An accuracy of detecting a slip out of a substrate from a top ring is improved. A polishing unit 300 includes a polishing table 350, a top ring 302, a light emitting member 371, a slip-out detector 370, and an elimination mechanism 380. A polishing pad 352 that polishes a substrate WF is attached to the polishing table 350. The top ring 302 holds the substrate WF to press the substrate WF against the polishing pad 352. The light emitting member 371 emits a light to a detection area 372 on the polishing pad 352. The slip-out detector 370 detects a slip out of the substrate WF from the top ring 302 based on the light reflected from the detection area 372. The elimination mechanism 380 eliminates a polishing liquid flowing into the detection area 372.

A polishing apparatus includes: a plurality of polishing heads for holding a wafer, a polishing pad for polishing the wafer, a rotatable turn table having the polishing pad attached thereto, a turn table driving mechanism for rotating the turn table, a plurality of wafer-detecting sensors for detecting coming off of the wafer from the polishing head during polishing, wherein the polishing apparatus has the wafer-detecting sensor disposed above peripheral portions of the respective polishing heads and on each downstream side in a rotation direction of the turn table with respect to the respective polishing heads. The polishing apparatus can detect coming off of a wafer from a polishing head during polishing more rapidly, and can prevent a breakage of the wafer thereby.

An apparatus for chemical mechanical polishing of a wafer includes a process chamber and a rotatable platen disposed inside the process chamber. A polishing pad is disposed on the platen and a wafer carrier is disposed on the platen. A slurry supply port is configured to supply slurry on the platen. A process controller is configured to control operation of the apparatus. A set of microphones is disposed inside the process chamber. The set of microphones is arranged to detect sound in the process chamber during operation of the apparatus and transmit an electrical signal corresponding to the detected sound. A signal processor is configured to receive the electrical signal from the set of microphones, process the electrical signal to enable detection of an event during operation of the apparatus, and in response to detecting the event, transmit a feedback signal to the process controller. The process controller is further configured to receive the feedback signal and initiate an action based on the received feedback signal.

A semiconductor manufacturing apparatus and a method of manufacturing semiconductor device are provided. The semiconductor manufacturing apparatus includes a loading unit configured to load a wafer having a first surface to which a die attach film is attached through an ultraviolet sensitive layer, an ultraviolet light source configured to irradiate ultraviolet light onto the first surface of the wafer attached to the die attach film to weaken adhesive strength of the ultraviolet sensitive layer, and a camera configured to generate a wafer image by capturing ultraviolet light transmitted through a second surface of the wafer opposite to the first surface of the wafer.

A silicon wafer single-side polishing method that can significantly improve the stepped minute defect occurrence rate is provided. The silicon wafer single-side polishing method comprises: a first polishing step of performing polishing on one side of a silicon wafer under a first polishing condition; and a second polishing step of performing polishing on the silicon wafer under a second polishing condition in which at least one of an applied pressure and a relative speed in the first polishing condition is changed, after the first polishing step, wherein a polishing rate ratio according to the first polishing condition is higher than a polishing rate ratio according to the second polishing condition.

Exemplary methods for detecting substrate slippage include sweeping a first sensor and a second sensor of an in-situ monitoring system across the substrate as the substrate undergoes polishing with a rotatable platen. A first sequence of signal values from the first sensor and a second sequence of signal values from the second sensor include a signal strength relative to the thickness of the layer. For each signal value of at least some of the first sequence of signal values and second sequence of signal values, the method may include determining a first and second position on the substrate respective. The method may also include activating a slippage alert if: the signal strength varies by 30% or more from the first sequence of signal values to the second sequence of signal values, a position on the substrate for the second signal value cannot be determined, or a combination thereof.

In an embodiment, a system includes: a pad comprising a first side and a second side opposite the first side, wherein the first side is configured to receive a wafer during chemical mechanical planarization (CMP), and a platen adjacent the pad along the second side, wherein the platen comprises a suction opening that interfaces with the second side; a pump configured to produce suction at the suction opening to adhere the second side to the platen; and a sensor configured to collect sensor data characterizing a uniformity of adherence between the pad and the platen, wherein the pump is configured to produce the suction at the suction opening based on the sensor data.

A polishing apparatus capable of enabling a user to know a frequency and a trend of a retry operation of retrying a substrate release operation is disclosed. The polishing apparatus includes: a substrate holder configured to press a substrate against a polishing pad; a fluid ejection system configured to eject a fluid into a gap between the substrate and a flexible membrane for releasing the substrate from a substrate holding surface; an operation controller configured to instruct the fluid ejection system to perform a retry operation of ejecting the fluid again in a case where the release of the wafer has failed; and a monitoring device configured to store a historical information of the retry operation.

A method and system includes: a pad comprising a first side and a second side opposite the first side, wherein the first side is configured to receive a wafer during chemical mechanical planarization (CMP), and a platen adjacent the pad along the second side, wherein the platen comprises a suction opening that interfaces with the second side; a pump configured to produce suction at the suction opening to adhere the second side to the platen; and a sensor configured to collect sensor data characterizing a uniformity of adherence between the pad and the platen, wherein the pump is configured to produce the suction at the suction opening based on the sensor data.

A method and apparatus for insitu adjustment of wafer slip detection during work piece polishing are disclosure. In one aspect, a chemical mechanical planarization (CMP) system, includes: a carrier configured to retain a substrate, a platen supporting a polishing pad, and a slip sensor configured to generate a signal indicative of a characteristic of a surface of the polishing pad. The system further includes a processor configured to: receive the signal from the slip sensor, calibrate a steady-state value of the signal when the CMP system is in a steady-state condition, compare the signal received from the slip sensor to the calibrated steady-state value during CMP polishing, and detect wafer slip in response to the signal received from the slip sensor during the CMP polishing differing from the calibrated steady-state value by more than a threshold value.