A grinding wheel includes a plurality of grinding stone groups arranged in an annular array, each of the grinding stone groups including at least three grinding stone segments having different thicknesses which include a smallest thickness, an intermediate thickness, and a largest thickness. The grinding stone segments in each of the grinding stone groups are successively arranged in the order of the grinding stone segment having the smallest thickness, the grinding stone segment having the intermediate thickness, and the grinding stone segment having the largest thickness, with uniform gaps left therebetween. The grinding stone segments in the grinding stone groups have respective radially inner edges aligned with each other in an annular shape.

A semiconductor wafer is adhered and fixed to a polishing head by means of a conductive adhesive, and the wafer is connected to a positive electrode of an external power supply through wires of the inner and outer rings of a conductive slip ring below the wafer. A polishing pad is adhered to the bottom of a counter electrode disc, the counter electrode disc is fixed at the bottom of a polishing disc and is processed with through holes at the position corresponding to the polishing disc, and the counter electrode disc is connected to a negative electrode of the external power supply through the wires of inner and outer rings of a conductive slip ring above the counter electrode disc. Ultraviolet light emitted by an ultraviolet light source can reach the surface of the wafer through the through holes, and a polishing solution can be sprayed through the through holes into a contact area between the wafer and the polishing pad.

A semiconductor wafer is adhered and fixed to a polishing head by means of a conductive adhesive, and the wafer is connected to a positive electrode of an external power supply through wires of the inner and outer rings of a conductive slip ring below the wafer. A polishing pad is adhered to the bottom of a counter electrode disc, the counter electrode disc is fixed at the bottom of a polishing disc and is processed with through holes at the position corresponding to the polishing disc, and the counter electrode disc is connected to a negative electrode of the external power supply through the wires of inner and outer rings of a conductive slip ring above the counter electrode disc. Ultraviolet light emitted by an ultraviolet light source can reach the surface of the wafer through the through holes, and a polishing solution can be sprayed through the through holes into a contact area between the wafer and the polishing pad.

A method in dry shake coating of a concrete floor, whereby an applied floor concrete mass is subjected to early after-care, in which connection, if necessary, after floating, on top of the floor concrete mass is applied a dry shake material for two or more superimposed dry shake layers, in which connection the surface of a currently underlying dry shake layer is troweled prior to the application of a next dry shake layer to be processed thereupon, whereafter the lastly processed dry shake layer of a concrete floor is troweled and the concrete floor is subjected to actual aftercare. The application of an underlying dry shake layer is followed by spreading over its surface a water soluble silica-based medium prior to and/or during the course of troweling this particular dry shake layer and prior to the application of an overlying dry shake layer to be spread thereupon.

A substrate processing apparatus includes a rotary table configured to move each of multiple substrate chucks to, in sequence, a carry-in position where a carry-in of a substrate is performed, a processing position where thinning of the substrate is performed, and a carry-out position where a carry-out of the substrate is performed; a tilt angle adjusting device configured to adjust a tilt angle of the substrate chuck with respect to the rotary table at the processing position; and a tilt angle controller configured to control the tilt angle adjusting device based on a measurement result of a plate thickness measuring device. The plate thickness measuring device measures a plate thickness of the substrate at the carry-out position.

Implementations of systems for thinning a semiconductor substrate may include: a substrate chuck configured to receive a semiconductor substrate for thinning, a spindle, a grinding wheel coupled to the spindle, and a water medium configured to be in contact with the semiconductor substrate during thinning. An ultrasonic energy source may be directly coupled to the substrate chuck, the spindle, the grinding wheel, the water medium, or any combination thereof.

Provided is a polishing pad including a polishing layer, wherein the nuclear magnetic resonance (NMR) .sup.13C spectrum of a processed composition prepared by adding 1 g of the polishing layer to a 0.3 M aqueous solution of potassium hydroxide (KOH) and allowing the mixture to react in a closed container at a temperature of 150° C. for 48 hours includes a first peak appearing at 15 ppm to 18 ppm, a second peak appearing at 9 ppm to 11 ppm, and a third peak appearing at 138 ppm to 143 ppm, and the area ratio of the third peak to the second peak is about 5:1 to about 10:1. The polishing pad may exhibit physical properties corresponding to the above-described peak characteristics, thereby achieving a removal rate and defect prevention performance within desired ranges in polishing of a polishing target.

The present disclosure relates to a polishing pad, a method of manufacturing the polishing pad, and a method of manufacturing a semiconductor device using the same. In the polishing pad, an unexpanded solid-phase blowing agent is included in a polishing composition when a polishing layer is manufactured, and the unexpanded solid-phase blowing agent is expanded during a curing process to form a plurality of uniform pores in the polishing layer, such that defects occurring on a surface of the semiconductor substrate may be prevented. In addition, the present disclosure may provide a method of manufacturing a semiconductor device to which the polishing pad is applied.

A wafer processing method for processing a wafer having a chamfered portion formed at a periphery thereof includes a tape attaching step of attaching a protective tape to a front surface of the wafer and making a diameter of the protective tape coincide with a diameter of the wafer; a grinding step of grinding a back surface of the wafer held by a holding table with use of grinding stones so as to thin the wafer to a thickness thinner than half of an original thickness, to reduce the diameter of the wafer, and to form a protruding portion where the protective tape protrudes from the wafer; and a contracting step of heating and contracting the protruding portion of the protective tape after the grinding step is carried out.

A method and system for polishing a plurality of workpieces is disclosed. The method and system comprises providing a polishing tool with multiple polishing heads; and providing a substrate tray that can hold the plurality of work pieces in a fixed position on a tray underneath the polishing heads. The system and method includes moving the tray within the polisher. Finally, the method and system includes configuring the multiple polishing heads with the appropriate pad/slurry combinations to polish the workpieces and to create a finished polished surface on the plurality of work pieces.