Disclosed is a semiconductor wafer processing method wherein, a thin disc-like wafer is manufactured by slicing a semiconductor single crystal ingot (slicing step), a planarized coating layer is formed by applying a curable material to the whole first surface of the wafer (coating layer forming step), and the coating layer is cured (coating layer curing step). A wafer second surface on the reverse side of the first surface is flatly grind by means of a grinding apparatus, the coating layer is removed from the first surface of the wafer. Furthermore, the first surface of the wafer is flatly ground by means of the grinding apparatus. The surface height of the first surface of the wafer after the slicing step and before the coating layer forming step is subjected to frequency analysis, and the coating layer forming step and the coating layer curing step are repeated a plurality of times.

A method for slicing a workpiece using a wire saw which includes wire row formed by winding a fixed abrasive grain wire having abrasive grains secured to a surface around a plurality of grooved rollers, the method including feeding a columnar workpiece to wire row for slicing while allowing fixed abrasive grain wire to reciprocate and travel in an axial direction, thereby slicing the workpiece at a plurality of positions aligned in axial direction at same time. After end of slicing the workpiece, the fixed abrasive grain wire is rewound from position at the end of slicing the workpiece by length of or more and or less of the fixed abrasive grain wire fed's length from start of slicing when the workpiece and wire row begin to contact with each other to the end of slicing the workpiece, and then the workpiece is drawn out of wire row.

A wire saw abnormality diagnosis device and a wire saw abnormality diagnosis method are provided. The abnormality diagnosis device includes: a diagnosis mode executer that executes a first diagnosis mode, a second diagnosis mode, and a third diagnosis mode before the cutting; a data group acquirer that acquires a first data group, a second data group, and a third data group for pluralities of data items indicating operating states of the wire saw; a deviation information calculator that calculates deviation information relating to deviations derived by comparing a first reference data group, a second reference data group, and a third reference data group with the first data group, the second data group, and the third data group for the pluralities of data items; and a determiner that determines presence or absence of an abnormality in the wire saw based on the calculated deviation information.

This wire saw machine having a dust collecting apparatus comprises a main roller for moving a wire by rotation; a first pulley system including a first upper dust collecting roller, a first lower dust collecting roller, and a first support roller; a second pulley system including a second upper dust collecting roller, a second lower dust collecting roller, and a second support roller; and a dust collecting unit which is provided under the first pulley system and the second pulley system to collect foreign substances that escape from the first pulley system and the second pulley system.

Semiconductor wafers are produced from a workpiece by means of a wire saw, by feeding the workpiece through an arrangement of wires tensioned between wire guide rollers and divided into wire groups, the wires moving in a running direction producing kerfs as wires engage the workpiece. For each of the wire groups, a placement error of the kerfs of the wire groups determined, and for each of the wire groups compensating movements of the wires of the wire group are induced as a function of the placement error, in a direction perpendicular to the running direction of the wires during feeding of the workpiece through the arrangement of wires, by activating at least one drive element.

Before bonding abrasive grain to a core wire, a palladium coating is applied to the surface of the abrasive grain. The palladium coating is formed as a sea on the surface of the diamond grains. In other words, the palladium coating covers the surface of the diamond grains so that the entirety thereof is continuous. Moreover, the palladium coating does not completely cover the diamond grains, and a diamond exposed portion is provided by the palladium coating not being applied on a portion thereof. The exposed diamond portion is formed as an island on the surface of the abrasive grain. In other words, a plurality of diamond exposed portions are formed as islands separated from each other.

A method for slicing workpiece reusing a wire used for previous slicing of a workpiece to slice a subsequent workpiece by which the workpiece is pressed against a wire row and sliced, the wire row being formed of the wire spirally wound between a plurality of wire guides and travels in an axial-direction, where wire tension at the time of slicing the workpiece is set to a value in the range of 87 to 95% of wire tension in the previous slicing of the workpiece, a new wire supply amount at the time of slicing the workpiece is set to a value in the range of 125% or more of a new wire supply amount in the previous slicing of the workpiece, and the wire is reused to slice the subsequent workpiece.

A method of shaping a laminated glass structure includes providing the laminated glass structure comprising a flexible glass sheet having a thickness of no greater than about 0.3 mm laminated to a non-glass substrate by an adhesive layer. The flexible glass structure and adhesive layer are ground using a first tool to remove glass material. The non-glass substrate is cut with a second tool different from the first tool through a kerf formed through the flexible glass structure thereby forming a shaped laminated glass structure. A glass edge strength of a cut edge of the shaped laminated glass structure is at least about 20 MPa.

An electronic component removal device comprising a cutting wire routed through a cutting region configured to receive an electronic component coupled to a substrate. The electronic component removal device can also include a leading actuator coupled to a leading end of the cutting wire to cause movement of the cutting wire in a cutting direction at a cutting speed. The electronic component removal device can further include a trailing resistance device coupled to a trailing end of the cutting wire to resist movement of the cutting wire in the cutting direction with a variable resistance. In addition, the electronic component removal device can include a leading tension sensor to sense a leading tension in the cutting wire between the cutting region and the leading actuator. The trailing resistance device can resist movement of the cutting wire with a resistance that varies based on the leading tension in the cutting wire.

The present invention is a fixed-abrasive-grain wire including a core wire and abrasive grains fixed on a surface of the core wire, wherein an abrasive grain density is 1200 grains/mm.sup.2 or more, where the abrasive grain density is the number of the abrasive grains per unit area on the surface of the core wire, and 2% or less of all distances between centroids of the abrasive grains are equal to or shorter than an average circle equivalent diameter of the whole abrasive grains. There can be provided a fixed-abrasive-grain wire, a wire saw, and a method for slicing a workpiece that can suppress meandering of the fixed-abrasive-grain wire during slicing a workpiece and improve TTV and warp of wafers sliced from the workpiece.