generator which generates a first solid-state laser having a first energy intensity; a second solid-state laser generator which generates a second solid-state laser having a second energy intensity lower than the first energy intensity; and a third solid-state laser generator which generates a third solid-state laser having a third energy intensity lower than the first energy intensity.

A substrate holder for a lithographic apparatus has a main body having a thin-film stack provided on a surface thereof. The thin-film stack forms an electronic or electric component such as an electrode, a sensor, a heater, a transistor or a logic device, and has a top isolation layer. A plurality of burls to support a substrate are formed on the thin-film stack or in apertures of the thin-film stack.

A substrate holder for a lithographic apparatus has a main body having a thin-film stack provided on a surface thereof. The thin-film stack forms an electronic or electric component such as an electrode, a sensor, a heater, a transistor or a logic device, and has a top isolation layer. A plurality of burls to support a substrate are formed on the thin-film stack or in apertures of the thin-film stack.

A three-dimensional structure is formed when layers of a material are deposited onto a substrate and scanned with a high energy beam to at least partially melt each layer of the material. Upon scanning the layers at predetermined locations a tube device having a first tube and a second tube intersected with the first tube is formed.

A three-dimensional structure is formed when layers of a material are deposited onto a substrate and scanned with a high energy beam to at least partially melt each layer of the material. Upon scanning the layers at predetermined locations a tube device having a first tube and a second tube intersected with the first tube is formed.

A multi-tubular beam for a vehicle, such as a vehicle structure or a bumper reinforcement, includes an elongated beam formed with a metal sheet. The metal sheet has a central section and outer sections extending along a length of the metal sheet. The outer sections are disposed in opposing directions from the outer edges of the central section to provide adjacent first and second tubular portions. The central section forms a common center wall between the adjacent first and second tubular portions. A first edge portion of the metal sheet is disposed along and in parallel alignment with the center wall. The first edge portion is attached to the center wall at a first weld joint to form the first tubular portion. The first weld joint includes a weld material that extends through a thickness of the center wall and into a thickness of the first edge portion.

A Conductor on Molded Barrel (COMB) magnet assembly optimized for High Temperature Superconducting (HTS) materials. The magnet assembly comprises a magnetic coil(s) carried by a conductor support structure and configured in cosine-theta geometry. Created using additive manufacturing, the conductor support structure features a continuous cable channel that fittedly carries and positions elongated straight portion(s) of the magnetic coil(s) parallel to a magnetic axis. The conductor support structure may be cylindrically shaped and longitudinally bored, with the continuous cable channel comprising an outer channel portion (distal on the cylinder) and an inner channel portion (proximal on the cylinder). A transition hole that joins the outer channel portion and the inner channel portion allows a single magnetic coil to be wound along both the outer and inner surfaces of the conductor support structure. The conductor support structure may be fabricated as longitudinally-symmetrical halves, and secured for operation using azimuthal and/or midplane shims.