A laser dicing system is disclosed. The laser dicing system includes a host device and a laser source. The host device reads and identifies a mark formed on a surface of a semiconductor structure. The laser source is coupled to the host device and is configured to generate a dicing laser energy to form a trench on the semiconductor structure. The dicing laser energy irradiated on the semiconductor structure is adjustable based on information embedded in the mark.

A laser processing system according to an embodiment of the present invention includes: a laser unit emitting a laser beam; an optical unit disposed on a propagation path of the laser beam and modulating the incident laser beam into a Bessel beam; a stage on which a workpiece to be processed with the Bessel beam emitted from the optical unit is mounted; and a control unit for controlling the operations of the laser unit, the optical unit, and the stage, wherein the optical unit is configured to position the focus line of the emitted Bessel beam on the workpiece and to move the focus line positioned on the workpiece with a predetermined range.

A laser processing device includes: a stage that supports a wafer having a front surface, on which a plurality of functional elements are formed and a street region extends so as to pass between adjacent functional elements, and a back surface on a side opposite to the front surface; a light source that emits laser light to the wafer from the front surface side to form one or more modified regions inside the wafer; a spatial light modulator as a beam width adjusting unit; and a control unit that controls the spatial light modulator so that the beam width of the laser light is adjusted to be equal to or less than the width of the street region and a target beam width according to surface information including the position and height of a structure forming a functional element adjacent to the street region.

The present disclosure provides a stealth dicing method and apparatus. With the method, the focusing element focuses the laser beam on the surface of material to be diced, and the dynamic-equilibrium plasma channel is formed in the material to be diced by means of self-focusing and defocusing effect of plasma generated by ionizing the material to be diced. The modified layer may be formed in the material to be diced throughout the plasma channel, so as to realize stealth dicing.

A laser processing method includes a first step of emitting measurement laser light of a first wavelength from the reference surface side to a reference object having a reference surface of which reflectance for the first wavelength is known to obtain a reference light amount as a reflected light amount of the measurement laser light on the reference surface, a second step of emitting the measurement laser light from the first surface side to the object to be processed to obtain a first light amount as a reflected light amount of the measurement laser light on the first surface, and a third step of, after the first step and the second step, calculating a reflectance of the first surface for the first wavelength based on a reflectance of the reference object, the reference light amount, and the first light amount.

The present disclosure provides a printer system based on high power, high brightness visible laser source for improved resolution and printing speeds. Visible laser devices based on high power visible laser diodes can be scaled using the stimulated Raman scattering process to create a high power, high brightness visible laser source.

A substrate comprises glass, sapphire, silicon and/or aluminosilicate, and has at least one recess or through-opening. The at least one recess or through-opening is formed by anisotropic removal of substrate material by etching a portion of the substrate that has been modified by a pulse of laser radiation in a direction of a thickness of the substrate. The modified portion of the substrate extends along a beam axis of the laser radiation. The pulse of laser radiation was applied with a focus extending from a first focal depth positioned past one side of the substrate to a second focal depth located at an opposite side of the substrate.

Embodiments are directed to the formation micro-scale or millimeter scale structures or methods of making such structures wherein the structures are formed from at least one sheet structural material and may include additional sheet structural materials or deposited structural materials wherein all or a portion of the patterning of the structural materials occurs via laser cutting. In some embodiments, selective deposition is used to provide a portion of the patterning. In some embodiments the structural material or structural materials are bounded from below by a sacrificial bridging material (e.g. a metal) and possibly from above by a sacrificial capping material (e.g. a metal).

Various teachings of the present disclosure include a method for welding an attachment piece to a semiconductor metallization using laser welding. The method may include: arranging an attachment piece having a flat side with a thin point so the flat side faces the semiconductor metallization; and welding the flat side to the semiconductor metallization. The flat side rests against a flat side of the semiconductor metallization over an entire surface area of the flat side. The thin point is formed with a cup shape of the attachment piece. The cup shape is open in the direction away from the semiconductor metallization.

A method for joining an optical crystal to a substrate includes radiating a pulsed laser beam through the optical crystal or through the substrate onto a surface of an intermediate layer between the optical crystal and the substrate, and forming a fusion zone in the intermediate layer between the optical crystal and the substrate by the radiation of the pulsed laser beam, thereby integrally joining the optical crystal and the substrate.