The substrate polishing apparatus capable of measuring a film thickness of a substrate with high accuracy without decreasing a transmittance of light when measuring the film thickness of a substrate being polished is disclosed. The substrate polishing apparatus includes: a stage; a polishing head configured to hold a polishing pad; a polishing-liquid supply nozzle; a film-thickness measuring head; a spectrum analyzer; and a head nozzle to which the film-thickness measuring head is attached. The head nozzle includes a first flow-passage system and a second flow-passage system each configured to form a flow of liquid across an optical path of light and reflected light, the first flow-passage system has an aperture located on the optical path, the second flow-passage system has a liquid outlet port and a liquid suction port located at both sides of the aperture.

A method and apparatus for polishing a substrate is disclosed herein. More specifically, the apparatus relates to an integrated CMP system for polishing substrates. The CMP system has a polishing station configured to polish substrates. A spin rinse dry (SRD) station configured to clean and dry the substrates. A metrology station configured to measure parameters of the substrates. A robot configured to move the substrate in to and out of the SRD station. And an effector rinse and dry (EERD) station configured to clean and dry an end effector of the robot.

A method and apparatus for polishing a substrate is disclosed herein. More specifically, the apparatus relates to an integrated CMP system for polishing substrates. The CMP system has a polishing station configured to polish substrates. A spin rinse dry (SRD) station configured to clean and dry the substrates. A metrology station configured to measure parameters of the substrates. A robot configured to move the substrate in to and out of the SRD station. And an effector rinse and dry (EERD) station configured to clean and dry an end effector of the robot.

Systems and methods of in-situ calibration of semiconductor material layer deposition and Removal processes are disclosed. Sets of test structures including one or more calibration vias or posts are used to precisely monitor processes such as plating and polishing, respectively. Known (e.g., empirically determined) relationships between the test structure features and product feature enable monitoring of wafer processing progress. Optical inspection of the calibration feature(s) during processing cycles permits dynamic operating condition adjustments and precise cessation of processing when desired product feature characteristics have been achieved.

An end-point detection sensor 50 detects an end point of polishing, the end-point detection sensor 50 being arranged in a polishing table 100. The end-point detection sensor 50 has a pot core. The pot core 60 has a bottom portion 61a, a magnetic core base portion 61b and a peripheral wall base portion 61c. The end-point detection sensor 50 has an exciting coil 62, and a detection coil 63. The back surface 101b of the polishing pad 101 has a space 30 which is arranged at a portion facing the polishing table 100 and houses a magnetic core extension portion 8 and a peripheral wall extension portion 11. The magnetic core extension portion 8 and the peripheral wall extension portion 11 extending to the space 30 are located in the space 30.

An end-point detection sensor 50 detects an end point of polishing, the end-point detection sensor 50 being arranged in a polishing table 100. The end-point detection sensor 50 has a pot core. The pot core 60 has a bottom portion 61a, a magnetic core base portion 61b and a peripheral wall base portion 61c. The end-point detection sensor 50 has an exciting coil 62, and a detection coil 63. The back surface 101b of the polishing pad 101 has a space 30 which is arranged at a portion facing the polishing table 100 and houses a magnetic core extension portion 8 and a peripheral wall extension portion 11. The magnetic core extension portion 8 and the peripheral wall extension portion 11 extending to the space 30 are located in the space 30.

One object is to provide a polishing machine and a polishing method capable of improving a processing accuracy on the surface of an object. A method of polishing an object is provided. Such a method comprises: a first step of polishing an object by moving the object and a first polishing pad having a smaller dimension than that of the object relative to each other while the first polishing pad is made to contact the object, a second step of polishing the object, after the first step of polishing, by moving the object and a second polishing pad having a larger dimension than that of the object relative to each other while the second polishing pad is made to contact the object, and a step of detecting the state of the surface of the object before the first step of polishing.

One object is to provide a polishing machine and a polishing method capable of improving a processing accuracy on the surface of an object. A method of polishing an object is provided. Such a method comprises: a first step of polishing an object by moving the object and a first polishing pad having a smaller dimension than that of the object relative to each other while the first polishing pad is made to contact the object, a second step of polishing the object, after the first step of polishing, by moving the object and a second polishing pad having a larger dimension than that of the object relative to each other while the second polishing pad is made to contact the object, and a step of detecting the state of the surface of the object before the first step of polishing.

A control device of a semiconductor manufacturing apparatus includes a processor and a memory connected to the processor and storing instructions executable by the processor. The instructions collect a sound of processing a substrate by the semiconductor manufacturing apparatus. The instructions calculate a difference of a power spectrum of the processing sound between a first point of time and a second point of time. The instructions determine a change point of processing of the substrate based on the difference.

A polishing apparatus includes: a polishing table 12 for holding a polishing pad; a first electric motor 14 that rotationally drives the polishing table 12; a first rotary joint 40 that has a rotating body 41 that is rotationally driven by the first electric motor 14, a housing 42 provided around the rotating body 41, and a seal portion 44 that seals between the rotating body 41 and the housing 42; a second current sensor 31 that detects a current which is correlated with driving load of the first electric motor 14; a friction detecting unit 50 that detects sliding friction in the seal portion 44 of the first rotary joint 40; and an end point detecting apparatus 60 that detects a polishing end point of the polishing target on the basis of the current and the sliding friction.