A method of selectively removing at least part of a first phase from a surface of a nanocomposite includes at least a first phase and a second phase, each phase having a respective threshold fluence under a given number of applied laser pulses for removal of the phase by laser ablation. The threshold fluence of the first phase is less than the threshold fluence of the second phase. The method includes irradiating the surface of the nanocomposite with a laser beam having a laser beam diameter, a laser pulse duration, and a laser pulse energy during the irradiation. The laser fluence during the irradiation is less than the threshold fluence of the second phase and greater than the threshold fluence of the first phase. The laser beam diameter is greater than an average grain size of the first phase at the surface of the nanocomposite.

A solder material for use in electronic assembly, the solder material comprising: solder layers; and a core layer comprising a core material, the core layer being sandwiched between the solder layers, wherein: the thermal conductivity of the core material is greater than the thermal conductivity of the solder.

A laser processing device includes: a stage that supports a wafer having a front surface, on which a plurality of functional elements are formed and a street region extends so as to pass between adjacent functional elements, and a back surface on a side opposite to the front surface; a light source that emits laser light to the wafer from the front surface side to form one or more modified regions inside the wafer; a spatial light modulator as a beam width adjusting unit; and a control unit that controls the spatial light modulator so that the beam width of the laser light is adjusted to be equal to or less than the width of the street region and a target beam width according to surface information including the position and height of a structure forming a functional element adjacent to the street region.

A welding method for a new flexible and rollable silicon-based solar module includes the following steps: cutting a cell piece into a small piece cell string including N small piece cells without splitting; cutting a hard protective layer into N small pieces according to a size of a small piece cell; allowing the cut hard protective layer to be covered on and bonded to a glue-dispensed small piece cell string to form a small string cell piece; arranging the small string cell pieces into a small standard piece according to a required size distribution, and covering the small standard piece with an adhesive film; welding positive electrodes and negative electrodes of the small standard pieces in series simultaneously to form a 1P standard part; and arranging the 1P standard parts, and fixing the 1P standard parts by bonding the adhesive films to each other to form a 5P standard part.

A method of calibrating an ultrasonic characteristic on a wire bonding system is provided. The method includes the steps of: (a) determining a reference ultrasonic characteristic for formation of a wire bond; (b) determining a reference non-stick ultrasonic characteristic that results in a non-stick wire bond condition; (c) determining a calibration non-stick ultrasonic characteristic, on a wire bonding system to be calibrated, that results in a non-stick wire bond condition; and (d) determining a calibration factor for the wire bonding system to be calibrated using the reference non-stick ultrasonic characteristic and the calibration non-stick ultrasonic characteristic.

A dicing method including the steps of: bonding a first wafer having a first wafer resistivity and a second wafer having a second wafer resistivity higher than the wafer first resistivity, thereby forming a bonded wafer; irradiating the bonded wafer with a laser while varying focal lengths in a thickness direction of the bonded wafer, thereby forming a plurality of modified regions along a dicing line; and dicing the bonded wafer along the dicing line by performing an expansion process on the bonded wafer formed with the modified regions.

A method for bonding semiconductor substrates includes placing a die on a substrate and performing a heating process on the die and the substrate to bond the respective first connectors with the respective second connectors. Respective first connectors of a plurality of first connectors on the die contact respective second connectors of a plurality of second connectors on the substrate. The heating process includes placing a mask between a laser generator and the substrate and performing a laser shot. The mask includes a masking layer and a transparent layer. Portions of the masking layer are opaque. The laser passes through a first gap in the masking layer and through the transparent layer to heat a first portion of a top side of the die opposite the substrate.

A laser pipe cutting device is provided. It includes a cutting head, a lathe bed, a first chuck, a second chuck and a third chuck; the first chuck is a fixed chuck for positioning axially and radially a pipe fitting; the second chuck is a rolling chuck for positioning radially the pipe fitting; and a fixed clamping disc and a rolling clamping disc are arranged on the third chuck at both ends. In the scheme, the third chuck integrates both the rolling clamping function and the fixed clamping function to achieve larger supporting weight and more accurate clamping precision, so that the chucks can drive a thin pipe fitting to rotate at a higher speed, the cutting efficiency is improved, and no-dead-angle and zero-tailing cutting is achieved.

A method of processing a wafer having a plurality of devices provided in respective areas demarcated on a face side of the wafer by a plurality of projected dicing lines. The method includes coating the face side with a protective film agent and thereafter drying the protective film agent into a protective film covering the face side, applying a laser beam having a wavelength absorbable by the wafer to the wafer along the projected dicing lines on the face side, thereby producing a plurality of laser-processed slots in the wafer, cleaning away the protective film, applying ultraviolet rays to the face side to remove an organic substance deriving from the protective film and remaining on the face side, and covering coverage areas corresponding to the respective devices on the face side with an encapsulating resin.

A substrate comprises glass, sapphire, silicon and/or aluminosilicate, and has at least one recess or through-opening. The at least one recess or through-opening is formed by anisotropic removal of substrate material by etching a portion of the substrate that has been modified by a pulse of laser radiation in a direction of a thickness of the substrate. The modified portion of the substrate extends along a beam axis of the laser radiation. The pulse of laser radiation was applied with a focus extending from a first focal depth positioned past one side of the substrate to a second focal depth located at an opposite side of the substrate.