A control device for controlling an annealing apparatus that performs laser annealing by causing a laser beam to be incident on a surface of a semiconductor wafer and moving a beam spot of the laser beam on the surface of the semiconductor wafer, the control device making a sweep speed of the beam spot of the laser beam faster than twice a value obtained by dividing a thermal diffusivity of the semiconductor wafer by a thickness of the semiconductor wafer.

A method of manufacturing a semiconductor laser element includes: first dividing a substrate to produce a divided substrate including waveguides spaced apart in a second direction, the substrate being a substrate on which a nitride-based semiconductor laser stacking structure including waveguides extending in the first direction is formed; cleaving the divided substrate in the second direction to produce a semiconductor laser element including waveguides; and second dividing the semiconductor laser element in the first direction to remove an end portion of the semiconductor laser element in the second direction. The cleaving includes: forming, on the divided substrate, a cleavage lead-in groove extending in the second direction; and cleaving the divided substrate using the cleavage lead-in groove. In the second dividing, a portion including the cleavage lead-in groove is removed as the end portion of the semiconductor laser element in the second direction.

A laser crystallization device includes: a first solid-state laser generator which generates a first solid-state laser having a first energy intensity; a second solid-state laser generator which generates a second solid-state laser having a second energy intensity lower than the first energy intensity; and a third solid-state laser generator which generates a third solid-state laser having a third energy intensity lower than the first energy intensity.

A method for slicing an ingot column is provided, including the following steps: immersing the column into a solution; rotating the column; focusing the rotating column with a focusing device; and using a laser device to cut the rotating column into sliced wafers. The slicing equipment of the present invention has a simple structure, easy operation, small kerf of the column, and fast slicing speed.

An optical system that relays light to a machining lens to be used for machining on a workpiece includes a spatial light modulator and a second lens arranged between the spatial light modulator and the machining lens, a distance D from the second lens to a machining lens pupil is D = f.sub.2 - Mf.sub.2, and a distance D1 from the spatial light modulator to the second lens is D1 = f.sub.2 - f.sub.2/M, and the spatial light modulator has a conjugate relation with the machining lens pupil of the machining lens, where f.sub.2 is a focal length of the second lens, and M is a projection magnification from the spatial light modulator to the machining lens pupil of the machining lens.

A monocrystalline silicon wafer fabricated such that a particular crystal plane, e.g., a crystal plane (100), included in crystal planes {100} is exposed on each of face and reverse sides of the monocrystalline silicon wafer is irradiated with a laser beam along a first direction parallel to the particular crystal plane and inclined to a particular crystal orientation, e.g., a crystal orientation [010], included in crystal orientations <100> at an angle of 5° or less, thereby forming a peel-off layer that functions as separation initiating points between a part of the monocrystalline silicon wafer that belongs to the face side thereof and a part of the monocrystalline silicon wafer that belongs to the reverse side thereof.

A wafer manufacturing apparatus includes a chuck table configured to hold an SiC ingot by a suction surface with a wafer to be manufactured on an upper side, an ultrasonic oscillating unit configured to oscillate an ultrasonic wave, a water supply unit, and a peeling unit configured to suck and hold the wafer to be manufactured, and peel the wafer to be manufactured. The chuck table includes a porous plate forming the suction surface and a base supporting the porous plate, and sucks and holds the SiC ingot even in a state in which an area of a second surface of the SiC ingot is smaller than an area of the suction surface, and the water flows on the suction surface exposed on the periphery of the SiC ingot.

A semiconductor die includes a substrate having a semiconductor surface layer bon a front side with active circuitry including at last one transistor therein and a back side. The sidewall edges of the semiconductor die have at least one damage region pair including an angled damage feature region relative to a surface normal of the semiconductor die that is above a damage region that is more normal to the surface normal of the die as compared to the angled damage feature region.

A laser processing device includes a control unit, and the control unit executes a first process of controlling a laser irradiation unit according to a first processing condition set such that a modified region and a modified region are formed inside a wafer; a second process of identifying a state related to each of the modified regions, and of determining whether or not the first processing condition is proper; a third process of controlling the laser irradiation unit according to a second processing condition set such that the modified regions are formed and a modified region is formed between the modified regions in a thickness direction of the wafer inside the wafer; and a fourth process of identifying a state related to each of the modified regions, and of determining whether or not the second processing condition is proper.

A device includes a first substrate, a silicon layer supported by the first substrate, and an active glass layer with a layer including a crystal material with a chemical formula ABX.sub.3 supported by a glass substrate. The active glass layer is stacked on the first substrate such that the layer including the crystal material with a chemical formula ABX.sub.3 and silicon layer are arranged between the first substrate and the glass substrate.