Patent classifications
B24B9/06
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
Polishing uniformity of a surface to be polished of a substrate is improved by appropriately according with a state of the surface to be polished during polishing. A substrate processing apparatus includes a table 100 for supporting a substrate WF, a pad holder 226 for holding a polishing pad 222 for polishing the substrate WF supported by the table 100, an elevating mechanism for elevating the pad holder 226 with respect to the substrate WF, a swing mechanism for swinging the pad holder 226 in a radial direction of the substrate WF, supporting members 300A and 300B for supporting the polishing pad 222 swung to outside the table 100 by the swing mechanism, and driving mechanisms 310 and 320 for adjusting at least one of a height and a distance to the substrate WF of the supporting member 300 while polishing the substrate WF.
Angle Polishing Systems and Methods for Multi-Ferrule Optical Connectors
Systems and methods for angle polishing of the end faces of a plurality of optical connectors are provided. Systems are provided that include a connector defining a longitudinal axis, and at least two ferrules mounted with respect to the connector and arranged in a side-by-side orientation. The end faces of the connectors are movable relative to the connector and such movement facilitates lateral orientation of the angle polished end faces of the ferrules relative to the connector when in the mating position. Various mechanisms and methods for facilitating movement of the ferrules relative to the connector are disclosed to achieve the desired lateral polish orientation of the ferrule end faces.
Angle Polishing Systems and Methods for Multi-Ferrule Optical Connectors
Systems and methods for angle polishing of the end faces of a plurality of optical connectors are provided. Systems are provided that include a connector defining a longitudinal axis, and at least two ferrules mounted with respect to the connector and arranged in a side-by-side orientation. The end faces of the connectors are movable relative to the connector and such movement facilitates lateral orientation of the angle polished end faces of the ferrules relative to the connector when in the mating position. Various mechanisms and methods for facilitating movement of the ferrules relative to the connector are disclosed to achieve the desired lateral polish orientation of the ferrule end faces.
METHOD FOR PREPARING SILICON CARBIDE WAFER AND SILICON CARBIDE WAFER
A method for preparing a SiC ingot includes: disposing a raw material and a SiC seed crystal facing each other in a reactor having an internal space; subliming the raw material by controlling a temperature, a pressure, and an atmosphere of the internal space; growing the SiC ingot on the seed crystal; and collecting the SiC ingot after cooling the reactor. The wafer prepared from the ingot, which is prepared from the method, generates cracks when an impact is applied to a surface of the wafer, the impact is applied by an external impact source having mechanical energy, and a minimum value of the mechanical energy is 0.194 J to 0.475 J per unit area (cm.sup.2).
POLISHING DEVICE
A polishing device includes a bearing mechanism including a bearing plate configured to carry wafers and drive the wafer to rotate and a first polishing mechanism including at least one group of rotatable first polishing wheels. Each first polishing wheel is formed with a first polishing groove extending along a circumferential direction. Each group includes two first polishing wheels. The two first polishing wheels in each group are arranged symmetrically with respect to the bearing plate and rotation axes of the two first polishing wheels are coplanar with a rotation axis of the bearing plate. The two first polishing wheels in each group are capable of moving close to or away from the wafer, so that an inner sidewall of the first polishing groove is pressed against or moves away from the wafer.
Method of producing silicon elements and integrated circuits
In a method of manufacturing silicon elements a part having a cross section with four straight sides and four arcuate portions each connecting two of the straight skies with one another and a rotatable abrasive tool which has a circular abrasive working layer composed of abrasive particles are provided, the tool is rotated around a central axis of the part having a cross section with the four straight sides and the four arcuate portions each connecting two of the straight sides with one another, in contact with the four arcuate portions with simultaneous displacement of the tool along an axis of the part to remove outer layers of the outer portions and to finely machine underlying arcuate surfaces of the part, and the part is cut transversely to produce silicone elements.
METHOD OF FORMING TRUER
A method of forming a truer in a truing where a groove of a grinding wheel used for grinding a chamfer portion of a wafer is formed by a truer having a disc-shape, wherein the method comprising: a process A for adjusting a diameter and a rough shape of the truer by a master grinding wheel for forming the truer; and a process B for forming an edge of the truer into a target shape, wherein the process A and the process B are performed by a plurality of master grooves having different shapes from each other, the plurality of master grooves being provided with the master grinding wheel or the process A and the process B are performed by a plurality of portions having different shapes from each other in at least one of the plurality of master grooves provided with the master grinding wheel.
Display device and method for manufacturing the same
A display device including a substrate including: a top surface, a bottom surface, and a plurality of side surfaces connecting the top surface and the bottom surface; a signal line disposed on the top surface; a sidewall electrode in electrical contact with the signal line and disposed on a first side surface of the side surfaces; and a connection electrode in electrical contact with the sidewall electrode and disposed on the first side surface.
Silicon carbide single crystal substrate and method for manufacturing the same
A silicon carbide single crystal substrate includes a first main surface, a second main surface, and a circumferential edge portion. The second main surface is opposite to the first main surface. The circumferential edge portion connects the first main surface and the second main surface. The circumferential edge portion has a linear orientation flat portion, a first arc portion having a first radius, and a second arc portion connecting the orientation flat portion and the first arc portion and having a second radius smaller than the first radius, when viewed along a direction perpendicular to the first main surface.
Method and apparatus for performing a polishing process in semiconductor fabrication
The present disclosure provides an apparatus for fabricating a semiconductor device. The apparatus includes a polishing head that is operable to perform a polishing process to a wafer. The apparatus includes a retaining ring that is rotatably coupled to the polishing head. The retaining ring is operable to secure the wafer to be polished. The apparatus includes a soft material component located within the retaining ring. The soft material component is softer than silicon. The soft material component is operable to grind a bevel region of the wafer during the polishing process. The apparatus includes a spray nozzle that is rotatably coupled to the polishing head. The spray nozzle is operable to dispense a cleaning solution to the bevel region of the wafer during the polishing process.