Described is a tool-holder cylinder (100; 300) for supporting abrasive tools, designed to be attached to a head (71) of a machine tool for surface machining of ceramic and/or stone materials, wherein said head (71) is configured to rotate about a first axis (x) substantially parallel to a surface to be machined and coinciding with the axis of central symmetry of said cylinder (100; 300), said cylinder (100; 300) comprising an upper surface (120; 320), a lower surface (130; 330), and a side surface (160; 360) parallel to the first axis (x) and on which are formed a plurality of seats (111; 311) designed to house said abrasive tools by means of a dovetail coupling, characterised in that said seats (111; 311) have a first tapering which extends perpendicularly and away from the first axis (x), and a second tapering parallel to the first axis (x). The invention further relates to an abrasive unit comprising a cylinder of the said type and to a machine comprising said abrasive unit.

A semiconductor substrate grinding apparatus including a chuck table configured to mount and fix a semiconductor substrate, so that a back side of the semiconductor substrate faces upwardly and rotates in one direction; a grinding wheel on the chuck table configured to grind the back side of the semiconductor substrate; a cleaning liquid supplier on the chuck table, spaced apart from the grinding wheel, and configured to supply a cleaning liquid to the back side of the semiconductor substrate for cleaning by-products generated by grinding the semiconductor substrate; a slurry supplier on the chuck table, adjacent to the cleaning liquid supplier, and configured to supply a slurry to the back side of the semiconductor substrate; and a polishing wheel on the chuck table, spaced apart from the slurry supplier, and configured to perform chemical mechanical polishing on the back side of the semiconductor substrate using the slurry.

In one implementation, a method of forming a porous polishing pad is provided. The method comprises depositing a plurality of composite layers with a 3D printer to reach a target thickness. Depositing the plurality of composite layers comprises dispensing one or more droplets of a curable resin precursor composition onto a support. Depositing the plurality of composite layers further comprises dispensing one or more droplets of a porosity-forming composition onto the support, wherein at least one component of the porosity-forming composition is removable to form the pores in the porous polishing pad.

In one implementation, a method of forming a porous polishing pad is provided. The method comprises depositing a plurality of composite layers with a 3D printer to reach a target thickness. Depositing the plurality of composite layers comprises dispensing one or more droplets of a curable resin precursor composition onto a support. Depositing the plurality of composite layers further comprises dispensing one or more droplets of a porosity-forming composition onto the support, wherein at least one component of the porosity-forming composition is removable to form the pores in the porous polishing pad.

A method of manufacturing a fluorescent substance includes forming dicing trenches on one surface of a fluorescent substance wafer along lattice-shaped dicing lines, and a lower surface grinding operation (S6) of grinding a surface opposite to a surface of the wafer in which the dicing trenches are formed as much as a predetermined thickness using a disk-shaped grinder so that the wafer is divided into a plurality of fluorescent substances, which are color conversion members for light emitting diodes (LEDs).

The present disclosure relates to a floor grinding machine for grinding floor surfaces of stone or stone-like material. Such a machine comprises a machine frame, a grinding head 2, supported by and being rotatable relative to the machine frame, a grinding head hood 2, which defines a space in which the grinding head 1 is rotatable, a hollow and resilient member 4, arranged in the space, and a pressurized fluid source, operatively connected to the hollow member 4 to supply said pressurized fluid, whereby the hollow member 4 is resiliently expandable upon supply of said fluid.

A distance measuring device comprises a measuring head, the measuring head having an optical measuring system for carrying out an optical measurement process on a measurement object by means of at least one measuring light beam formed from a broad-band measuring light. The measuring head further has a liquid guide with a liquid inlet and a liquid outlet for producing a jet of liquid directed at the measurement object, the liquid guide being designed such that in certain sections at least the measuring light beam runs essentially along the jet of liquid. The measuring head further has a flow element with a laminar flow channel, the flow element being designed such that the at least one measuring light beam is able to reach the measurement object by passing through the laminar flow channel.

The present embodiments provide a mechanism for computing a thickness of a scanned wafer shape to determine a profile, and computing a delta correction value and a polishing end point time by using a computed PV value by the profile and a set predicted PV value and reflecting the same on the polishing time of each wafer which is under polishing. Accordingly, excellent flatness of a wafer surface can be achieved and simultaneously, a plurality of controllers can be controlled simultaneously to reduce equipment cost.

A {100} indium phosphide (InP) wafer has multiplies of olive-shaped etch pits on the back side surface of the wafer, wherein the olive shape refers to a shape with its both ends being narrow and its middle being wide, e.g., an oval shape. A method of manufacturing the {100} indium phosphide wafer comprises: etching the wafer by immersing it into an etching solution to produce etch pits; washing the wafer with deionized water; protecting the back side surface of the wafer; mechanical polishing and chemical polishing the front side surface of the wafer, and then washing it with deionized water; de-protecting the back side surface of the wafer; wherein the etching solution comprises an acidic substance, deionized water and an oxidizing agent. The wafer can be heated uniformly during the epitaxial growth and thus displays good application effect.

A method and apparatus for on-line measurement of the wafer thinning and grinding force, related to the field of ultra-precision machining of semiconductor wafer materials. The grinding force measuring apparatus comprises a semiconductor wafer, a worktable, a bearing table, a thin film pressure sensor, and a data processing and wireless transmission module. The grinding force measuring method includes sensor calibration based on the testing device and on-line measurement of grinding force. Using the grinding force measuring device and method provided by the invention, the grinding force in the semiconductor wafer grinding process can be monitored in real time, which is of great significance for semiconductor processing and reducing grinding damage. The invention also has the following characteristics: the sensor adopts a film pressure sensor, the response time is short, and the test precision is high; the data transmission adopts a wireless transmission design, thus the grinding force can be monitored in real time during the wafer and spindle rotation process and the risk of winding during wafer rotation can be avoided. The sensor adopts a distributed design, which can monitor the distribution of the grinding force along the wafer radial direction or crystal orientation.