Provided that is a marking machine for applying markings to an ingot having separating layers formed at a depth corresponding to a thickness of a wafer to be produced. The marking machine includes a reading unit configured to read the ingot information formed on the ingot, a control unit having a storage section configured to store the ingot information read by the reading unit, and a marking unit configured to mark, based on the ingot information stored in the storage section, information that includes the ingot information, to the wafer to be produced.

Provided that is a marking machine for applying markings to an ingot having separating layers formed at a depth corresponding to a thickness of a wafer to be produced. The marking machine includes a reading unit configured to read the ingot information formed on the ingot, a control unit having a storage section configured to store the ingot information read by the reading unit, and a marking unit configured to mark, based on the ingot information stored in the storage section, information that includes the ingot information, to the wafer to be produced.

There is provided a peeling apparatus including an ingot holding unit that has a holding surface for holding an ingot, a wafer holding unit that is capable of approaching and separating from the ingot holding unit and has a holding surface for holding under suction a wafer to be produced, and a cleaning brush that cleans peel-off surfaces at which the wafer to be produced has been peeled off from the ingot and thereby removes peeling swarf.

There is provided a peeling apparatus including an ingot holding unit that has a holding surface for holding an ingot, a wafer holding unit that is capable of approaching and separating from the ingot holding unit and has a holding surface for holding under suction a wafer to be produced, and a cleaning brush that cleans peel-off surfaces at which the wafer to be produced has been peeled off from the ingot and thereby removes peeling swarf.

A method for separating a temporarily bonded substrate stack by bombardment of a joining layer of the substrate stack by means of laser beams emitted by a laser, characterised in that laser beams of the laser reflected and/or transmitted at the temporarily bonded substrate stack are detected during the bombardment of the joining layer with the laser beams. The invention also relates to a corresponding device.

A method for separating a temporarily bonded substrate stack by bombardment of a joining layer of the substrate stack by means of laser beams emitted by a laser, characterised in that laser beams of the laser reflected and/or transmitted at the temporarily bonded substrate stack are detected during the bombardment of the joining layer with the laser beams. The invention also relates to a corresponding device.

Process for producing semiconductor devices in a substrate, comprising: photolithography of a pattern of a reticle onto a portion of the substrate, defining first elements of the semiconductor devices, an exposure of the pattern being repeated a plurality of times in order to define all of the devices, photolithography of a pattern of an etch mask over all of the substrate, etching photolithography patterns into one portion of the thickness of the substrate, wherein first dicing lanes encircling the devices are included in the pattern of the etch mask and/or of the reticle, and the photolithography of the etch mask defines second dicing lanes defined by predetermined fracture lines of the edges of the substrate, and furthermore comprising the implementation of a step of irradiating the substrate with a laser beam through the first and second dicing lanes.

Process for producing semiconductor devices in a substrate, comprising: photolithography of a pattern of a reticle onto a portion of the substrate, defining first elements of the semiconductor devices, an exposure of the pattern being repeated a plurality of times in order to define all of the devices, photolithography of a pattern of an etch mask over all of the substrate, etching photolithography patterns into one portion of the thickness of the substrate, wherein first dicing lanes encircling the devices are included in the pattern of the etch mask and/or of the reticle, and the photolithography of the etch mask defines second dicing lanes defined by predetermined fracture lines of the edges of the substrate, and furthermore comprising the implementation of a step of irradiating the substrate with a laser beam through the first and second dicing lanes.

A substrate processing method of processing a combined substrate in which a first substrate and a second substrate are bonded to each other includes forming a peripheral modification layer along a boundary between a peripheral portion of the first substrate as a removing target and a central portion of the first substrate; forming a non-bonding region in which bonding strength between the first substrate and the second substrate in the peripheral portion is reduced; and removing the peripheral portion starting from the peripheral modification layer. A first crack is developed from the peripheral modification layer toward the second substrate. The peripheral modification layer is formed such that a lower end of the first crack is located above the non-bonding region and an inner end of the non-bonding region is located at a diametrically outer side than the first crack.

A substrate processing method of processing a combined substrate in which a first substrate and a second substrate are bonded to each other includes forming a peripheral modification layer along a boundary between a peripheral portion of the first substrate as a removing target and a central portion of the first substrate; forming a non-bonding region in which bonding strength between the first substrate and the second substrate in the peripheral portion is reduced; and removing the peripheral portion starting from the peripheral modification layer. A first crack is developed from the peripheral modification layer toward the second substrate. The peripheral modification layer is formed such that a lower end of the first crack is located above the non-bonding region and an inner end of the non-bonding region is located at a diametrically outer side than the first crack.