An edge finishing apparatus includes a surface, a fluid delivery device configured to deliver at least one magnetorheological polishing fluid (MPF) ribbon to the at least one well, at least one magnet placed adjacent to the surface to selectively apply a magnetic field in a vicinity of the surface, and at least one holder placed in opposing relation to the surface, the at least one holder being configured to support at least one article such that an edge of the at least one article can be selectively immersed in the MPF ribbon delivered to the at least one well.

A polishing method of polishing a substrate includes moving a stopper from a predetermined initial position by a distance corresponding to a target polishing amount of a substrate. The method further includes pressing a polishing tool against the substrate by a pressing member while rotating the substrate. The method further includes polishing the substrate until a positioning member which moves together with the pressing member is brought into contact with the stopper.

An apparatus for polishing the edges and sides of granite and other stones includes a hollow rectangular base for sliding along a stone surface, a yoke mounted on the base, a disc polisher pivotally mounted in the yoke for rotation around a horizontal axis between a variety of polishing orientations, and an indexing mechanism for releasably locking the polisher in such orientations.

An apparatus for polishing the edges and sides of granite and other stones includes a hollow rectangular base for sliding along a stone surface, a yoke mounted on the base, a disc polisher pivotally mounted in the yoke for rotation around a horizontal axis between a variety of polishing orientations, and an indexing mechanism for releasably locking the polisher in such orientations.

There is disclosed a grinding apparatus for fabrication of a liquid crystal display device that is adaptive for improving the adsorption defect of a substrate onto a substrate stage. A grinding apparatus for fabrication of a liquid crystal display device disclosed in the present invention includes a plurality of substrate stage configured to make a linearly bi-directional movement; first and second grinding parts disposed in a series at an area to which the substrate stage moves; first to third aligning parts disposed at both ends of the first and second grinding parts and therebetween; and first and second cleaning parts disposed between the first and second grinding parts and the first and second aligning parts so as to clean the substrate stage.

The present invention relates to a polishing apparatus and a polishing method for polishing a substrate, such as a wafer, and more particularly to a polishing apparatus and a polishing method for polishing an edge portion of a wafer with use of a polishing tape.

The polishing apparatus includes a substrate holder (1) configured to hold and rotate a substrate (W), and a polishing unit (7) configured to polish an edge portion of the substrate (W) with use of a polishing tape (5). The polishing unit (7) includes: a disk head (12) having a circumferential surface for supporting the polishing tape (5); and a head moving device (50) configured to move the disk head (12) in a tangential direction of the substrate (W) and to bring the polishing tape (5) on the circumferential surface of the disk head (12) into contact with the edge portion of the substrate (W).

An object of the invention is to provide a calibration apparatus which enables the pressing force of the polishing pad to be adjusted by a simple method without the need of removing a stage on which a substrate can be placed.

One embodiment of the invention provides a calibration apparatus for a bevel polishing system for polishing a bevel portion of a substrate, comprising: a load measuring device capable of measuring a pressing load from a polishing pad of the bevel polishing system; and a base plate capable of having the load measuring device placed thereon, wherein the base plate is capable of being fixed on a vacuum suction table which is capable of having a substrate placed thereon.

A method includes partially forming a top chamfer on a disc substrate with a first brush, and partially forming a bottom chamfer on the disc substrate with a second brush. The method also includes completing the formation of the bottom chamfer with the first brush, and completing the formation of the top chamfer with the second brush.

A method for processing a silicon wafer, the method including cutting an ingot to form a wafer, extracting from measured shape data a cross-sectional profile, the cross-sectional profile passing through the center of the wafer and being aligned with a cutting direction of an ingot, interpolating the shape data with a fixed and pre-determined step size, fitting a first second-degree polynomial to the cross-sectional profile, determining a residual profile by subtracting the polynomial from the cross-sectional profile, fitting a second second-degree polynomial to the residual profile using a sliding window of pre-determined width to determine a position, height, and curvature of each peak and valley of the residual profile, determining a waviness parameter based on the position, height, and curvature of each peak and valley of the residual profile, and further processing the wafer based on the waviness parameter and a predetermined waviness threshold.

A polishing apparatus 100 includes a holding stage 4 that holds a central portion of a back surface of a substrate W, a motor M1 that rotates the holding stage 4, a front surface nozzle 36 that feeds a rinse liquid to a front surface of the substrate W, a back surface nozzle 37 that feeds the rinse liquid to a back surface of the substrate W, a rinse liquid control section 110 that feeds the rinse liquid through the back surface nozzle 37 after a preset time elapses since the start of feeding of the rinse liquid through the front surface nozzle 36 and a polishing head assembly 1A that polishes a peripheral portion of the substrate installed on the holding stage 4 after the rinse liquid control section 110 feeds the rinse liquid to the substrate W.