A polishing method capable of terminating polishing of a substrate, such as a wafer, at a preset polishing time is disclosed. The polishing method includes: polishing a substrate by pressing the substrate against a polishing surface of a polishing pad, while regulating a temperature of the polishing surface by a heat exchanger; calculating a target polishing rate required for an actual polishing time to coincide with a target polishing time, the actual polishing time being a time duration from start of polishing the substrate until a film thickness of the substrate reaches a target thickness; determining a target temperature of the polishing surface that can achieve the target polishing rate; and during polishing of the substrate, changing a temperature of the polishing surface to the target temperature by the heat exchanger.

A polishing method capable of terminating polishing of a substrate, such as a wafer, at a preset polishing time is disclosed. The polishing method includes: polishing a substrate by pressing the substrate against a polishing surface of a polishing pad, while regulating a temperature of the polishing surface by a heat exchanger; calculating a target polishing rate required for an actual polishing time to coincide with a target polishing time, the actual polishing time being a time duration from start of polishing the substrate until a film thickness of the substrate reaches a target thickness; determining a target temperature of the polishing surface that can achieve the target polishing rate; and during polishing of the substrate, changing a temperature of the polishing surface to the target temperature by the heat exchanger.

A system for obtaining a measurement representative of a thickness of a layer on a substrate includes a support to hold a substrate, an optical assembly to capture two color images with light impinging the substrate at different angles of incidence, and a controller. The controller is configured to store a function that provides a value representative of a thickness as a function of position along a predetermined path in a coordinate space of at least four dimensions. For a pixel in the two color images, the controller determines a coordinate in the coordinate space from the color data, determines a position of a point on the predetermined path that is closest to the coordinate, and calculates a value representative of a thickness from the function and the position of the point on the predetermined path.

A system for obtaining a measurement representative of a thickness of a layer on a substrate includes a support to hold a substrate, an optical assembly to capture two color images with light impinging the substrate at different angles of incidence, and a controller. The controller is configured to store a function that provides a value representative of a thickness as a function of position along a predetermined path in a coordinate space of at least four dimensions. For a pixel in the two color images, the controller determines a coordinate in the coordinate space from the color data, determines a position of a point on the predetermined path that is closest to the coordinate, and calculates a value representative of a thickness from the function and the position of the point on the predetermined path.

A polishing apparatus capable of monitoring a distribution of an amount of liquid, such as a polishing liquid or a chemical liquid, on a polishing surface of a polishing pad, and capable of polishing an object, such as a wafer, under appropriate polishing conditions. The polishing apparatus includes: a polishing table configured to support a polishing pad; a polishing head configured to press the object against a polishing surface of the polishing pad; a liquid supply device configured to supply liquid onto the polishing surface; a liquid monitoring device configured to obtain optical information contained in light from a plurality of points on the polishing surface; an optical information analyzer configured to determine a distribution of amount of the liquid on the polishing surface from the optical information; and an operation controller configured to control operations of the polishing apparatus.

A polishing apparatus capable of monitoring a distribution of an amount of liquid, such as a polishing liquid or a chemical liquid, on a polishing surface of a polishing pad, and capable of polishing an object, such as a wafer, under appropriate polishing conditions. The polishing apparatus includes: a polishing table configured to support a polishing pad; a polishing head configured to press the object against a polishing surface of the polishing pad; a liquid supply device configured to supply liquid onto the polishing surface; a liquid monitoring device configured to obtain optical information contained in light from a plurality of points on the polishing surface; an optical information analyzer configured to determine a distribution of amount of the liquid on the polishing surface from the optical information; and an operation controller configured to control operations of the polishing apparatus.

A chemical mechanical polishing apparatus includes a platen to support a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, a motor to generate relative motion between the platen and the carrier head so as to polish an overlying layer on the substrate, an in-situ vibration monitoring system including a light source to emit a light beam and a sensor that receives a reflection of the light beam from a reflective surface of the polishing pad, and a controller configured to detect exposure of an underlying layer due to the polishing of the substrate based on measurements from the sensor of the in-situ pad vibration monitoring system.

A chemical mechanical polishing apparatus includes a platen to support a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, a motor to generate relative motion between the platen and the carrier head so as to polish an overlying layer on the substrate, an in-situ vibration monitoring system including a light source to emit a light beam and a sensor that receives a reflection of the light beam from a reflective surface of the polishing pad, and a controller configured to detect exposure of an underlying layer due to the polishing of the substrate based on measurements from the sensor of the in-situ pad vibration monitoring system.

A chemical mechanical polishing apparatus includes a platen to support a polishing pad, a carrier head to hold a surface of a substrate against the polishing pad, a motor to generate relative motion between the platen and the carrier head so as to polish an overlying layer on the substrate, an in-situ acoustic monitoring system comprising an acoustic window having a top surface to contact the substrate, and a controller configured to detect a polishing endpoint based on received acoustic signals from the in-situ acoustic monitoring system.

A chemical mechanical polishing apparatus includes a platen to support a polishing pad, a carrier head to hold a surface of a substrate against the polishing pad, a motor to generate relative motion between the platen and the carrier head so as to polish an overlying layer on the substrate, an in-situ acoustic monitoring system comprising an acoustic window having a top surface to contact the substrate, and a controller configured to detect a polishing endpoint based on received acoustic signals from the in-situ acoustic monitoring system.