The present invention relates to a method for providing a braze alloy layered product comprising the following steps: applying at least one silicon source and at least one boron source on at least a part of a surface of a substrate, wherein the at least one boron source and the at least one silicon source are oxygen free except for inevitable amounts of contaminating oxygen, and wherein the substrate comprises a parent material having a solidus temperature above 1100 C.; heating the substrate having the applied boron source and the applied silicon source to a temperature lower than the solidus temperature of the parent material of the substrate; and cooling the substrate having the applied boron source and the applied silicon source, and obtaining the braze alloy layered product. The present invention relates further to a braze alloy layered product, a method for providing a brazed product, a method for providing a coated product, and uses of the braze alloy layered product.

A bonding material having a first layer containing Sn as a main component thereof and a second layer containing a metal having a higher melting point than that of Sn as a main component thereof, wherein the first layer and the second layer are laminated on each other, and an amount of Sn in the first layer is larger than a stoichiometric amount of Sn that forms an intermetallic compound between the Sn and the metal.

A copper-ceramic joint body having high joint strength is provided. The copper-ceramic joint body includes: a copper member made of Cu or Cu alloy; a ceramic member joined to the copper member and made of nitride of Si or Al; and a joint layer formed on joint surfaces of the copper member and the ceramic member, and containing Cu and Mg and further containing at least one type of active metal elements selected from a group of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Ca, Y, Ce, La, Sm, Yb, Nd, Gd and Er, and shear strength of the joint layer is equal to or higher than 10 MPa.

The present invention relates to a blend of at least one boron source and at least one silicon source, wherein the blend comprises boron and silicon in a weight ratio boron to silicon within a range from about 5:100 to about 2:1, wherein silicon and boron are present in the blend in at least 25 wt %, and wherein the at least one boron source and the at least one silicon source are oxygen free except for inevitable amounts of contaminating oxygen, and wherein the blend is a mechanical blend of powders, and wherein particles in the powders have an average particle size less than 250 m. The present invention relates further to a composition comprising the blend a substrate applied with the blend, a method for providing a brazed product, and uses.

Shapeable guide wire devices and methods for their manufacture. Guide wire devices include an elongate shaft member having a shapeable distal end section that is formed from a linear pseudoelastic nickel-titanium (NiTi) alloy that has linear pseudoelastic behavior without a phase transformation or onset of stress-induced martensite. Linear pseudoelastic NiTi alloy, which is distinct from non-linear pseudoelastic (i.e., superelastic) NiTi alloy, is highly durable, corrosion resistant, and has high stiffness. The shapeable distal end section is shapeable by a user to facilitate guiding the guide wire through tortuous anatomy. In addition, linear pseudoelastic NiTi alloy is more durable tip material than other shapeable tip materials such as stainless steel.

One aspect provides an implantable medical device with a titanium housing having a flange defining a recess about an opening through the housing. The opening is disposed within the recess. A feedthrough is disposed within the recess with a gap between an insulator of the feedthrough and the flange. A braze joint is between the insulator and the flange that occupies the gap and hermetically seals the insulator to the housing. The braze joint includes a biocompatible gold alloy having a melting point less than the -transus temperature of the titanium of the housing.

Disclosed is a method for producing a permanently joined plate heat exchanger comprising a plurality of metal heat exchanger plates having a solidus temperature above 1100 C., provided beside each other and forming a plate package with first plate interspaces for a first medium and second plate interspaces for a second medium, wherein the first and second plate interspaces are provided in an alternating order in the plate package, wherein each heat exchanger plate comprises a heat transfer area and an edge area comprising bent edges which extend around the heat transfer area, wherein a first surface of the plates forms a convex shape and a second surface of the plates forms a concave shape, wherein the heat transfer area comprises a corrugation of elevations and depressions, wherein said corrugation of the plates and the bent edges are provided by pressing the plates. Also disclosed is a plate heat exchanger produced by the method.

Disclosed is a method for producing a permanently joined plate heat exchanger comprising a plurality of metal heat exchanger plates having a solidus temperature above 1100 C., provided beside each other and forming a plate package with first plate interspaces for a first medium and second plate interspaces for a second medium, wherein the first and second plate interspaces are provided in an alternating order in the plate package. Each heat exchanger plate comprises a heat transfer area and an edge area which extend around the heat transfer area. The heat transfer area comprises a corrugation of elevations and depressions, wherein said corrugation of the plates are provided by pressing the plates. Also disclosed is a plate heat exchanger produced by the method.

A method for treating a Cu thin sheet is provided. The method comprises the steps of: supplying a slurry in which a diffusion bonding aid (DBA), such as Ni powder, and a reinforcing material (RM), such as a carbide base metal compound, are dispersed in a solvent to a predetermined portion on a Cu or Cu base alloy thin sheet, drying the supplied slurry, and applying a laser to induce melting, solidification, and fixation, so as to form a buildup layer. In the method, the weight ratio of DBA to RM is specified to be 80:20 to 50:50, and the median diameters D.sub.50 of both DBA and RM employed fall within 0.1 to 100 m, the median diameter D.sub.50 of DBA is larger than the median diameter D.sub.50 of RM, and both the distribution ratio D.sub.90/D.sub.10 of DBA and the distribution ratio D.sub.90/D.sub.10 of RM are 4.0 or less.

A method of manufacturing a semiconductor device includes forming a barrier metal film on a surface of at least one of a first electrode of a wiring board and a second electrode of a semiconductor element, providing a connection terminal between the first and second electrodes, the connection terminal being made of solder containing tin, bismuth and zinc, and bonding the connection terminal to the barrier metal film by heating the connection terminal and maintaining the temperature of the connection terminal at a constant temperature not lower than a melting point of the solder for a certain period of time.