B24B37/013

POLISHING PAD AND POLISHING METHOD

A polishing pad is provided. The polishing pad includes a polishing layer and a detection window. The detection window is disposed in the polishing layer. The modulus of the detection window is larger than the modulus of the polishing layer at 30° C., and the modulus of the detection window is smaller than the modulus of the polishing layer at 50° C.

POLISHING PAD AND POLISHING METHOD

A polishing pad is provided. The polishing pad includes a polishing layer and a detection window. The detection window is disposed in the polishing layer. The modulus of the detection window is larger than the modulus of the polishing layer at 30° C., and the modulus of the detection window is smaller than the modulus of the polishing layer at 50° C.

CALIBRATION METHOD FOR ACOUSTIC SENSOR
20230194477 · 2023-06-22 ·

A method in which an acoustic sensor disposed in a polishing apparatus can be accurately calibrated is disclosed. In this method, polishing sounds of a substrate are acquired using an acoustic sensor; and then at least two distinctive sounds, having distinctive frequencies respectively, are selected from the acquired polishing sounds. Further, the at least two distinctive sounds are output from a sound source coupled to any of a polishing table, the acoustic sensor, and a substrate holder to cause the at least two distinctive sounds to be input to the acoustic sensor. Next, output values of the acoustic sensor are calibrated, such that the output values of the acoustic sensor relative to the at least two distinctive sounds come within an allowable range.

Thickness measurement of substrate using color metrology
11682114 · 2023-06-20 · ·

A metrology system for obtaining a measurement representative of a thickness of a layer on a substrate includes a camera positioned to capture a color image of at least a portion of the substrate. A controller is configured to receive the color image from the camera, store a predetermined path in a coordinate space of at least two dimension including a first color channel and a second color channel, store a function that provides a value representative of a thickness as a function of a position on the predetermined path, determine a coordinate of a pixel in the coordinate space from color data in the color image for the pixel, determine a position of a point on the predetermined path that is closest to the coordinate of the pixel, and calculate a value representative of a thickness from the function and the position of the point on the predetermined path.

Thickness measurement of substrate using color metrology
11682114 · 2023-06-20 · ·

A metrology system for obtaining a measurement representative of a thickness of a layer on a substrate includes a camera positioned to capture a color image of at least a portion of the substrate. A controller is configured to receive the color image from the camera, store a predetermined path in a coordinate space of at least two dimension including a first color channel and a second color channel, store a function that provides a value representative of a thickness as a function of a position on the predetermined path, determine a coordinate of a pixel in the coordinate space from color data in the color image for the pixel, determine a position of a point on the predetermined path that is closest to the coordinate of the pixel, and calculate a value representative of a thickness from the function and the position of the point on the predetermined path.

Filtering during in-situ monitoring of polishing
11679466 · 2023-06-20 · ·

A method of controlling polishing includes polishing a substrate, monitoring the substrate during polishing with an in-situ monitoring system, filtering a signal from the monitoring system to generate a filtered signal, and determining at least one of a polishing endpoint or an adjustment for a polishing rate from the filtered signal. The filtering includes modelling a plurality of periodic disturbances at a plurality of different frequencies using a plurality of disturbance states, modelling an underlying signal using a plant state, and applying a linear prediction filter to the plant state and the plurality of disturbance states to generate a filtered signal representing the underlying signal.

Filtering during in-situ monitoring of polishing
11679466 · 2023-06-20 · ·

A method of controlling polishing includes polishing a substrate, monitoring the substrate during polishing with an in-situ monitoring system, filtering a signal from the monitoring system to generate a filtered signal, and determining at least one of a polishing endpoint or an adjustment for a polishing rate from the filtered signal. The filtering includes modelling a plurality of periodic disturbances at a plurality of different frequencies using a plurality of disturbance states, modelling an underlying signal using a plant state, and applying a linear prediction filter to the plant state and the plurality of disturbance states to generate a filtered signal representing the underlying signal.

SYSTEM AND METHOD FOR MONITORING CHEMICAL MECHANICAL POLISHING
20230182257 · 2023-06-15 ·

An apparatus for chemical mechanical polishing of a wafer includes a process chamber and a rotatable platen disposed inside the process chamber. A polishing pad is disposed on the platen and a wafer carrier is disposed on the platen. A slurry supply port is configured to supply slurry on the platen. A process controller is configured to control operation of the apparatus. A set of microphones is disposed inside the process chamber. The set of microphones is arranged to detect sound in the process chamber during operation of the apparatus and transmit an electrical signal corresponding to the detected sound. A signal processor is configured to receive the electrical signal from the set of microphones, process the electrical signal to enable detection of an event during operation of the apparatus, and in response to detecting the event, transmit a feedback signal to the process controller. The process controller is further configured to receive the feedback signal and initiate an action based on the received feedback signal.

SYSTEM AND METHOD FOR MONITORING CHEMICAL MECHANICAL POLISHING
20230182257 · 2023-06-15 ·

An apparatus for chemical mechanical polishing of a wafer includes a process chamber and a rotatable platen disposed inside the process chamber. A polishing pad is disposed on the platen and a wafer carrier is disposed on the platen. A slurry supply port is configured to supply slurry on the platen. A process controller is configured to control operation of the apparatus. A set of microphones is disposed inside the process chamber. The set of microphones is arranged to detect sound in the process chamber during operation of the apparatus and transmit an electrical signal corresponding to the detected sound. A signal processor is configured to receive the electrical signal from the set of microphones, process the electrical signal to enable detection of an event during operation of the apparatus, and in response to detecting the event, transmit a feedback signal to the process controller. The process controller is further configured to receive the feedback signal and initiate an action based on the received feedback signal.

PAD CONDITIONER CUT RATE MONITORING

An apparatus for chemical mechanical polishing includes a platen having a surface to support a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, a pad conditioner to hold a conditioning disk against the polishing surface, an in-situ polishing pad thickness monitoring system, and a controller. The controller is configured to store data associating each of a plurality of conditioner disk products with a respective threshold value, receive an input selecting a conditioner disk product from the plurality of conditioner disk products, determine a particular threshold value associated with the selected conditioner disk product, receive a signal from the monitoring system, generate a measure of a pad cut rate from the signal, and generate an alert if the pad cut rate falls beyond the particular threshold value.