The herein disclosed manufacturing method of the electrode plate includes a core body exposed area cutting step for cutting a negative electrode core body exposed area with a laser, on which a negative electrode core body is exposed while a negative electrode active material layer is not provided, so as to form a negative electrode tab. Then, regarding the herein disclosed manufacturing method of the electrode plate, the negative electrode core body includes a first surface and a second surface whose surface roughness is smaller than the first surface, and the laser is irradiated to the first surface. By doing this, it is possible to suppress the sputters from sticking to the second surface, and therefore it is possible to decrease the sticking number of the sputters to the negative electrode tab.

A method includes applying laser pulses along a direction to a side of a wafer to create first and second stealth damage regions at respective first and second depths in the wafer and to create cracks that extend in the wafer from the respective stealth damage regions and that are spaced apart from one another along the direction, applying a compressive and retractive cyclical force to the wafer along the third direction to propagate and join the cracks from the respective stealth damage regions together, and expanding the wafer to separate individual dies from the wafer.

Disclosed is a substrate treating apparatus. The substrate treating apparatus includes a body including an irradiation end, from which laser light is irradiated, a shaft coupled to the body, and a driver that supplies power to the shaft, the heating unit is swung about an axis of the shaft, and the controller moves the irradiation end of the heating unit to a target location on a substrate by adjusting a rotation angle of the heating unit and a rotation angle of the support unit.

A semiconductor device includes a first die, the first die including a first dielectric layer and a plurality of first bond pads formed within apertures in the first dielectric layer, and a second die bonded to the first die, the second die including a second dielectric layer and a plurality of second bond pads protruding from the second dielectric layer. The first die is bonded to the second die such that the plurality of second bond pads protrude into the apertures in the first dielectric layer to establish respective metallurgical bonds with the plurality of first bond pads. A reduction in the distance between the respective bond pads of the dies results in a lower temperature for establishing a hybrid bond.

To realize a laser irradiation apparatus by using which accuracy in processing a substrate can be improved. A laser irradiation apparatus according to an embodiment includes a laser irradiation unit configured to apply laser light to a substrate, a base part, and a conveyance stage configured to convey the substrate. The conveyance stage includes a stage configured to be movable over the base part, a base flange fixed over the stage, a substrate stage fixed to an upper end part of the base flange and configured so that the substrate is placed thereover, and a pusher pin for supporting the substrate, the pusher pin being configured to penetrate the substrate stage and to be movable up and down.

An adhesive sheet for laser dicing is provided that is capable of, in laser dicing by irradiation with laser light through the adhesive sheet, suppressing laser light scattering in the adhesive sheet while allowing easy chip division by expanding the adhesive sheet and enables inhibition of dust attachment during chip division for chip production in high yields. The present invention provides an adhesive sheet for laser dicing, including a substrate film having a back layer containing a friction reducing agent and an antistatic agent on one surface and having an adhesive layer on another surface, wherein the back layer has a surface with arithmetic mean roughness Ra of 0.1 μm or less, the sheet has a tensile modulus of elasticity at 23° C. from 50 to 200 MPa, and the sheet has a parallel transmittance of 85% or more in a wavelength range from 400 to 1400 nm.

A laser beam irradiation unit of a laser processing apparatus includes a laser oscillator that emits a laser beam, a characteristic conversion optical element that converts a characteristic of the laser beam emitted from the laser oscillator, a mirror and a collecting lens that are optical elements that guide the laser beam to a workpiece, a detecting unit that detects the water retention state of the characteristic conversion optical element, and a drying unit that dries the characteristic conversion optical element.

When opaque films are deposited on semi-conductor wafers, underlying features may be concealed. In accordance with one implementation, such concealed features may be re-exposed via an ablation recovery process. One ablation recovery process entails aligning an energy source with a target position on a first surface of a semiconductor wafer based on position information retrieved from a second opposite surface of the semiconductor wafer, and firing a beam of the energy source to ablate opaque material at the target position and to expose a recovery feature underlying the opaque material.

Disclosed herein is a wafer producing method for producing an SiC wafer from a single crystal SiC ingot. The wafer producing method includes a separation surface forming step of forming a separation surface composed of modified layers, cracks, and connection layers inside the ingot and a wafer separating step of separating a part of the ingot along the separation surface as an interface to thereby produce the wafer. The separation surface forming step includes a modified layer forming step of forming the modified layers and the cracks extending from the modified layers along a c-plane, and a connection layer forming step of forming the connection layers each connecting the cracks formed adjacent to each other in the thickness direction of the ingot.

A leakage laser beam detecting method includes a coating step of coating the lower surface of a wafer with an oil marker, thereafter, a press-bonding step of press-bonding an adhesive tape to the lower surface of the wafer, thereafter, a modified layer forming step of applying a laser beam having a wavelength that can be transmitted through the wafer to the wafer from the upper surface thereof while making the laser beam be focused at a focused point within the wafer thereby to form modified layers in the wafer, thereafter, a peeling step of peeling off the press-bonded adhesive tape, and a leakage laser beam detecting step of detecting areas of the lower surface where the oil marker has been removed when the press-bonded adhesive tape is peeled off as areas marked by leakage laser beams.