A laser processing apparatus includes a support part, a light source, a spatial light modulator, a converging part, and a controller. The controller controls the spatial light modulator so that laser light is branched into a plurality of rays of processing light including 0th-order light and a plurality of converging points for the plurality of rays of processing light are located at positions different from each other in a Z direction and an X direction, and controls at least one of the support part and the converging part so that the X direction coincides with an extension direction of a line and the plurality of converging points move relatively along the line. The controller controls the spatial light modulator so that a converging point of the 0th-order light is located one side with respect to a converging point of non-modulated light of the laser light, in the X direction.

A laser processing device and a laser processing method that are capable of forming a high-quality semiconductor film are provided. An ELA device (excimer laser annealing device) (1) includes a laser oscillator (10) that generates laser light for forming a polysilicon film by irradiating an amorphous silicon film over a substrate to be processed with the laser light, a pulse measuring instrument (100) for detecting first partial light and second partial light contained in the laser light, and a monitoring device (60) for comparing a detection result of the first partial light with a detection result of the second partial light.

A laser processing device includes a stage; a laser irradiation unit; an image capturing unit; a control portion configured to execute controlling the laser irradiation unit such that one or a plurality of modified regions are formed inside the semiconductor substrate when the wafer is irradiated with the laser light, determining whether or not a crack extending from the modified region is in a crack reaching state where the crack has reached a front surface side of the semiconductor substrate on the basis of a signal output from the image capturing unit, and deriving information related to adjustment of irradiation conditions of the laser irradiation unit on the basis of determination results.

A laser processing device includes a stage; a laser irradiation unit configured to irradiate the wafer with laser light; an image capturing unit configured to detect light propagated through a semiconductor substrate; and a control portion configured to execute controlling the laser irradiation unit such that one or a plurality of modified regions are formed inside the semiconductor substrate when the wafer is irradiated with the laser light, deriving a position of a tip of an upper crack on a rear surface side, which is a crack extending from the modified region to the rear surface side of the semiconductor substrate, on the basis of a signal output from the image capturing unit having detected the light, and determining whether or not a crack reaching state has been realized on the basis of the position of the tip of the upper crack on the rear surface side.

A laser processing apparatus includes a chuck table that holds an SiC ingot on a holding surface, a laser beam irradiation unit that positions the focal point of a laser beam to a depth equivalent to the thickness of a wafer to be produced from a first surface and that irradiates the SiC ingot with the laser beam to form a separation layer arising from separation of SiC into Si and C and extension of cracks along a c-plane. A movement unit relatively moves the chuck table and the laser beam irradiation unit, and a separation layer inspecting unit executes irradiation with inspection light with such a wavelength as to have transmissibility with respect to the SiC ingot and be reflected by the separation layer, and inspects the separation layer from the intensity of reflected light. The holding surface has a color that absorbs the inspection light.

A processing apparatus includes a chuck table including a plate-shaped holding component having a predetermined region transparent from one surface to the other surface, a processing unit that processes a workpiece, a first imaging unit disposed over the chuck table to acquire a normal image of the back surface side, and a second imaging unit disposed under the chuck table to acquire a normal image of the front surface side, a display device, and a control part that executes image processing of the normal image of either the back or front surface side to cause the normal image subjected to the image processing to be displayed on the display device in the state of being inverted in a predetermined direction in order to allow the orientation of the normal image of the back surface side to correspond with the orientation of the normal image of the front surface side.

A method for separating a solid body includes: providing a first solid body having opposite first and second surfaces and a crystal lattice, and that is at least partially transparent to a laser beam emitted by a laser; modifying a portion of the crystal lattice by the laser beam, the laser beam penetrating through the first surface, the modified portion of the crystal lattice extending in a plane parallel to the first surface, as a result of the modification, subcritical cracks are formed arranged in a plane parallel to the first surface, a plurality of the subcritical cracks forming a detachment region in the first solid body, the plurality of the subcritical cracks passing at least in some sections through the modified portion of the crystal lattice; and separating the first solid body along the detachment region to form a wafer and a second solid body.

This inspection device includes: a laser irradiation unit, an imaging unit that takes an image of a wafer, a display that receives an input, and a control part, wherein the display receives an input of wafer processing information including information of the wafer and a laser processing target for the wafer, and the control part is configured to determine a recipe (a processing condition) including an irradiation condition of the laser beam by the laser irradiation unit based on the wafer processing information received through the display, to control the laser irradiation unit so that the wafer is irradiated with the laser beam according to the determined recipe, to acquire a laser processing result of the wafer due to the irradiation of the laser beam by controlling the imaging unit to take an image of the wafer, and to evaluate the recipe based on the laser processing result.

A processing apparatus configured to process a processing target object includes a holder configured to hold the processing target object; a modifying device configured to radiate laser light to an inside of the processing target object to form multiple internal modification layers; and a controller. The controller controls an operation of forming the internal modification layers such that the internal modification layers are formed in a spiral shape from a diametrically outer side of the processing target object toward a diametrically inner side thereof, and such that an eccentric amount between the holder and the processing target object held by the holder in the forming of the internal modification layers toward the diametrically inner side of the processing target object becomes smaller than the eccentric amount in forming the internal modification layers toward the diametrically outer side of the processing target object.

A device for modifying a region of a substrate includes a laser radiation source for pulsed laser radiation. A transmissive medium having a higher intensity-dependent refraction index than air is arranged between a laser machining head and the substrate such that an individual pulse of the pulsed laser radiation from the laser machining head is deflected through the transmissive medium and across a thickness of the substrate from an original focal depth to a focal depth different from the original focal depth to modify the substrate along a beam axis of the laser radiation in a region of a recess or through-opening to be formed in the substrate without removing an amount of the substrate material necessary to form the recess or through-opening. A length between the focal depths is greater than and extends across the thickness of the substrate.