A device includes: a separating unit 10 which forms a weak layer WL in a semiconductor wafer WF supported by a base support unit BS to divide the wafer WF into a thinned wafer WF1 and a residual wafer WF2 with the weak layer WL as a boundary, and separates the wafer WF2 from the wafer WF1; a first transfer unit 20 which transfers the wafer WF1 from which the wafer WF2 is separated by the unit 10; a processing unit 30 which applies predetermined processing to the WF1 transferred by the unit 20; a second transfer unit 40 which transfers the wafer WF1 to which the predetermined processing is applied by the unit 30; and a reinforcing member pasting unit 50 which pastes a reinforcing member AS on the wafer WF1 transferred by the unit 40. The unit 20 and the unit 40 transfer the wafer WF1 with the unit BS.

The invention relates to laser equipment, specifically pulsed scanning lasers used to cut brittle substrates. The authors propose a method and device for forming a stressed edge in the substrate for cleaving of the substrate, to which end a track of cavities is formed through optically induced breakdown in the body of tire material during its irradiation with a focused laser beam with a fixed focal distance during the course of angled scanning of the laser beam, with longitudinal movement along the length of the substrate. The technical result is: improved strength parameters of products and better quality of straight and oblique edges formed during substrate cleaving, absence of chips and microcracks, high rate of formation of the stressed cleaving edge, which implies faster laser cutting.

A method of splitting a semiconductor work piece includes: forming a separation zone within the semiconductor work piece, wherein forming the separation zone comprises modifying semiconductor material of the semiconductor work piece at a plurality of targeted positions within the separation zone in at least one physical property which increases thermo-mechanical stress within the separation zone relative to a remainder of the semiconductor work piece, wherein modifying the semiconductor material in one of the targeted positions comprises focusing at least two laser beams to the targeted position; and applying an external force or stress to the semiconductor work piece such that at least one crack propagates along the separation zone and the semiconductor work piece splits into two separate pieces. Additional work piece splitting techniques and techniques for compensating work piece deformation that occurs during the splitting process are also described.

A device includes a first laser emitter, a second laser emitter, and a separating portion. The first laser emitter is configured to emit, in an outer circumferential portion of a bonded substrate including a first substrate and a second substrate bonded to each other, a first laser beam into the first substrate from a side of the first substrate to form a modified layer. The second laser emitter is configured to emit a second laser beam to a material layer that is arranged between the first substrate and the second substrate and is provided on the second substrate from a side of the second substrate, to cause peeling between the second substrate and the material layer. The separating portion is configured to separate an outer circumferential portion of the first substrate and an outer circumferential portion of the material layer from the outer circumferential portion of the bonded substrate.

An adjustment method of a laser processing apparatus includes a spatial light modulator adjustment step of adjusting a spatial light modulator into a state ready for splitting a laser beam emitted from a laser oscillator and applying a plurality of laser beams such that laser beams will have a desired positional relation, a processing mark formation step of operating the laser oscillator to apply the laser beams to a wafer such that a plurality of processing marks is formed, an imaging step of stopping the laser oscillator, and imaging the processing marks formed at the wafer, and an aberration correction step of correcting aberration of the condenser by comparing the desired positional relation and a positional relation among the imaged processing marks, and adjusting the spatial light modulator such that the positional relation among the processing marks conforms to the desired positional relation.

A component for use inside a semiconductor chamber with a laser textured surface facing a vacuum region inside the semiconductor chamber is provided.

A cutting method includes: forming a reformed region in a workpiece; and after forming the reformed region in the workpiece, cutting the workpiece along an intended cut line. In the cutting the workpiece, a dry etching process is performed from a front surface toward a rear surface of the workpiece while the workpiece is fixed on a support member at least under its own weight or by suction, to form a groove from the front surface to reach the rear surface of the workpiece.

A bonded body according to an embodiment includes a ceramic substrate, a copper plate, and a bonding layer that is located on at least one surface of the ceramic substrate and bonds the ceramic substrate and the copper plate. The bonding layer includes titanium. The bonding layer includes first and second regions; the first region includes a layer including titanium as a major component; the layer is formed at an interface of the bonding layer with the ceramic substrate; and the second region is positioned between the first region and the copper plate. The bonded body has a ratio M1/M2 of a titanium concentration M1 at % in the first region and a titanium concentration M2 at % in the second region that is not less than 0.1 and not more than 5 when the Ti concentrations are measured by EDX respectively in measurement regions in the first and second regions.

A substrate processing apparatus includes a chuck table including a mounting table having a mounting surface on which a substrate is mounted, wherein the mounting surface is a curved surface; and a laser supply head configured to irradiate the substrate attached to the mounting table with a laser beam.

A method of processing a wafer to divide the wafer into individual device chips, includes a second modified layer forming step of applying a laser beam to the wafer while positioning a focused spot of the laser beam inside the wafer along the projected dicing lines extending in a second direction intersecting with a first direction, thereby forming second modified layers in the wafer along the projected dicing lines extending in the second direction. In the second modified layer forming step, when the focused spot of the laser beam along the projected dicing lines extending in the second direction reaches first modified layers, the focused spot of the laser beam is shifted along the first modified layers to thereby undulate the laser beam in a staggered pattern to prevent the second modified layers from being formed straight in the wafer along the projected dicing lines extending in the second direction.