A method of manufacturing a SiC substrate includes grinding a sliced SiC substrate on a side of its front surface on which a Si-face is exposed, grinding the sliced SiC substrate on a side of its back surface on which a C-face is exposed, such that the back surface has an arithmetic mean height Sa of 1 nm or less, and then polishing the sliced SiC substrate on the side of only the front surface and not on the side of the back surface. In a case where the side of the back surface is ground as described above, the SiC substrate can be prevented from being warped even if the side of the back surface is not polished. This can shorten the manufacturing lead time for the SiC substrate used for the manufacture of power devices or the like and can also reduce the manufacturing cost.

A substrate-cleaning apparatus may include a tilting arm to which a roll brush and a motor are coupled, a support arm positioned on the tilting arm, a first spring and a second spring coupling the tilting arm to the support arm, a first air bag and a second air bag mounted between the tilting arm and the support arm, and a controller configured to adjust an internal pressure of each of the first air bag and the second air bag. The controller may adjust a difference in internal pressure between the first air bag and the second air bag to control the inclination of the roll brush, and may adjust the internal pressure of each of the first air bag and the second air bag to move the roll brush vertically.

A processing method for a wafer having a chamfered portion at a peripheral edge includes a holding step of holding the wafer by a holding table, and a chamfer removing step of rotating the holding table while causing a first cutting blade to cut into the peripheral edge of the wafer while supplying a cutting liquid from a first cutting liquid supply nozzle to cut the peripheral edge of the wafer. In the chamfer removing step, a second cutting unit is positioned at a position adjacent to the first cutting unit at such a height that a second cutting blade does not make contact with the wafer and on the side of the center of the wafer as compared to the first cutting unit, and the cutting liquid is supplied from a second cutting liquid supply nozzle.

A wafer conveying device, a chemical-mechanical planarization device and a wafer conveying method; the wafer conveying device comprises a manipulator used to clamp and transport wafers, as well as a transfer platform used to place the wafers; the manipulator consists of a 1.sup.st claw, a 2.sup.nd claw, a lifting platform, a movement mechanism, a rotation mechanism and a control mechanism; the transfer platform consists of a 1.sup.st transfer platform, a 2.sup.nd transfer platform and an installation rack. During wafer transmission, dry-wet wafers separation can be realized to avoid contamination to the clean wafers caused by liquids such as polishing liquid carried by the polished wafers, and to improve yield rate of the wafers.

A processing apparatus includes a chuck table having a holding surface for holding a workpiece thereon, and a processing unit. The processing unit includes a spindle, a wheel mount coupled to an end of the spindle and facing the holding surface, a first tool detachably mounted on a mount surface of the wheel mount, the first tool having a first diameter, a second tool mount nonrotatably and axially movably mounted on the spindle over a rear surface of the wheel mount which is opposite the mount surface, the second tool mount having a storage region for the wheel mount and the first tool, a second tool mount member surrounding the storage region and having an inside diameter larger than the first diameter, and a second tool detachably mounted on the second tool mount and having an inside diameter larger than the first diameter.

To provide a manufacturing method of a semiconductor device including a semiconductor substrate, the manufacturing method of the semiconductor device including a sticking for sticking a protection tape to a first surface of the semiconductor substrate, a first grinding for supporting the protection tape and grinding a second surface of the semiconductor substrate that is a surface on the opposite side of the first surface, a protection tape cutting for supporting the second surface of the semiconductor substrate and flattening the protection tape, and a second grinding for supporting the protection tape and grinding the second surface of the semiconductor substrate. In the second grinding, in order to leave a convex part in an outer circumference of the semiconductor substrate, an inside of the convex part may be ground.

A floor polishing or grinding pad assembly is provided. In one aspect, a polishing or grinding pad assembly employs a flexible pad, a reinforcement layer or ring, and multiple floor-contacting tools such as abrasive disks. In another aspect, the reinforcement layer includes a wavy or undulating internal edge shape. A further aspect includes an inner ring edge having radially extending slots between pairs of radially enlarged tool mounting peaks. Still another aspect includes an insulator or spacer between a head of an abrasive tool and a reinforcement ring.

A coated steel sheet capable of implementing a rich three-dimensional effect, various patterns, and a natural esthetic sense and includes a steel sheet material which has a concave portion and a convex portion formed on one surface and a coating layer which is formed on the one surface by being coated on a coating material, wherein, as the coating layer is polished, at least a portion of the convex portion is exposed to an outside, and the concave portion is filled with the coating material.

A coated steel sheet capable of implementing a rich three-dimensional effect, various patterns, and a natural esthetic sense and includes a steel sheet material which has a concave portion and a convex portion formed on one surface and a coating layer which is formed on the one surface by being coated on a coating material, wherein, as the coating layer is polished, at least a portion of the convex portion is exposed to an outside, and the concave portion is filled with the coating material.

There is provided a processing apparatus that polishes the back surface side of a wafer on which devices are formed on the front surface side. The processing apparatus includes a chuck table that holds the wafer and rotates and a polishing unit that forms scratches on the back surface side of the wafer while polishing the back surface side of the wafer. The processing apparatus includes also a scratch determining unit that determines whether or not the scratches exist on the back surface side of the wafer polished by the polishing unit and an informing unit that informs that a region in which the scratches do not exist is included in the wafer when a region for which it has been determined that the scratches do not exist by the scratch determining unit is included in the wafer.