B23K26/359

HYBRID WAFER DICING APPROACH USING A ROTATING BEAM LASER SCRIBING PROCESS AND PLASMA ETCH PROCESS

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a rotating laser beam laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

Processing 3D shaped transparent brittle substrate

Methods are provided for laser processing arbitrary shapes of molded 3D thin transparent brittle parts from substrates with particular interest in substrates formed from strengthened or non-strengthened Corning Gorilla® glass (all codes). The developed laser methods can be tailored for manual separation of the parts from the panel or full laser separation by thermal stressing the desired profile. Methods can be used to form 3D surfaces with small radii of curvature. The method involves the utilization of an ultra-short pulse laser that may be optionally followed by a CO.sub.2 laser for fully automated separation.

A METHOD FOR MANUFACTURING DECORATIVE PARTS, AND DECORATIVE PARTS
20170266690 · 2017-09-21 ·

This invention provides a method for manufacturing a decorative-part that makes it surely and easily possible to provide fine hairline-patterns that are similar to real texture by a laser-drawing process. By the method for manufacturing the decorative part, a laser-drawing process is done onto the coating-film 21 that has been formed on the surface 13 of the three-dimensional part-material 12. In this process a laser-processed groove-group 23 consists of a number of laser-processed grooves 24, 25, thus providing the hairline-pattern 22 on the coating-film 21. The laser processed groove-group 23 consists of various types of arc-like laser-processed grooves 24, 25 that comprise different curvature radii R of 1,000 mm or more. The arc-like laser-processed grooves 24, 25 are arranged extending appropriately in the same direction and of which each groove crosses at three degrees or less in irregular overlaps that show the line of each groove being wider than any other part.

A METHOD FOR MANUFACTURING DECORATIVE PARTS, AND DECORATIVE PARTS
20170266690 · 2017-09-21 ·

This invention provides a method for manufacturing a decorative-part that makes it surely and easily possible to provide fine hairline-patterns that are similar to real texture by a laser-drawing process. By the method for manufacturing the decorative part, a laser-drawing process is done onto the coating-film 21 that has been formed on the surface 13 of the three-dimensional part-material 12. In this process a laser-processed groove-group 23 consists of a number of laser-processed grooves 24, 25, thus providing the hairline-pattern 22 on the coating-film 21. The laser processed groove-group 23 consists of various types of arc-like laser-processed grooves 24, 25 that comprise different curvature radii R of 1,000 mm or more. The arc-like laser-processed grooves 24, 25 are arranged extending appropriately in the same direction and of which each groove crosses at three degrees or less in irregular overlaps that show the line of each groove being wider than any other part.

Method and Apparatus for Manufacturing an Absorbent Article Including an Ultra Short Pulse Laser Source
20170266057 · 2017-09-21 ·

The present disclosure relates to methods and apparatuses for assembling absorbent articles, and more particularly, methods and apparatuses for imparting a line of weakness into one or more layers of an advancing substrate and separating the substrate along the line of weakness to form a separation edge. The advancing substrate may be a belt assembly including an outer layer, an inner layer, and one or more elastic strands disposed between the outer layer and the inner layer. The belt assembly may be rotated on a process member about a longitudinal axis of rotation. The process member may advance the belt assembly to one or more ultra short pulse laser sources. The ultra short pulse laser source imparts a line of weakness into the belt assembly. A trim removal member may be used to separate the line of weakness forming a trim portion and a separation edge.

Method and Apparatus for Manufacturing an Absorbent Article Including an Ultra Short Pulse Laser Source
20170266057 · 2017-09-21 ·

The present disclosure relates to methods and apparatuses for assembling absorbent articles, and more particularly, methods and apparatuses for imparting a line of weakness into one or more layers of an advancing substrate and separating the substrate along the line of weakness to form a separation edge. The advancing substrate may be a belt assembly including an outer layer, an inner layer, and one or more elastic strands disposed between the outer layer and the inner layer. The belt assembly may be rotated on a process member about a longitudinal axis of rotation. The process member may advance the belt assembly to one or more ultra short pulse laser sources. The ultra short pulse laser source imparts a line of weakness into the belt assembly. A trim removal member may be used to separate the line of weakness forming a trim portion and a separation edge.

MANUFACTURING PROCESS OF ELEMENT CHIP USING LASER GROOVING AND PLASMA-ETCHING
20210407855 · 2021-12-30 ·

A manufacturing process of an element chip comprises a preparing step for preparing a substrate having first and second sides opposed to each other, the substrate containing a semiconductor layer, a wiring layer and a resin layer formed on the first side, and the substrate including a plurality of dicing regions and element regions defined by the dicing regions. Also, the manufacturing process comprises a laser grooving step for irradiating a laser beam onto the dicing regions to form grooves so as to expose the semiconductor layer along the dicing regions. Further, the manufacturing process comprises a dicing step for plasma-etching the semiconductor layer along the dicing regions through the second side to divide the substrate into a plurality of the element chips. The laser grooving step includes a melting step for melting a surface of the semiconductor layer exposed along the dicing regions.

Comparing method and laser processing apparatus

A comparing method includes a processing trace forming step of positioning a condenser at a reference height and a plurality of heights by moving the condenser, and forming a plurality of processing traces in one surface of a workpiece by irradiating different positions of the one surface with a laser beam according to each of the heights, a calculating step of calculating at least one of an average of widths in a plurality of predetermined directions of each of the plurality of processing traces and an area ratio of each of the plurality of processing traces to a circle of a predetermined diameter by analyzing an image of the plurality of processing traces by an image analyzing section, and a comparing step of quantitatively comparing deviations of the plurality of processing traces from a predetermined shape on the basis of at least one of the average and the area ratio.

Singulation of optical waveguide materials

Methods for singulating an optical waveguide material at a contour include directing a first laser beam onto a first side of the optical waveguide material to generate a first group of perforations in the optical waveguide material. A second laser beam is directed onto a second side of the optical waveguide material to generate a second group of perforations in the optical waveguide material. The second side is opposite the first side. The first group of perforations and the second group of perforations define a perforation zone at the contour. A third laser beam is directed at the perforation zone to singulate the optical waveguide material at the perforation zone.

Singulation of optical waveguide materials

Methods for singulating an optical waveguide material at a contour include directing a first laser beam onto a first side of the optical waveguide material to generate a first group of perforations in the optical waveguide material. A second laser beam is directed onto a second side of the optical waveguide material to generate a second group of perforations in the optical waveguide material. The second side is opposite the first side. The first group of perforations and the second group of perforations define a perforation zone at the contour. A third laser beam is directed at the perforation zone to singulate the optical waveguide material at the perforation zone.