A method of manufacturing a semiconductor device, according to an embodiment, includes: bonding a semiconductor substrate having a first surface including a pattern region in which a device pattern is provided, a second surface opposite to the first surface, and a bevel portion located on the periphery of the first surface and the second surface, and an adhesive layer formed continuously on the first surface and the bevel portion, to a support substrate having a third surface including a release layer region in which a release layer is formed, so that the first surface and the third surface are bonded via the adhesive layer; and removing at least the bevel portion and a portion of the adhesive layer formed in the bevel portion from the semiconductor substrate, in a state the semiconductor substrate and the support substrate are bonded together with the adhesive layer.

A method of processing a wafer includes forming a bonded wafer assembly by bonding one of opposite surfaces of a first wafer to a second wafer, the first wafer having a device region and an outer circumferential excessive region, applying a laser beam to the first wafer while positioning a focused spot of the laser beam radially inwardly from the outer circumferential edge of the first wafer, on an inclined plane that is progressively closer to the one of the opposite surfaces of the first wafer toward the outer circumferential edge, thereby forming a separation layer shaped as a side surface of a truncated cone, grinding the first wafer from the other one of the opposite surfaces thereof to thin down the first wafer to a predetermined thickness, and detecting whether or not the outer circumferential excessive region has been removed from the first wafer.

A method of processing a wafer by processing a first wafer having a beveled part on an outer circumferential edge thereof includes holding, on a first holding surface of a first chuck table, a second surface side of the first wafer that is opposite a first surface side thereof such that the first surface side of the first wafer is exposed and after the second surface side of the first wafer has been held, processing the outer circumferential edge of the first wafer to remove the beveled part on the outer circumferential edge of the first wafer in its entirety or a portion of the beveled part on the first surface side. The first wafer is progressively smaller in diameter from the first surface side toward the second surface side in a region of the outer circumferential edge of the first wafer that has been processed.

Disclosed are a wafer edge polishing drum, wafer edge polishing equipment including the same, and a wafer edge polishing method. The wafer edge polishing drum includes a plurality of first polishing units provided at a first body portion, a plurality of second polishing units provided at a second body portion located below the first body portion, a driving unit configured to rotate the first body portion and the second body portion, a plurality of third polishing units provided at least at one of the first body portion or the second body portion, and a controller. Each of the first to third polishing units includes a central shaft, a weight connected to one side of the central shaft, and a polishing portion connected to the opposite side of the central shaft. The controller is configured to adjust a distance between the central shaft and the weight.

A substrate processing apparatus includes a chuck configured to hold a substrate horizontally; a processing unit configured to press a processing tool against an outer periphery of the substrate held by the chuck to process the substrate; and a lower cup configured to collect a processing residue falling from the substrate over an entire circumference of the substrate. The lower cup is provided with a discharge opening through which the processing residue is discharged.