The present invention relates to a chemical mechanical polishing (CMP) apparatus for polishing a workpiece, such as a metal body, to a mirror finish. The chemical mechanical polishing apparatus includes: a polishing pad (2) having an annular polishing surface (2a) which has a curved vertical cross-section; a workpiece holder (11) for holding a workpiece (W) having a polygonal shape; a rotating device (15) configured to rotate the workpiece holder (11) about an axis of the workpiece (W); a pressing device (14) configured to press a periphery of the workpiece (W) against the annular polishing surface (2a); and an operation controller (25) configured to change a speed at which the rotating device (15) rotates the workpiece (W) according to a rotation angle of the workpiece (W). The pressing device (14) is disposed more inwardly than the workpiece holder (11) in a radial direction of the polishing table (3).

A method for manufacturing a semiconductor wafer, including: a chamfering step of grinding at least a periphery of a wafer to form a chamfered portion having a wafer edge portion and a wafer notch portion; a double-side polishing step; a mirror-surface chamfering step; and a mirror polishing step, wherein the mirror-surface chamfering step includes: a first mirror-surface chamfering process of polishing the wafer notch portion in the chamfered portion before the double-side polishing step; and a second mirror-surface chamfering process of polishing the wafer notch portion and the wafer edge portion after the double-side polishing step, and a polishing rate of the wafer notch portion in the second mirror-surface chamfering process is smaller than a polishing rate of the wafer notch portion in the first mirror-surface chamfering process.

An apparatus for detecting an abnormality in polishing of an edge portion of a substrate is provided. The apparatus includes: a substrate holder configured to rotate the substrate; a pressing device configured to press a polishing tool against the edge portion of the substrate to polish the edge portion; a measuring device configured to measure a position of the polishing tool relative to a surface of the substrate; and a controller configured to determine an amount of polishing of the substrate from the position of the polishing tool, calculate a polishing rate from the amount of polishing of the substrate, and judge that an abnormality in polishing of the edge portion of the substrate has occurred if the polishing rate is out of a predetermined range.

The present disclosure provides an apparatus and a method for polishing a semiconductor substrate in semiconductor device manufacturing. The apparatus can include: a carrier configured to hold the substrate; a polishing pad configured to polish a first surface of the substrate; a chemical mechanical polishing (CMP) slurry delivery arm configured to dispense a CMP slurry onto the first surface of the substrate; and a pad conditioner configured to condition the polishing pad. In some embodiments, the pad conditioner can include: a conditioning disk configured to scratch the polishing pad; a conditioning arm configured to rotate the conditioning disk; a plurality of magnetic screws configured to secure the conditioning disk onto the conditioning arm and including a respective plurality of screw heads; and a plurality of blocking devices respectively positioned beneath the plurality of screw heads and configured to block debris particles from entering exiting a respective plurality of screw holes.

Described are various coolant and/or lubricating compositions. Also described are various methods for grinding glass that employ such a coolant and/or lubricating composition. Such compositions may find use in the grinding of glass, such as automotive glass, flat glass, ophthalmic glass, precision ophthalmic glass, ceramics, quartz, solar glass, precision optical glass, lens glass, architectural glass, curtain wall glass, appliance glass, electronic-device glass, and/or various plastics.

Described are various coolant and/or lubricating compositions. Also described are various methods for grinding glass that employ such a coolant and/or lubricating composition. Such compositions may find use in the grinding of glass, such as automotive glass, flat glass, ophthalmic glass, precision ophthalmic glass, ceramics, quartz, solar glass, precision optical glass, lens glass, architectural glass, curtain wall glass, appliance glass, electronic-device glass, and/or various plastics.

In order to reduce edge defects efficiently and sufficiently, a method for manufacturing a SiC epitaxial wafer according to the present invention is a method for manufacturing a SiC epitaxial wafer that forms a SiC epitaxial layer on top of a SiC single crystal substrate having an off angle, and includes a rough polishing step for subjecting an outer circumferential edge on a starting side of step-flow growth in the SiC single crystal substrate to rough polishing before forming the SiC epitaxial layer; and a final polishing step for further polishing for finish.

To perform both buff cleaning of a substrate surface and cleaning of an edge part of the substrate, a cleaning module includes: a rotary table configured to support a circular substrate and have a diameter smaller than a diameter of the substrate; a buff cleaning portion configured to buff clean a front side of the substrate while contacting the front side of the substrate supported by the rotary table; a buff cleaning portion movement mechanism configured to move the buff cleaning portion with respect to the substrate; a buff cleaning portion control mechanism configured to control an operation of the buff cleaning portion movement mechanism; and an edge cleaning portion configured to clean an edge part of the substrate while contacting the edge part of the substrate supported by the rotary table.

The present invention relates to a polishing apparatus and a polishing method for polishing a substrate, such as a wafer, and more particularly to a polishing apparatus and a polishing method for polishing an edge portion of a wafer with use of a polishing tape.

The polishing apparatus includes a substrate holder (1) configured to hold and rotate a substrate (W), and a polishing unit (7) configured to polish an edge portion of the substrate (W) with use of a polishing tape (5). The polishing unit (7) includes: a disk head (12) having a circumferential surface for supporting the polishing tape (5); and a head moving device (50) configured to move the disk head (12) in a tangential direction of the substrate (W) and to bring the polishing tape (5) on the circumferential surface of the disk head (12) into contact with the edge portion of the substrate (W).

A polishing apparatus polishes a periphery of a substrate. This polishing apparatus includes a rotary holding mechanism configured to hold the substrate horizontally and rotate the substrate, plural polishing head assemblies provided around the substrate, plural tape supplying and recovering mechanisms configured to supply polishing tapes to the plural polishing head assemblies and recover the polishing tapes from the plural polishing head assemblies, and plural moving mechanisms configured to move the plural polishing head assemblies in radial directions of the substrate held by the rotary holding mechanism. The tape supplying and recovering mechanisms are located outwardly of the plural polishing head assemblies in the radial directions of the substrate, and the tape supplying and recovering mechanisms are fixed in position.