A method of preparing a workpiece for laser bonding includes positioning a first metal gasket on a fixture; positioning a first surface of a substrate on the first metal gasket, wherein the fixture, the first metal gasket and the first surface of the substrate define a first cavity; applying a vacuum to the first cavity, the vacuum pulling the substrate against the first metal gasket; and directing a laser at an interface of the first metal gasket and the first surface of the substrate, wherein the laser forms a bond between the first metal gasket and the first surface of the substrate.

A method of preparing a workpiece for laser bonding includes positioning a first metal gasket on a fixture; positioning a first surface of a substrate on the first metal gasket, wherein the fixture, the first metal gasket and the first surface of the substrate define a first cavity; applying a vacuum to the first cavity, the vacuum pulling the substrate against the first metal gasket; and directing a laser at an interface of the first metal gasket and the first surface of the substrate, wherein the laser forms a bond between the first metal gasket and the first surface of the substrate.

Laser welding of a first metal substrate having a first planar surface and a second planar surface disposed opposite the first planar surface to a second metal substrate is performed by placing an end face of the second metal substrate proximate to the first planar surface. An input laser beam from a fiber laser is generated, and a beam delivery system is provided that is configured to receive the input laser beam and generate an output laser beam having a beam spot that moves in a predetermined pattern along a first and a second axes to irradiate a target area on the second planar surface such that the target area is positioned over an intersection region of the first planar surface where the end face is positioned proximate to the first planar surface.

Laser welding of a first metal substrate having a first planar surface and a second planar surface disposed opposite the first planar surface to a second metal substrate is performed by placing an end face of the second metal substrate proximate to the first planar surface. An input laser beam from a fiber laser is generated, and a beam delivery system is provided that is configured to receive the input laser beam and generate an output laser beam having a beam spot that moves in a predetermined pattern along a first and a second axes to irradiate a target area on the second planar surface such that the target area is positioned over an intersection region of the first planar surface where the end face is positioned proximate to the first planar surface.

A semiconductor module includes a base substrate; a plurality of light emitting elements; a plurality of color conversion layers being in contact with each upper portion of the plurality of light emitting elements adjacent to each other; and a light shielding layer disposed between the plurality of light emitting elements adjacent each other and between the color conversion layers adjacent to each other, and separating the plurality of light emitting elements and a plurality of color conversion layers.

A laser reflow method includes a preparation step of preparing a workpiece including a board and semiconductor chips that each have bumps formed on one surface thereof and are placed on the board with the bumps interposed therebetween and a laser beam irradiation step of irradiating the semiconductor chips with a laser beam from a side of another surface opposite to the one surface, thereby reflowing bumps formed within an irradiated area of the workpiece. In the laser beam irradiation step, the irradiation with the laser beam is carried out while an irradiation range of the laser beam is changed in stages from a region including an outer peripheral portion of the irradiated area toward a region including a central portion of the irradiated area.

A laser reflow method includes a preparation step of preparing a workpiece including a board and semiconductor chips that each have bumps formed on one surface thereof and are placed on the board with the bumps interposed therebetween and a laser beam irradiation step of irradiating the semiconductor chips with a laser beam from a side of another surface opposite to the one surface, thereby reflowing bumps formed within an irradiated area of the workpiece. In the laser beam irradiation step, the irradiation with the laser beam is carried out while an irradiation range of the laser beam is changed in stages from a region including an outer peripheral portion of the irradiated area toward a region including a central portion of the irradiated area.

A mass transferring system and the method thereof are provided. The system includes two platforms and a plurality of picking and placing units. When the mass transferring process is performed for one of the substrates, the replacing process and the aligning process are simultaneously executed for another one of the substrates, such that the mass transferring process and the replacing process can be performed at the same time. Compared with the conventional mass transferring processes, the efficiency of the mass transferring system and the method thereof according to the present invention can be increased by 90%.

A mass transferring system and the method thereof are provided. The system includes two platforms and a plurality of picking and placing units. When the mass transferring process is performed for one of the substrates, the replacing process and the aligning process are simultaneously executed for another one of the substrates, such that the mass transferring process and the replacing process can be performed at the same time. Compared with the conventional mass transferring processes, the efficiency of the mass transferring system and the method thereof according to the present invention can be increased by 90%.

A laser joining method and device includes a pressure-applying clamping device, which presses a first and a second workpiece against one another at least after the workpieces have been locally plasticized, and a mask having mask structures, which allow laser light to pass only in the region of the bonding contact faces, wherein at least the workpiece facing the laser source is formed by a three-dimensional molded part, which is not planar at least on the first contour side facing the clamping element and/or on the second contour side facing the second workpiece, and wherein the clamping element, with the bearing side thereof for the first workpiece, is adapted to the first contour side of the first workpiece. The mask structures are created on the bearing side of the clamping element facing the first workpiece or on the second contour side of the first workpiece facing the second workpiece.