A method of producing a carrier for use in a double-side polishing apparatus, the method including engaging an insert with a holding hole formed in a carrier body and sticking the insert to the holding hole, the carrier body being configured to be disposed between upper and lower turn tables to which polishing pads are attached of the double-side polishing apparatus, the holding hole being configured to hold a wafer during polishing, the insert being configured to contact an edge of the wafer to be held, the method including: performing a lapping process and a polishing process on the insert; engaging the insert subjected to the lapping process and the polishing process with the holding hole of the carrier body; and sticking and drying the engaged insert while applying a load to the insert in a direction perpendicular to main surfaces of the carrier body.

A numeric-control work centre can be used for carrying out cutting operations or grinding and/or milling operations on plates of stone, marble, or, in general, natural or synthetic stone material, or ceramic material. The work centre comprises at least one working head movable along at least two mutually orthogonal horizontal axes on a work surface. The work surface includes a rigid supporting board, which defines a first planar supporting surface, and a series of sacrificial elements rigidly connected to the rigid supporting board. The sacrificial elements are arranged in positions spaced apart from each other and define a second supporting surface located at a higher level than the first planar supporting surface, so that a cutting tool coupled to the working head engraves the sacrificial elements, without interfering with the supporting board during a cutting operation on a plate resting on the sacrificial elements, whichever is the path followed by the cutting tool. Between the sacrificial elements there remain free portions of the planar surface of the supporting board, so that they can be removably engaged by one or more blocks for supporting and holding the plate. These blocks project above the sacrificial elements and are adapted to define a third supporting surface, located at a higher level than the second supporting surface, for supporting and holding a plate during a milling or grinding operation on the plate.

A method and apparatus for on-line measurement of the wafer thinning and grinding force, related to the field of ultra-precision machining of semiconductor wafer materials. The grinding force measuring apparatus comprises a semiconductor wafer, a worktable, a bearing table, a thin film pressure sensor, and a data processing and wireless transmission module. The grinding force measuring method includes sensor calibration based on the testing device and on-line measurement of grinding force. Using the grinding force measuring device and method provided by the invention, the grinding force in the semiconductor wafer grinding process can be monitored in real time, which is of great significance for semiconductor processing and reducing grinding damage. The invention also has the following characteristics: the sensor adopts a film pressure sensor, the response time is short, and the test precision is high; the data transmission adopts a wireless transmission design, thus the grinding force can be monitored in real time during the wafer and spindle rotation process and the risk of winding during wafer rotation can be avoided. The sensor adopts a distributed design, which can monitor the distribution of the grinding force along the wafer radial direction or crystal orientation.

A rock sanding device includes a base, a bottom sanding plate, an adjustable connecting rod, an elastic loader, a connector, a side sanding brush, a top sanding plate, an inner rod, a prong and a drill rod. The top of the drill rod is fixedly connected with the rotating shaft of the external water drilling rig and the external water drilling rig has a water inlet joint to introduce water into the drill rod. The inner rod and drill rod are connected and fixed coaxially, and the bottom of the drill rod is symmetrically welded with four prongs. The rock specimen is placed in the center of the side sanding brush. The top sanding plate and the bottom sanding plate are provided in the top side and bottom side of the rock specimen, respectively.

A rock sanding device includes a base, a bottom sanding plate, an adjustable connecting rod, an elastic loader, a connector, a side sanding brush, a top sanding plate, an inner rod, a prong and a drill rod. The top of the drill rod is fixedly connected with the rotating shaft of the external water drilling rig and the external water drilling rig has a water inlet joint to introduce water into the drill rod. The inner rod and drill rod are connected and fixed coaxially, and the bottom of the drill rod is symmetrically welded with four prongs. The rock specimen is placed in the center of the side sanding brush. The top sanding plate and the bottom sanding plate are provided in the top side and bottom side of the rock specimen, respectively.

A substrate processing apparatus configured to process a substrate includes a substrate holder configured to hold, in a combined substrate in which a first substrate and a second substrate are bonded to each other, the second substrate; a periphery removing unit configured to remove, starting from a periphery modification layer formed on the first substrate along a boundary between a peripheral portion to be removed and a central portion of the first substrate, the peripheral portion from the combined substrate held by the substrate holder; and a collection unit equipped with a collection mechanism configured to collect the peripheral portion removed by the periphery removing unit.

A grinding method includes a step of imaging a bonded workpiece by a camera in such a manner as to include the outer circumference of a workpiece and the outer circumference of a support component with a larger diameter than that of the workpiece before a step of holding the support component of the bonded workpiece by a holding surface. The grinding method also includes a step of recognizing the outer circumference of the support component and the outer circumference of the workpiece on the basis of the brightness difference between pixels adjacent to each other in a taken image and a step of recognizing the center of the support component from the recognized outer circumference of the support component and recognizing the center of the workpiece from the recognized outer circumference of the workpiece.

A wafer processing method in which a wafer including devices on a front surface side is processed. The method includes a wafer-with-protective-component forming step of forming the wafer with a protective component through sticking the protective component formed of a resin that softens by heat to the front surface side by pressing and heating the protective component, a thickness measurement step of measuring a thickness of the protective component in the wafer with the protective component, and a grinding step of holding the wafer with the protective component by a chuck table and grinding a back surface side of the wafer until a thickness of the wafer becomes an intended finished thickness. In the grinding step, the thickness of the protective component measured in the thickness measurement step is subtracted from a total thickness of the wafer with the protective component to calculate the thickness of the wafer.

A composition for semiconductor processing comprises: polishing particles; a thiazolinone compound; and a solvent, wherein a logarithmic reduction factor of a microorganism in the composition, as calculated by Formula 1, is at least 4:

Logarithmic reduction factor=log(CFU.sub.0/CFU.sub.x)  Formula 1 where CFU.sub.0 is an initial concentration (CFU/mL) of the microorganism, CFU.sub.x is a concentration (CFU/mL) of the microorganism remaining after standing at room temperature for X days, and X is 1, 2, 3, 4, 5 or 6.

A {100} indium phosphide (InP) wafer has multiplies of olive-shaped etch pits on the back side surface of the wafer, wherein the olive shape refers to a shape with its both ends being narrow and its middle being wide, e.g., an oval shape. A method of manufacturing the {100} indium phosphide wafer comprises: etching the wafer by immersing it into an etching solution to produce etch pits; washing the wafer with deionized water; protecting the back side surface of the wafer; mechanical polishing and chemical polishing the front side surface of the wafer, and then washing it with deionized water; de-protecting the back side surface of the wafer; wherein the etching solution comprises an acidic substance, deionized water and an oxidizing agent. The wafer can be heated uniformly during the epitaxial growth and thus displays good application effect.