A RAMO.sub.4 substrate includes a single crystal represented by a formula of RAMO.sub.4 (in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected from a group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on one surface of the RAMO.sub.4 substrate, a satin-finish surface is provided on another surface. The satin-finish surface has surface roughness which is larger than that of the epitaxially-grown surface.

A RAMO.sub.4 substrate includes a single crystal represented by a formula of RAMO.sub.4 (in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected from a group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on one surface of the RAMO.sub.4 substrate, a satin-finish surface is provided on another surface. The satin-finish surface has surface roughness which is larger than that of the epitaxially-grown surface.

A grinding apparatus includes a holding table that holds a wafer, a grinding unit that grinds an exposed surface of the wafer held by the holding table, a detecting unit that detects a physical quantity used for determination of the state of exposure of a separation surface of the wafer, and a control unit having an exposure determining unit that determines the state of exposure of the separation surface on the basis of the physical quantity detected by the detecting unit.

A grinding wheel for grinding a workpiece containing a ductile material, the grinding wheel including an annular wheel base having a fixed end adapted to be fixed to a lower end of a spindle and having a free end adapted to face the workpiece to be ground, and a plurality of grindstones each shaped as a rectangular plate, disposed on the free end of the annular wheel base, and arrayed at predetermined intervals with respective longer sides disposed along circumferential directions of the wheel base. Each of the grindstones includes an electroformed grindstone shaped as a rectangular plate and made up of abrasive grains secured together by nickel plating, and has a thickness of 1 mm or smaller and a value ranging from 5 inclusive to 35 exclusive that is represented by a ratio of a height from the free end to the thickness.

A floor leveling apparatus and method for cutting parallel grooves in a hardened body which is configured to assist in utilizing a grinder to finish surfaces in a planar manner.

A floor leveling apparatus and method for cutting parallel grooves in a hardened body which is configured to assist in utilizing a grinder to finish surfaces in a planar manner.

A double-side polishing method including: disposing a wafer between a polishing pad attached to an upper surface of a lower turn table and a polishing pad attached to a lower surface of an upper turn table provided above the lower turn table; and polishing both sides of the wafer. An absolute value of a difference between a gap at inner circumferential portions of the two polishing pads and a gap at outer circumferential portions thereof is defined as a pad gap. The pad gap is larger when the both sides of the wafer are polished than when the two polishing pads are dressed. This provides a double-side polishing method that simultaneously achieves enhancement of quality level (processing precision) and extension of cloth life.

A stacked wafer processing method for processing one wafer of a stacked wafer having at least two layers laminated, includes a sheet laying step of laying a thermocompression bonding sheet on an upper face of the one wafer, a thermocompression bonding step of thermocompression-bonding the thermocompression bonding sheet to an outer peripheral portion of the one wafer where a chamfered portion is formed, a modified layer forming step of irradiating the stacked wafer with a laser beam having a transmission wavelength to the thermocompression bonding sheet and the one wafer from the thermocompression bonding sheet side with a focal point of the laser beam positioned inside the outer peripheral portion of the one wafer, thereby continuously forming a modified layer inside the one wafer, and a chamfered portion removing step of expanding the thermocompression bonding sheet to break the chamfered portion, thereby removing the chamfered portion from the one wafer.

A wafer processing method includes a holding step of holding a wafer on a chuck table; a dressing step of cutting a peripheral marginal area of the wafer by a cutting blade mounted to a cutting unit to condition a state of a cutting edge; and a dividing step of cutting streets by the cutting blade mounted to the cutting unit to divide the wafer into individual device chips.

This document describes systems and processes manufacturing and distributing stone slabs, such as including distributing a stone slab and a slab image file associated with the stone slab. The slab image file may include an image and associated information to facilitate one or more operations related to the stone slab.