A laser processing apparatus includes a spatial light modulator for inputting laser light output from a laser light source and outputting laser light after phase modulation by a hologram, and a control unit for presenting, on the spatial light modulator, the hologram for focusing the laser light after the phase modulation output from the spatial light modulator on a plurality of irradiation points in a processing object by a focusing optical system. The control unit sets at least one of a shape and a size of a processing region defined by the irradiation points in a first plane intersecting an optical axis of the laser light and a processing region defined by the irradiation points in a second plane intersecting the optical axis and separated from the first plane in a direction of the optical axis to be different from each other.

A stealth dicing laser device including: a pulse laser generator configured to generate laser light; a condenser lens formed in an optical path of the laser light; a pupil filter configured to transform a phase of the laser light before the laser light passes through the condenser lens; and a controller configured to provide a phase control signal to the pupil filter, wherein the pupil filter transforms the phase of the laser light based on the phase control signal, wherein the phase control signal is a signal transforming a phase expression of the laser light based on a parameter.

A method of manufacturing a flexible device includes joining a first surface of a support substrate to a back surface of a flexible substrate, the first surface being opposite to a second surface of the support substrate; forming an element layer on a front surface of the flexible substrate; and performing multidirectional oblique irradiation of an interface and its vicinity between the support substrate and the flexible substrate with laser light from the second surface of the support substrate to detach the support substrate from the flexible substrate.

Described is a design and method for producing a sputtering target assembly with low deflection made from target material solder bonded to composite backing plate with coefficient of thermal expansion (CTE) matching the target material. The composite backing plate is composite configuration composed of at least two different materials with different CTE. The composite backing plate, after plastic deformation, if necessary, has a CTE matching the target material and low and desirable deflection in the bonding process, and therefore, resulting in a low deflection and low stress target material bonded to composite backing plate assembly. The method includes manufacturing composite backing plate with a flat bond surface, heat treating of target blank and composite backing plate to achieve desirable shape of bond surfaces, solder bonding target to a backing plate, and slowly cooling the assembly to room temperature. Matching CTE in both target material and backing plate eliminates the problem of CTE mismatch and prevents the assembly from deflection and internal stress.

A method for creating an electrical contact between semiconductor layers which are separated by an isolating connection layer. The method comprising: providing a layered stack comprising at least a first semiconductor layer, an isolating connection layer, and a second semiconductor layer, wherein the isolating connection layer is between first semiconductor layer and the second semiconductor layer; laser grooving at least one laser groove in the stack through the first semiconductor layer and the isolating connection layer and partly in the second semiconductor layer, leaving a remainder of the second semiconductor layer; cutting the remainder of the second semiconductor layer.

A wafer production method includes forming, in an ingot, a separating layer that includes modified portions and cracks, by relatively moving the ingot and a focal point of a laser beam, with the focal point positioned at a depth corresponding to a thickness of the wafer, separating the wafer from the ingot by using the separating layer as a separation starting interface, bonding an adhesive tape to at least one of a separated surface of the wafer and a resulting fresh end surface of the ingot, removing separation debris stuck on the at least one surface, by separating the adhesive tape from the at least one surface, and grinding the at least one surface from which the separation debris has been removed. A wafer production machine is also disclosed.

A laser processing apparatus has a laser beam applying unit for applying a laser beam to a workpiece held on a chuck table. The laser beam applying unit includes an elliptical spot forming member for changing the spot shape of a pulsed laser beam into an elliptical shape and making the major axis of the elliptical beam spot parallel to a feeding direction, a diffractive optical element for branching the pulsed laser beam having the elliptical beam spot obtained by the elliptical spot forming member, into a plurality of pulsed laser beams each having an elliptical beam spot whose major axis extends in the feeding direction, and a condensing lens for condensing each of the pulsed laser beams branched by the diffractive optical element to the workpiece in such a manner that the major axes of the elliptical beam spots of the pulsed laser beams branched are partially overlapped.

The invention relates to a method for creating a detachment area (2) in a solid (1), in particular for detaching the solid (1) along the separating region (2). Said solid portion (12) that is to be detached is thinner than the solid body (1) from which the solid portion (12) has been removed. According to the invention, said method preferably comprises at least the following steps: the crystal lattice of the solid (1) is modified by means of a modifying agent, in particular by means of at least one laser, in particular a pico- or femtosecond laser. The modifications, in particular the laser beams penetrate into the solid (1) via a surface (5) of the solid portion (12) which is to be detached, several modifications (9) are created in the crystal lattice, said crystal lattice penetrates, following said modifications (9), in the areas surrounding the modifications (9), at least in one particular part.

In a manufacturing method of a semiconductor element of the present disclosure, a first semiconductor part (SL1) includes a protruding portion (TS) protruding toward an underlying substrate (UK), the protruding portion contains a nitride semiconductor, the protruding portion and the underlying substrate are bonded to each other, a semiconductor substrate (HK) includes a hollow portion (TK) located between the underlying substrate and the first semiconductor part, the hollow portion is in contact with a side surface of the protruding portion and communicates with the outside of the semiconductor substrate, and the protruding portion (TS) is irradiated with the laser beam (LZ) before the first semiconductor part is separated from the semiconductor substrate.

Methods and systems for crystallizing a thin film provide a laser beam spot that is continually advanced across tire thin film to create a sustained complete or partial molten zone that is translated across the thin film, and crystallizes to form uniform, small-grained crystalline structures or grains.